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OP470-000C

Precision Amplifiers Very Low-Noise Quad Op Amp

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

器件标准:

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器件参数
参数名称
属性值
Brand Name
Analog Devices Inc
是否无铅
含铅
是否Rohs认证
符合
厂商名称
ADI(亚德诺半导体)
零件包装代码
DIE
包装说明
DIE, DIE OR CHIP
针数
0
Reach Compliance Code
compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.025 µA
25C 时的最大偏置电流 (IIB)
0.025 µA
标称共模抑制比
110 dB
频率补偿
YES
最大输入失调电压
400 µV
JESD-30 代码
R-XUUC-N14
低-失调
YES
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
4
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
UNSPECIFIED
封装代码
DIE
封装等效代码
DIE OR CHIP
封装形状
RECTANGULAR
封装形式
UNCASED CHIP
电源
+-15 V
认证状态
Not Qualified
筛选级别
38535V;38534K;883S
最小摆率
1.4 V/us
最大压摆率
11 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
MILITARY
端子形式
NO LEAD
端子位置
UPPER
最小电压增益
400000
文档预览
OP470
Very low noise, quad, operational amplifier
3.0
Absolute Maximum Ratings
1/
Supply Voltage (V
CC
) .........................................................
Differential Input Voltage 2/...............................................
Differential Input Current 2/ ...............................................
Input Voltage ......................................................................
Output Short Circuit Duration ............................................
Storage Temperature Range................................................
Lead Temperature (soldering, 60 seconds).........................
Power Dissipation (P
D
) .......................................................
Maximum Junction Temperature (T
J
).................................
Ambient Operating Temperature Range.............................
Absolute Maximum Ratings Notes:
1/
Stresses above the absolute maximum rating may cause permanent damage to
the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
The inputs are protected by back-to-back diodes. Current limiting resistors are
not used in order to achieve low noise performance. If the differential input
voltage exceeds ±1V, the input current should be limited to ±25mA.
±18V dc
±1V dc
±25mA
Supply voltage
Continuous
-65°C to +150°C
+300°C
500mW
+150°C
-55°C to +125°C
2/
3.1
Thermal Characteristics:
Thermal Resistance, Lead Leadless Chip Carrier (TC) Package
Junction-to-Case (Θ
JC
) = See MIL-STD-1835
Junction-to-Ambient (Θ
JA
) = 110 °C/W Max
4.0
Electrical Table:
Table I - Electrical Characteristics
Parameter
Input Offset Voltage
Symbol
V
IO
M, D, L, R
Input Offset Current
I
IO
V
CM
= 0V
M, D, L, R
Input Bias Current
Input Noise Voltage 4/
I
IB
E
n
V
CM
= 0V
M, D, L, R
fo = 1Hz to 100Hz
V
O
= ±10V, R
L
= 10kΩ
Large Signal Voltage Gain
A
VS
M, D, L, R
V
O
= ±10V, R
L
= 2kΩ 4/
Conditions
1/
Sub-
groups
1
2, 3
1
1
2, 3
1
1
2, 3
1
7
4
5, 6
4
4
5, 6
Limit
Min
Limit
Max
±0.4
±0.6
±0.6
±10
±20
±50
±25
±50
±500
110
Units
mV
nA
nV
RMS
1000
750
100
500
400
V/mV
ASD0013059 Rev. B
25-Sep-07
Page 2 of 5
OP470
Very low noise, quad, operational amplifier
Table I - Electrical Characteristics (continued)
Conditions
Sub-
1/
groups
Output Voltage Swing 4/
V
OP
R
L
= 2Kohm
4, 5, 6,
No Load
1, 2, 3
Supply Current 2/
I
SY
M, D, L, R
1
Input Voltage Range 4/
IVR
1, 2, 3
Slew Rate 4/
SR
7
A
VLC
= +21, R
L
= 10kΩ
1
Common Mode Rejection 4/ CMR
V
CM
= IVR 3/
2, 3
1
Power Supply Rejection
PSRR
V
S
= ±4.5V to ±18V
Ratio 4/
2, 3
Parameter
Symbol
Table I Notes:
1/ V
S
= ±15V, R
S
= 50Ω, unless otherwise specified.
2/ I
SY
limit equals the total of all four amplifiers.
3/ IVR is defined as the V
CM
range used for the CMR test.
4/ Not tested Post Irradiation.
4.1
Electrical Test Requirements:
Limit
Min
±12
Limit
Max
11
11
±11
1.4
110
100
1.8
5.6
Units
V
mA
V
V/μV
dB
μV/V
Table II
Test Requirements
Interim Electrical Parameters
Final Electrical Parameters
Group A Test Requirements
Group C end-point electrical parameters
Group D end-point electrical parameters
Group E end-point electrical parameters
Subgroups (in accordance with
MIL-PRF-38535, Table III)
1
1, 2, 3, 4, 5, 6 1/ 2/
1, 2, 3, 4, 5, 6, 7
1, 2, 3 2/
1
1
1/ PDA applies to Subgroup 1 only. Delta's excluded from PDA.
2/ See Table III for delta parameters. See table I for conditions.
4.2
Life Test and Burn-In Delta Limits:
Table III
TEST
TITLE
V
IO
I
IB
I
IO
ASD0013059 Rev. B
BURN-IN
ENDPOINT
±0.4
±25
±10
LIFETEST
ENDPOINT
±0.5
±30
±15
25-Sep-07
DELTA
LIMIT
±0.1
±5
±5
UNITS
mV
nA
nA
Page 3 of 5
OP470
Very low noise, quad, operational amplifier
5.0
Life Test/Burn-In Information
5.1
5.2
5.3
HTRB is not applicable for this drawing.
Burn-in is per MIL-STD-883 Method 1015 test condition B.
Steady state life test is per MIL-STD-883 Method 1005.
ASD0013059 Rev. B
25-Sep-07
Page 4 of 5
OP470
Very low noise, quad, operational amplifier
Rev
A
B
Description of Change
Initiate
Update web address. Remove BI circuit.
Date
Dec. 10, 2002
May 29, 2003
ASD0013059 Rev. B
25-Sep-07
Page 5 of 5
查看更多>
参数对比
与OP470-000C相近的元器件有:OP470R000C、5962R8856501V2A。描述及对比如下:
型号 OP470-000C OP470R000C 5962R8856501V2A
描述 Precision Amplifiers Very Low-Noise Quad Op Amp Precision Amplifiers Very Low-Noise Quad Op Amp Precision Amplifiers OP470ARCQMLR IC
Brand Name Analog Devices Inc Analog Devices Inc Analog Devices Inc
是否无铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 不符合
零件包装代码 DIE DIE QLCC
包装说明 DIE, DIE OR CHIP DIE, DIE OR CHIP QCCN, LCC20,.35SQ
Reach Compliance Code compliant compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.025 µA 0.025 µA 0.5 µA
25C 时的最大偏置电流 (IIB) 0.025 µA 0.025 µA 0.5 µA
标称共模抑制比 110 dB 110 dB 110 dB
频率补偿 YES YES YES
最大输入失调电压 400 µV 400 µV 600 µV
JESD-30 代码 R-XUUC-N14 R-XUUC-N14 S-CQCC-N20
低-失调 YES YES YES
负供电电压上限 -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V
功能数量 4 4 4
端子数量 14 14 20
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装主体材料 UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
封装代码 DIE DIE QCCN
封装等效代码 DIE OR CHIP DIE OR CHIP LCC20,.35SQ
封装形状 RECTANGULAR RECTANGULAR SQUARE
封装形式 UNCASED CHIP UNCASED CHIP CHIP CARRIER
电源 +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Qualified
筛选级别 38535V;38534K;883S 38535V;38534K;883S MIL-PRF-38535 Class V
最小摆率 1.4 V/us 1.4 V/us 1.4 V/us
最大压摆率 11 mA 11 mA 11 mA
供电电压上限 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V
表面贴装 YES YES YES
技术 BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY
端子形式 NO LEAD NO LEAD NO LEAD
端子位置 UPPER UPPER QUAD
最小电压增益 400000 400000 100000
厂商名称 ADI(亚德诺半导体) ADI(亚德诺半导体) -
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