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OP505A

Phototransistors PHOTOSENSOR

器件类别:光电子/LED   

厂商名称:TT Electronics

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
TT Electronics
产品种类
Product Category
Phototransistors
RoHS
Details
产品
Product
Phototransistors
封装 / 箱体
Package / Case
T-1-2
安装风格
Mounting Style
Through Hole
Peak Wavelength
935 nm
Collector- Emitter Voltage VCEO Max
30 V
Dark Current
100 nA
Pd-功率耗散
Pd - Power Dissipation
100 mW
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 100 C
高度
Height
5.08 mm
Lens Color/Style
Blue
系列
Packaging
Bulk
类型
Type
NPN Silicon Phototransistor
Wavelength
935 nm
Collector-Emitter Breakdown Voltage
30 V
Collector-Emitter Saturation Voltage
0.4 V
工厂包装数量
Factory Pack Quantity
500
文档预览
OP505, OP505W, OP506, OP506W
OP535, OP705
OP505, OP535, OP705
Features:
T-1 package style
Variety of sensitivity ranges
Choice of narrow or wide receiving angle
Small package size ideal for space-limited applications
0.050” [1.27mm] or 0.100” [2.54mm] Lead spacing
OP506
OP505W
OP506W
Description:
Each OP505 and OP506 devices consist of an NPN silicon phototransistor, the OP535 device consist of an NPN silicon
photodarlington transistor and the OP705 device consist of an NPN silicon phototransistor with a large value resistor
integrated between the Base and Emitter for low light signal rejection. All of the devices are molded in a blue-tinted T-1
(3mm) epoxy package
The OP505, OP535 and OP705 devices have a narrow receiving angle that provides excellent on-axis coupling while the
OP506 device has a wider receiving angle for those applications where a narrow receiving angle of the OP505, OP535 and
OP705 is not required. The OP505W and OP506W device have the widest receiving angle and provides relatively even
reception over a large area.
Devices are 100% production tested, using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Please see your OPTEK representative for custom versions of these devices.
Applications:
Space-limited applications
Interruptive applications to detect media which is semi-
transparent to infrared light
Part
Number
OP505A
OP505B
OP505C
OP505D
OP505W
OP506A
OP506B
OP506C
OP506W
OP535A
OP535B
OP705A
Ordering Information
Sensor
Viewing
Angle
Lead
Spacing
Lead
Length
20°
0.050”
[1.27 mm]
Transistor
90°
20°
90°
0.100”
[2.54 mm]
0.50"
[12.7 mm]
Darlington
R
BE
Transistor
20°
0.050”
[1.27 mm]
RoHS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 1
OP505, OP505W, OP506, OP506W
OP535, OP705
OP505, OP535, OP705
Pin #
1
2
Transistor
Emitter
Collector
OP505, OP506
OP505W, OP506W
2
OP505W
1
OP705
2
OP506
1
OP535
2
1
OP506W
CONTAINS POLYSULFONE
Methanol and isopropanol alcohols
are recommended cleaning agents.
Housings are soluble in chlorinated hydrocarbons and keytones.
Highly activated or water soluble fluxes may damage body.
Testing reagents before use is recommended prior to use.
TOLERANCES ARE ± .010” [.25] UNLESS OTHERWISE STATED
DIMENSIONS ARE IN INCHES [MILLIMETERS]
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 2
OP505, OP505W, OP506, OP506W
OP535, OP705
Electrical Specifications
Absolute Maximum Ratings
( T
A
= 25° C unless otherwise noted)
Storage & Operating Temperature Range
Collector-Emitter Voltage (OP505, OP506, OP505W, OP506W, OP705)
Collector-Emitter Voltage (OP535)
Emitter-Collector Voltage (OP505 and OP506 series only)
Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 seconds with soldering iron)
Power Dissipation
Emitter Reverse Current (OP705 series only)
Collector DC Current (OP705 series only)
-40°C to +100° C
30 V
15 V
5.0 V
260° C
100 mW
(2)
10 mA
30 mA
Electrical Characteristics
( T
A
= 25° C unless otherwise noted )
OP505, OP506, OP505W, OP506W, OP705
SYMBOL
PARAMETER
On-State Collector Current
OP505A, OP506A
OP505B, OP506B
OP505C, OP506C
OP505D
OP705A
OP505W, OP506W
Collector-Emitter Saturation Voltage
OP505, OP506, OP705
OP505W, OP506W
I
CEO
V
(BR)CEO
V
(BR)ECO
∆I
C
/∆T
E
KP
Collector-Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
OP505, OP506
OP705
Relative I
C
Changes with Temperature
Knee Point Irradiance (OP705)
4.30
2.15
1.10
0.55
3.95
0.10
-
-
-
30
5
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.00
0.02
-
5.95
3.00
-
12.00
-
0.40
0.40
100
-
-
-
-
-
mA
V
CE
= 5 V, E
e
= 0.50 mW/cm
2
, Note 3
MIN
TYP
MAX
UNITS
TEST CONDITIONS
I
C(ON)
mA
mA
V
V
nA
V
V
V
% / °C
V
CE
= 5 V, E
e
= 0.50 mW/cm
2
, Note 3
V
CE
= 5 V, E
e
= 0.75 mW/cm
2
, Note 3
I
C
= 250 μA, E
E
= 0.5 mW/cm
2
, Note 3
I
C
= 50 μA, E
E
= 0.75 mW/cm
2
, Note 3
V
CE
= 10 V, E
E
= 0
I
C
= 100 μA, E
E
= 0
I
E
= 100 μA, E
E
= 0
I
E
= 100 μA, E
E
= 0
V
CE
= 5 V, E
E
= 1.0 mW/cm
2
V
CE(SAT)
mW/cm
2
V
CE
= 5 V, Note 4
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied
to the leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level, which varies less than 10% over
the entire lens surface of the phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase Ic(on) to 50 μA.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 3
OP505, OP505W, OP506, OP506W
OP535, OP705
Electrical Specifications
Electrical Characteristics
( T
A
= 25° C unless otherwise noted )
OP535
SYMBOL
I
C(ON)
V
CE(SAT)
I
CEO
V
(BR)CEO
V
(BR)ECO
Collector-Emitter Saturation Voltage
Collector-Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
PARAMETER
On-State Collector Current
OP535A
OP535B
10.5
3.5
-
-
15.0
5.0
-
-
-
-
-
-
-
32.0
1.10
100
-
-
mA
V
nA
V
V
V
CE
= 5 V, E
E
= 0.13 mW/cm
2
, Note 3
I
C
= 400 μA, E
E
= 0.13 mW/cm
2
, Note 3
V
CE
= 10 V, E
E
= 0
I
C
= 1.0 mA, E
E
= 0
I
E
= 100 μA, E
E
= 0
MIN
TYP
MAX
UNITS
TEST CONDITIONS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 4
OP505, OP505W, OP506, OP506W
OP535, OP705
Performance
OP505A, OP505B, OP505C, OP505D
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
08/2016
Page 5
查看更多>
参数对比
与OP505A相近的元器件有:OP505B。描述及对比如下:
型号 OP505A OP505B
描述 Phototransistors PHOTOSENSOR Phototransistors Narrow Rcvng Angle 935nm
Product Attribute Attribute Value Attribute Value
制造商
Manufacturer
TT Electronics TT Electronics
产品种类
Product Category
Phototransistors Phototransistors
RoHS Details Details
产品
Product
Phototransistors Phototransistors
封装 / 箱体
Package / Case
T-1-2 T-1-2
安装风格
Mounting Style
Through Hole Through Hole
Peak Wavelength 935 nm 935 nm
Collector- Emitter Voltage VCEO Max 30 V 30 V
Dark Current 100 nA 100 nA
Pd-功率耗散
Pd - Power Dissipation
100 mW 100 mW
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 100 C + 100 C
高度
Height
5.08 mm 5.08 mm
Lens Color/Style Blue Blue
系列
Packaging
Bulk Bulk
类型
Type
NPN Silicon Phototransistor NPN Silicon Phototransistor
Wavelength 935 nm 935 nm
Collector-Emitter Breakdown Voltage 30 V 30 V
Collector-Emitter Saturation Voltage 0.4 V 0.4 V
工厂包装数量
Factory Pack Quantity
500 500
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