Enhanced Product
FEATURES
Single-supply operation
Wide bandwidth: 4.25 MHz
Low offset voltage: 100 μV
Unity-gain stable
High slew rate: 4.0 V/μs
Low noise: 3.9 nV/√Hz
Precision RRI0 Dual Operational Amplifier
OP284-EP
PIN CONNECTION DIAGRAM
OUT A
1
–IN A
2
+IN A
3
V–
4
8
7
6
V+
OUT B
–IN B
5
+IN B
12562-001
OP284-EP
TOP VIEW
(Not to Scale)
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Enhanced product change notification
Qualification data available on request
Figure 1.
APPLICATIONS
Battery-powered instrumentation
Power supply control and protection
Telecommunications
DAC output amplifier
ADC input buffer
GENERAL DESCRIPTION
The
OP284-EP
is a dual, single-supply, 4.25 MHz bandwidth
amplifier featuring rail-to-rail inputs and outputs (RRIO).
The
OP284-EP
is guaranteed to operate from 5 V to 36 V (or
±2.5 V to ±18 V).
This amplifier is superb for single-supply applications requiring
both ac and precision dc performance. The combination of
wide bandwidth, low noise, and precision makes the
OP284-EP
useful in a wide variety of applications, including filters and
instrumentation.
Other applications for this amplifier include portable telecom-
munications equipment, power supply control and protection,
and use as an amplifier or buffer for transducers with wide
output ranges. Sensors requiring a rail-to-rail input amplifier
include Hall effect, piezoelectric, and resistive transducers.
The ability to swing rail to rail at both the input and output
enables designers to build multistage filters in single-supply
systems and to maintain high signal-to-noise ratios.
The
OP284-EP
is specified over the extended industrial
temperature range of −55°C to +125°C. The
OP284-EP
is
available in a SOIC surface-mount package.
Rev. 0
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OP284-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics ............................................................. 3
Enhanced Product
Absolute Maximum Ratings ............................................................5
Thermal Resistance .......................................................................5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
5/15—Revision 0: Initial Version
Rev. 0 | Page 2 of 13
Enhanced Product
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
POWER SUPPLY
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
V
OS
−55°C ≤ T
A
≤ +125°C
I
B
–55°C ≤ T
A
≤ +125°C
I
OS
–55°C ≤ T
A
≤ +125°C
CMRR
A
VO
ΔV
OS
/ΔT
ΔI
B
/ΔT
V
OH
V
OL
I
OUT
I
SY
SR
t
S
GBP
Φ
M
e
n
p-p
e
n
i
n
I
L
= 1.0 mA
I
L
= 1.0 mA
4.80
V
CM
= 1.0 V to 4.0 V, −55°C ≤ T
A
≤ +125°C
R
L
= 2 kΩ, 1 V ≤ V
OUT
≤ 4 V
R
L
= 2 kΩ, −55°C ≤ T
A
≤ +125°C
0
86
50
25
60
Test Conditions/Comments
Min
Typ
OP284-EP
Max
125
250
450
600
50
5
Unit
μV
μV
nA
nA
nA
V
dB
V/mV
V/mV
µV/°C
pA/°C
V
mV
mA
mA
V/µs
µs
MHz
Degrees
μV p-p
nV/√Hz
pA/√Hz
240
0.2
150
2.00
125
±6.5
V
OUT
= 2.5 V, −55°C ≤ T
A
≤ +125°C
R
L
= 2 kΩ
To 0.01%, 1.0 V step
1.65
2.4
2.5
3.25
45
0.3
3.9
0.4
1.45
0.1 Hz to 10 Hz
f = 1 kHz
Rev. 0 | Page 3 of 13
OP284-EP
V
S
= ±15.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Full Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
Symbol
V
OS
−55°C ≤ T
A
≤ +125°C
I
B
I
OS
CMRR
A
VO
ΔV
OS
/ΔT
ΔV
B
/ΔT
V
OH
V
OL
I
OUT
PSRR
I
SY
I
L
= 1.0 mA
I
L
= 1.0 mA
14.8
−55°C ≤ T
A
≤ +125°C
−55°C ≤ T
A
≤ +125°C
V
CM
= −14.0 V to +14.0 V, −55°C ≤ T
A
≤ +125°C
R
L
= 2 kΩ, −10 V ≤ V
OUT
≤ 10 V
R
L
= 2 kΩ, −55°C ≤ TA ≤ +125°C
−15
86
150
75
Test Conditions/Comments
Min
Enhanced Product
Typ
Max
100
200
450
600
50
+15
Unit
μV
μV
nA
nA
nA
V
dB
V/mV
V/mV
µV/°C
pA/°C
V
V
mA
dB
mA
mA
V/µs
kHz
µs
MHz
Degrees
µV p-p
nV/√Hz
pA/√Hz
80
90
1000
0.2
150
2.00
−14.875
±10
V
S
= ±2.0 V to ±18 V, −55°C ≤ T
A
≤ +125°C
V
OUT
= 0 V, −55°C ≤ T
A
≤ +125°C
V
S
= ±18 V, −55°C ≤ T
A
≤ +125°C
R
L
= 2 kΩ
1% distortion, R
L
= 2 kΩ, V
OUT
= 29 V p-p
To 0.01%, 10 V step
90
2.0
2.25
2.4
4.0
35
4
4.25
50
0.3
3.9
0.4
SR
BW
p
t
S
GBP
Φ
M
e
n
p-p
e
n
i
n
0.1 Hz to 10 Hz
f = 1 kHz
Rev. 0 | Page 4 of 13
Enhanced Product
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
1
Output Short-Circuit Duration to GND
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature (Soldering 60 sec)
1
OP284-EP
Rating
±18 V
±18 V
±0.6 V
Indefinite
−65°C to +150°C
−55°C to +125°C
−65°C to +150°C
300°C
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions; that is, θ
JA
is
specified for a device soldered in the circuit board for the SOIC
package.
Table 4. Thermal Resistance
Package Type
8-Lead SOIC
θ
JA
158
θ
JC
43
Unit
°C/W
For input voltages greater than 0.6 V, the input current must be limited to
less than 5 mA to prevent degradation or destruction of the input devices.
ESD CAUTION
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 5 of 13
