Product Bulletin OP140A
May 1996
GaAs Plastic Infrared Emitting Diodes
Types OP140A, OP140B, OP140C, OP140D
Features
•
Wide irradiance pattern
•
Selected to specific on-line intensity
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Forward Current (1
µs
pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant incidence upon a sensing area
0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the
lens and 0.653" (16.6 mm) from the lens tip. E
e(APT)
is not necessarily uniform within the
measured area.
ranges
•
Low cost, miniature plastic side-
looking package
•
Mechanically and spectrally matched
to the OP550 series of
phototransistors and the OP560 series
of photodarlingtons
Description
The OP140 series devices are 935nm
high intensity gallium arsenide infrared
emitting diodes molded in IR
transmissive plastic side-looking
packages. The side looking packages
are for use in PC board mounted slotted
switches or as an easy mount PC board
interrupter.
Replaces
OP140SL series
2-10
Types OP140A, OP140B, OP140C, OP140D
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
E
e(APT)
PARAMETER
Apertured Radiant Incidence
OP140D
OP140C
OP140B
OP140A
MIN TYP MAX UNITS
0.10
0.20
0.30
0.40
mW/cm
2
mW/cm
2
0.40
mW/cm
2
0.55
mW/cm
2
1.60
100
935
50
+0.30
40
1000
500
V
µA
nm
nm
nm/
o
C
Deg.
ns
ns
TEST CONDITIONS
I
F
= 20 mA
(3)
I
F
= 20 mA
(3)
I
F
= 20 mA
(3)
I
F
= 20 mA
(3)
I
F
= 20 mA
V
R
= 2.0 V
I
F
= 10 mA
I
F
= 10 mA
I
F
= Constant
I
F
= 20 mA
I
F(PK)
= 100 mA,
PW = 10
µs,
D.C. = 10%
V
F
I
R
λ
p
B
∆λ
/∆
T
P
θ
HP
t
r
t
f
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Spectral Bandwidth Between Half Power Points
Spectral Shift with Temperature
Emission Angle at Half Power Points
Output Rise Time
Output Fall Time
2-11
