This product complies with the RoHS Directive (EU
2002/95/EC).
Optoisolators (Photocouplers)
CNC1S101
(ON3131)
, CNZ3132
(ON3132)
,
CNZ3133
(ON3133)
, CNZ3134
(ON3134)
CNC1S101
5.2 max.
4.58
±0.3
Unit: mm
0.5 min.
4
3
4-1.2
±0.15
+0.15
Optoisolators
■
Overview
CNC1S101 is a DIL type 4-pin single-channel optoisolator which
is housed in a small package. This optoisolator series also includes
the two channel CNZ3132, the three-channel CNZ3133, and the
four-channel 3134.
The CNC1S101 series has a number of good features, including
high I/O isolation voltage and current transfer ratio (CTR), as well
as high speed response.
LED mark
1
2
7.62
±0.3
6.2
±0.5
3.85
±0.3
2.0
2.54 min.
4-0.5
±0.1
0
1
°
to
5
°
to 1
0
°
1: Anode
2: Cathode
3: Emitter
4: Collector
PCTFR104-001 Package
5
°
CNZ3132
5.2 max.
LED mark
1
0.5 min.
8
7
6
5
Unit: mm
2.54 min.
■
Features
•
High current transfer ratio: CTR
≥
100%
•
High I/O isolation voltage: V
ISO
=
5 000 V[rms] (min.)
•
Fast response: t
r
=
2
µs,
t
f
=
3
µs
(typ.)
•
Collector-emitter cutoff current (Base open): I
CEO
≤
100 nA
•
UL listed (UL File No. E79920)
9.66
±0.3
2
3
4
7.62
±0.3
6.2
±0.5
8-0.5
±0.1
15
°
°
to
8-1.2
±0.15
12-1.2
±0.15
2.54
±0.25
3.85
±0.3
0.25
-0
+0.15
■
Applications
•
Switching power supply
•
Computer terminal equipment
•
System equipment, measuring equipment
•
Telephones, copier, vending machines
•
Televisions, VCRs, and other consumer electronics products
•
Medical equipment and phsical and chemical equipment
•
Signal transmission between circuits with different potentials and
impedances
5
°
to 1
0
°
0
1, 3: Anode
2, 4: Cathode
5, 7: Emitter
6, 8: Collector
PCTFR108-001 Package
Unit: mm
5.2 max.
CNZ3133
LED mark
1
14.74
±0.3
2.0
0.5 min.
12
11
9
8
7
6.2
±0.5
0.25
-0
+0.15
2.54 min.
2
3
4
5
6
7.62
±0.3
■
Pin Connection
3.85
±0.3
CNC1S101
1
2
4
3
CNZ3132
1
2
3
4
8
7
6
5
to
0
°
15
°
1, 3, 5: Anode
2, 4, 6: Cathode
5
°
to 1
7, 9, 11: Emitter
0
°
8, 10, 12: Collector
PCTFR112-001 Package
Unit: mm
5.2 max.
0.5 min.
16
15
13
12
11
10
9
2.54 min.
Top View
Top View
CNZ3134
LED mark
CNZ3133
1
2
3
4
5
6
12
11
10
9
8
7
Top View
CNZ3134
1
2
3
4
5
6
7
8
16
15
14
13
12
2.0
19.82
±0.5
1
2
3
4
5
6
7
8
7.62
±0.3
6.2
±0.5
2.0
11
10
9
Top View
3.85
±0.3
to
0
°
15
°
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHF00002BED
0.25
-0
+0.1
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
5
°
9, 11, 13, 15: Emitter
to 1
0
°
10, 12, 14, 16: Collector
PCTFR116-001 Package
16-1.2
±0.15
14
16-0.5
±0.1
2.54
±0.25
10
12-0.5
±0.1
2.54
±0.25
2.54
±0.25
0.25
-0
1
This product complies with the RoHS Directive (EU
2002/95/EC).
CNC1S101, CNZ3132, CNZ3133, CNZ3134
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Input (Light
Reverse voltage
Pulse forward current
*1
Power dissipation
*2
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Isolation voltage, input to output
*4
Total power dissipation
Operating ambient temperature
Storage temperature
*3
Symbol
V
R
I
F
I
FP
P
D
V
CEO
V
ECO
I
C
P
C
V
ISO
P
T
T
opr
T
stg
Rating
6
50
1
75
80
7
50
150
5 000
200
−30
to
+100
−55
to
+125
Unit
V
mA
A
mW
V
V
mA
mW
V[rms]
mW
°C
°C
Note) *1: Pulse width
≤
100
µs,
repeat 100 pps
*2: Input power derating ratio is
0.75 mW/°C at T
a
≥
25°C
*3: Output power derating ratio is
1.5 mW/°C at T
a
≥
25°C
*4: AC 1 min., RH
<
60%
emitting diode) Forward current
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Input
Forward voltage
Symbol
V
F
I
R
C
t
V
CEO
V
ECO
I
CEO
C
C
CTR
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
I
C
=
100
µA
I
E
=
10
µA
V
CE
=
20 V
V
CE
=
10 V, f
=
1 MHz
V
CE
=
5 V, I
F
=
5 mA
100
80
7
5
10
600
100
15
Conditions
Min
Typ
1.35
Max
1.50
10
Unit
V
µA
pF
V
V
nA
pF
%
characteristics Reverse current
Terminal capacitance
Output
Collector-emitter voltage
characteristics (Base open)
Emitter-collector voltage
(Base open)
Collector-emitter cutoff current
(Base open)
Collector-emitter capacitance
Transfer
DC current
*1
CNZ3132
CNZ3133
CNZ3134
CNC1S101
*4
characteristics transfer ratio
80
C
ISO
R
ISO
t
r
t
f
f
=
1 MHz
V
ISO
=
500 V
V
CC
=
10 V, I
C
=
2 mA
R
L
=
100
Ω
I
F
=
20 mA, I
C
=
1 mA
10
11
2
3
0.1
0.7
600
pF
Ω
µs
µs
0.2
V
Isolation capacitance, input to output
Isolation resistance, input to output
Rise time
Fall time
*2
*3
Collector-emitter saturation voltage V
CE(sat)
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1:
I
C
CTR
=
×
100%
I
F
*2: t
r
; Time required for the collector current to increase from 10% to 90% of its final value
*3: t
f
; Time required for the collector current to decrease from 90% to 10% of its initial value
*4: Rank classification
Rank
CTR (%)
R
100 to 300
S
200 to 600
V
80 to 130
SHF00002BED
No-rank
100 to 600
2
This product complies with the RoHS Directive (EU
2002/95/EC).
CNC1S101, CNZ3132, CNZ3133, CNZ3134
Collector power dissipation P
C
, power dissipation P
D
(mW)
P
C
, P
D
T
a
160
P
C
120
60
I
F
, I
C
T
a
10
2
I
F
, I
C
50
I
C
V
CE
T
a
=
25°C
I
F
=
50 mA
Forward current I
F
, collector current I
C
(mA)
Collector current I
C
(mA)
40
10
20 mA
10 mA
5 mA
80
P
D
30
20
1
2 mA
40
10
0
−30
20
60
100
0
−30
0
20
40
60
80
100
10
−1
0
0.1
0.2
0.3
0.4
0.5
0.6
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
40
I
F
=
50 mA
40 mA
60
I
F
V
F
T
a
=
25°C
160
∆I
C
T
a
V
CC
=
5 V
30 mA
25 mA
20 mA
15 mA
12 mA
10 mA
9 mA 8 mA
7 mA
6 mA
5 mA
Forward current I
F
(mA)
30
Relative collector current
∆I
C
(%)
50
Collector current I
C
(mA)
120
I
F
=
10 mA
5 mA
10 mA
1 mA
5 mA
40
1 mA
80
20
30
20
10
40
0
0
8
16
24
4 mA
3 mA
2 mA
1 mA
40
32
10
0
0
0.9
1.0
1.1
1.2
1.3
1.4
0
−50
0
50
100
Collector-emitter voltage V
CE
(V)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
I
CEO
T
a
Collector-emitter cutoff current (Base open) I
CEO
(µA)
10
V
CE
=
30 V
1
20 V
10 V
10
2
I
C
V
CE(sat)
T
a
=
25°C
10
2
V
CC
=
10 V
T
a
=
25°C
I
C
I
F
Collector current I
C
(mA)
Collector current I
C
(mA)
I
F
=
50 mA
10
20 mA
10 mA
5 mA
10
10
−1
1
10
−2
1
2 mA
10
−1
10
−3
10
−4
−40
0
40
80
10
−1
0
0.1
0.2
0.3
0.4
0.5
0.6
10
−2
10
−1
1
10
10
2
Ambient temperature T
a
(°C)
Collector-emitter saturation voltage V
CE(sat)
(V)
Forward current I
F
(mA)
SHF00002BED
3
This product complies with the RoHS Directive (EU
2002/95/EC).
CNC1S101, CNZ3132, CNZ3133, CNZ3134
V
F
T
a
1.6
10
2
t
r
I
C
V
CC
=
10 V
T
a
=
25°C
10
2
t
f
I
C
V
CC
=
10 V
T
a
=
25°C
R
L
=
1 kΩ
500
Ω
100
Ω
1
I
F
=
50 mA
Forward voltage V
F
(V)
1.2
10
R
L
=
1 kΩ
500
Ω
10
Rise time t
r
(µs)
10 mA
1 mA
0.8
1
100
Ω
Fall time t
f
(µs)
0.4
10
−1
Sig. in
Sig.
out
50
Ω
V
CC
Sig.
out
R
L
90%
10%
10
−1
Sig. in
Sig.
out
50
Ω
V
CC
Sig.
out
R
L
90%
10%
0
−40
0
40
80
10
−2
t
r
10
t
d
t
f
10
2
10
−1
1
10
−2
t
r
10
t
d
t
f
10
2
10
−1
1
Ambient temperature T
a
(°C)
Collector current I
C
(mA)
Collector current I
C
(mA)
Frequency characteristics
10
T
a
=
25°C
Measurement circuit of
frequency characteristics
Relative power output P (dB)
+10
V
1
+10
V
50 kΩ
100
µF
16 V
Sig. in
10
−1
Sig. out
50
Ω
5 kΩ
10
−2
50
Ω
Sig. out
50
Ω
10
−3
I
F
=
5 mA
1
10
10
2
2 mA
10
3
Frequency f (kHz)
4
SHF00002BED
This product complies with the RoHS Directive (EU
2002/95/EC).
Caution for Safety
¢
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
If you have any inquiries or questions about this book or our semiconductor products, please contact one
of our sales offices listed on the back or Semiconductor Company's Department.
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