Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
Features:
•
•
•
•
Flat lens for wide radiation angle (OP168, OP268)
Integral lens for narrow beam angle (OP169, OP269)
Easily stackable on 0.100” (2.54 mm) hole centers
Mechanically and spectrally matched to other OPTEK devices
OP168
OP268
OP169
OP269
Description:
Each diode in this series is molded into an end-looking plastic package. The package for all
OP168F
and
OP268F
devices is black, whereas the package for all
OP169
and
OP269
packages is clear.
OP168F
and
OP169
devices
are GaAs.
OP268F
and
OP269
devices are GaAIAs.
The
OP268FPS
is an 850nm gallium aluminum arsenide infrared emitting diode molded in a end-looking miniature
plastic package. The advantage of this emitter is that it emits photons from a 0.004” area that is aligned with the
package optical centerline. Unlike other GaAlAs emitters, this device performs more like an ideal point source and
is suitable for use with lenses to create collimated light sources that can be used in a variety of applications.
Due to their small size, all diodes in this series offer considerable design flexibility.
The OP168F and OP268F series are mechanically and spectrally matched to the OP508F series phototransistor
and the OP538F series photodarlingtons. The OP169 and OP269 series are mechanically and spectrally
matched to the OP509 series phototransistors.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
For custom screening contact your OPTEK representative.
Ordering Information
Part
Number
OP168FA
OP168FB
OP168FC
OP169A
OP169B
OP169C
OP268FA
OP268FB
OP268FC
OP268FPS
OP269A
OP269B
OP269C
890 nm
18”
850 nm
50°
890 nm
104°
935 nm
18°
0.50"
935 nm
104°
LED Peak
Wavelength
Total Beam
Angle
Lead
Length
Applications:
•
•
•
•
Space-limited applications
Excellent design flexibility
PCBoard mounted slotted switch
PCBoard interrupter
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B
01/2012
Page 1 of 6
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
OP168F (A, B, C), OP268F (A, B, C, PS)
1
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
2
Pin #
1
2
LED
X=0.060” (1.5 mm)
Anode
Cathode
OP169 (A, B, C), OP269 (A, B, C)
1
2
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
Pin #
1
2
LED
X=0.060” (1.5 mm)
Anode
Cathode
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B
01/2012
Page 2 of 6
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1
μs
pulse width, 300 pps)
OP168, OP169, OP268, OP269 (A, B, C)
OP268FPS
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
(1)
Power Dissipation
(2)
-40
o
C to +100
o
C
2.0 V
50 mA
3.0 A
100 mA
260° C
100 mW
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
SYMBOL
Input Diode
Apertured Radiant Incidence
OP168FA
OP168FB
OP168FC
OP169A
OP169B
OP169C
OP268FA
OP268FB
OP268FC
OP268FPS
OP269A
OP269B
OP269C
V
F
Forward Voltage
OP168, OP169
OP268, OP269
OP268FPS
Reverse Current
OP168, OP169, OP268, OP269
OP268FPS
Wavelength at Peak Emission
OP168, OP169
OP268, OP269
OP268FPS
0.48
0.43
0.27
0.18
0.11
0.03
0.64
0.45
0.36
0.10
0.58
0.42
0.34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
935
890
850
-
0.73
-
-
0.22
-
mW/cm
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
E
E (APT)(3)
2
-
0.99
-
0.90
-
0.82
-
1.40
1.50
1.80
100
20
-
-
-
V
I
F
= 20 mA
Aperture = .081” dia.
Distance = .400” from tip of lens to
aperture surface
I
F
= 20 mA
I
R
µA
V
R
= 2.0 V
λ
P
nm
I
F
= 20 mA
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), E
E(APT)
is a measurement of the average apertured radiant energy incident upon a
sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm)
from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), E
E(APT)
is a measurement of the average apertured radiant
energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens
and 0.653” (16.6 mm) from the lens tip. NOTE: E
E(APT)
is a measurement of the
average
radiant intensity within the cone formed by
the above conditions. E
E(APT)
is not necessarily uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
01/2012
Page 3 of 6
Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
Electrical Characteristics
(T
A
= 25°C unless otherwise noted — for reference only)
SYMBOL
Input Diode
B
Spectral Bandwidth between Half Power
Points
OP168, OP169, OP268FPS
OP268, OP269
Spectral Shift with Temperature
OP168, OP169,
OP268, OP269
Emission Angle at Half Power Points
OP168
OP169
OP268
OP268FPS
OP269
Rise Time
OP168, OP169
OP268, OP269
OP268FPS
Fall Time
OP168, OP169
OP268, OP269
OP268FPS
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
80
±0.30
±0.18
104°
46°
104°
50°
46°
1000
500
10
500
250
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nm
I
F
= 10 mA
∆λ
P
/∆T
nm/°C
I
F
= Constant
θ
HP
Degree I
F
= 20 mA
t
r
ns
I
F(PK)
=100 mA, PW=10 µs, D.C.=10%
t
f
ns
I
F(PK)
=100 mA, PW=10 µs, D.C.=10%
Beam Angle OP168 & OP268 Package
Beam Angle OP268FA - OP268FC
1.1
1.0
0.9
Beam Angle OP169 & OP269 Package
Beam Angle
110%
100%
90%
0.8
80%
Normalized Radiance
0.7
70%
60%
50%
40%
30%
20%
10%
0%
Amplitude
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-80
-60
-40
-20
0
20
40
60
80
-80 -70 -60 -50 -40 -30 -20 -10 0
10 20 30 40 50 60 70 80
Angle (Degrees)
Degrees
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B
01/2012
Page 4 of 6
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
OP168 (FA, FB, FC), OP169 (A, B, C)
Forward Voltage vs Forward Current vs
Temperature
1.8
1.7
1.6
Typical Forward Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
5
10
15
20
25
30
35
40
45
Forward Current (mA)
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Optical Power vs I
F
vs Temp
4.0
Normalized at 20 mA and 20
o
C
3.5
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
3.0
Normalized Optical Power
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
35
40
45
50
Forward Current I
F
(mA)
Distance vs Output Power vs Forward Current
9
Normalized at 0.6" and 50 mA
8
Forward Current
7
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
Normalized Output Power
6
5
4
3
2
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Distance (inches)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
01/2012
Page 5 of 6
