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OPA655U

OP-AMP, 2000 uV OFFSET-MAX, 240 MHz BAND WIDTH, PDSO8
运算放大器, 2000 uV 最大补偿, 240 MHz 波段 宽度, PDSO8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Burr-Brown

厂商官网:http://www.burr-brown.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Burr-Brown
Reach Compliance Code
unknow
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.008 µA
25C 时的最大偏置电流 (IIB)
0.00005 µA
最小共模抑制比
60 dB
标称共模抑制比
70 dB
频率补偿
YES
最大输入失调电压
2000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
低-偏置
YES
低-失调
NO
标称负供电电压 (Vsup)
-5 V
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
+-5 V
认证状态
Not Qualified
最小摆率
250 V/us
标称压摆率
300 V/us
最大压摆率
31 mA
供电电压上限
5.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
标称均一增益带宽
240000 kHz
最小电压增益
316.2
宽带
YES
文档预览
®
OPA
655
OPA655
OPA
655
Wideband, Unity Gain Stable, FET-Input
OPERATIONAL AMPLIFIER
FEATURES
q
400MHz UNITY GAIN BANDWIDTH
q
LOW INPUT BIAS CURRENT: 5pA
q
HIGH INPUT IMPEDANCE: 10
12
|| 1.0pF
q
ULTRA-LOW dG/dP: 0.006%/0.009
°
q
LOW DISTORTION: 90dB SFDR at 5MHz
q
FAST SETTLING: 17ns (0.01%)
q
HIGH OUTPUT CURRENT: 60mA
q
FAST OVERDRIVE RECOVERY
DESCRIPTION
The OPA655 combines a very wideband, unity gain
stable, voltage feedback op amp with a FET input
stage to offer an ultra high dynamic range amplifier
for ADC buffering and transimpedance applications.
Extremely low harmonic distortion along with excel-
lent pulse settling characteristics will support even the
most demanding ADC input buffer requirements.
The broad unity gain stable bandwidth and FET input
allows exceptional performance in high speed, low
noise integrators.
The high input impedance and low bias current pro-
vided by the FET input is further supported by the
ultra-low 6nV/√Hz input voltage noise to achieve a
very low integrated noise in wideband photodiode
transimpedance applications.
Broad transimpedance bandwidths are achievable given
the OPA655’s high 240MHz gain bandwidth product.
As shown below, a –3dB bandwidth of 1MHz is
provided even for a high 1MΩ transimpedance gain
from a 47pF source capacitance.
APPLICATIONS
q
WIDEBAND PHOTODIODE
AMPLIFIER
q
PEAK DETECTOR
q
CCD OUTPUT BUFFER
q
ADC INPUT BUFFER
q
HIGH SPEED INTEGRATOR
q
TEST AND MEASUREMENT FRONT END
1pF
1MΩ TRANSIMPEDANCE BANDWIDTH
130
499kΩ
499kΩ
Transimpedance Gain (dB)
1MHz Bandwidth
120
110
λ
(47pF)
OPA655
100Ω
V
O
100
90
–V
b
80
10kHz
100kHz
Frequency
1MHz
5MHz
Wideband Photodiode Transimpedance Amplifier
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
© 1994 Burr-Brown Corporation
PDS-1271D
Printed in U.S.A. May, 1997
SPECIFICATIONS
At T
A
= +25°C, V
S
=
±5V,
R
FB
= 100Ω, and R
L
= 100Ω, unless otherwise noted. R
FB
= 0 for G = +1.
OPA655P, U
PARAMETER
FREQUENCY RESPONSE
Closed-Loop Response
CONDITIONS
Gain = +1V/V, V
O
= 200mVp-p
Gain = +2V/V, V
O
= 200mVp-p
Gain = +5V/V, V
O
= 200mVp-p
Gain = +10V/V, V
O
= 200mVp-p
G = +1, 1V Step
0.2V Step
0.2V Step
G = +1, 1V Step
G = +1, 1V Step
G = +1, 1V Step
G = +1, f = 5MHz
V
O
=
±1V,
R
L
= 100Ω
3.58MHz, 0 to 1.4V, R
L
= 150Ω
3.58MHz, 0 to 1.4V, R
L
= 150Ω
G = +2, 2Vp-p
210
200
MIN
TYP
400
185
57
24
240
290
1
1
17
8
6
90
0.006
0.009
30
±1
±10
70
65
–5
±2
±2
MAX
UNITS
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
ns
ns
ns
ns
ns
dBc
%
degrees
MHz
mV
µV/°C
dB
dB
pA
nA
pA
nA
Gain-Bandwidth Product
Slew Rate
Over Temperature
Rise Time
Fall Time
Settling Time: 0.01%
0.1%
1%
Spurious-Free Dynamic Range
Differential Gain
Differential Phase
Bandwidth for 0.1dB flatness
OFFSET VOLTAGE
Input Offset Voltage
Over Temperature
Power Supply Rejection (+V
S
)
(–V
S
)
INPUT BIAS CURRENT
(1)
Input Bias Current
Over Temperature
Input Offset Current
Over Temperature
NOISE
Input Voltage Noise
Noise Density: f = 100Hz
f = 1kHz
f = 10kHz
f = 0.1MHz to 100MHz
Integrated Voltage Noise,
BW = 1MHz to 100MHz
Input Bias Current Noise
Current Noise Density,
f = 10Hz to 10kHz
INPUT VOLTAGE RANGE
Common-Mode Input Range
Over Temperature
Common-Mode Rejection
INPUT IMPEDANCE
Differential
Common-Mode
OPEN-LOOP GAIN
Open-Loop Voltage Gain
Over Temperature
OUTPUT
Voltage Output
Over Temperature
Current Output
Over Temperature
Short-Circuit Output Current
Output Resistance
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Quiescent Current
Over Temperature
TEMPERATURE RANGE
Specification: P, U
Thermal Resistance,
θ
JA
P
U
75
|V
S
| = 4.50V to 5.50V
55
50
V
CM
V
CM
V
CM
V
CM
=
=
=
=
0V
0V
0V
0V
–125
–8.0
±125
±8
20
8
6
6
60
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
µVrms
1.3
±2.75
70
10
12
|| 1.2
10
12
|| 1.0
V
O
=
±2V,
R
L
= 100Ω
V
O
=
±2V,
R
L
= 100Ω
R
L
= 100Ω, G = +1
53
50
±3.0
±2.8
±35
±28
58
4
fA/√Hz
V
V
dB
|| pF
|| pF
dB
dB
V
V
mA
mA
mA
V
V
mA
mA
°C
°C/W
°C/W
V
CM
=
±0.5V
±2.5
55
±3.4
±60
±140
0.04
±5
±25
0.1MHz, G = +1
T
MIN
to T
MAX
T
MIN
to T
MAX
±4.75
±21
±5.25
±29
±31
+85
–40
100
125
NOTE: (1) Junction temperature
+25°C for room temperature tested input bias and offset current.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
OPA655
2
ABSOLUTE MAXIMUM RATINGS
Total Supply Voltage Across Device (V
S (TOTAL)
) ................................ 11V
Internal Power Dissipation ........................... See Thermal Considerations
Differential Input Voltage ............................................................ V
S (TOTAL)
Common-Mode Input Voltage Range ..................................................
±V
S
Storage Temperature Range: P, U ............................... –40°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
(soldering, SO-8, 3s) ...................................... +260°C
Junction Temperature (T
J
) ............................................................ +175°C
PACKAGE INFORMATION
PRODUCT
OPA655P
OPA655U
PACKAGE
8-Pin Plastic DIP
SO-8
PACKAGE DRAWING
NUMBER
(1)
006
182
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING INFORMATION
PIN CONFIGURATION
Top View
DIP/SO-8
PRODUCT
OPA655P
OPA655U
PACKAGE
8-Pin Plastic DIP
SO-8
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
NC
Inverting Input
Non-Inverting Input
–V
S1
1
2
3
4
8
7
6
5
+V
S2(1)
+V
S1
Output
–V
S2(1)
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-Brown
Corporation recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
NOTE: (1) Making use of all four power supply pins is highly recommended,
although not required. Using these four pins, instead of pins 4 and 7 only, will
reduce the effective pin impedance and substantially improve distortion.
®
3
OPA655
TYPICAL PERFORMANCE CURVES
At T
A
= +25°C, V
S
=
±5V,
R
FB
= 100Ω, and R
L
= 100Ω, unless otherwise noted. R
FB
= 0 for G = +1.
INPUT VOLTAGE AND CURRENT NOISE
100
Input Voltage Noise (nV/√Hz)
Input Current Noise (fA/√Hz)
1000
INPUT BIAS AND OFFSET CURRENT
vs TEMPERATURE
Offset Current (pA)
Input Bias Current (pA)
100
I
OS
10
I
B
10
Voltage Noise
Current Noise
1
10
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
1
–50
0
50
Temperature (°C)
100
CLOSED-LOOP BANDWIDTH
6
G = +1
3
0
Gain (dB)
CLOSED-LOOP BANDWIDTH
12
G = +2
9
6
Gain (dB)
DIP
SO-8
Bandwidth
= 400MHz
DIP, SO-8
Bandwidth = 185MHz
3
0
–3
–6
–3
–6
–9
–12
1M
10M
100M
Frequency (Hz)
1G
3G
–9
–12
100k
1M
10M
Frequency (Hz)
100M
1G
CLOSED-LOOP BANDWIDTH
20
G = +5
17
14
DIP, SO-8
Bandwidth = 57MHz
CLOSED-LOOP BANDWIDTH
26
G = +10
23
20
Gain (dB)
DIP, SO-8
Bandwidth = 24MHz
Gain (dB)
11
8
5
–2
–1
–4
100k
17
14
11
8
5
2
100k
1M
10M
Frequency (Hz)
100M
1G
1M
10M
Frequency (Hz)
100M
1G
®
OPA655
4
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25°C, V
S
=
±5V,
R
FB
= 100Ω, and R
L
= 100Ω, unless otherwise noted. R
FB
= 0 for G = +1.
HARMONIC DISTORTION vs FREQUENCY
(V
O
= 2Vp-p, G = +1)
–40
–50
–60
2f
O
–70
–80
–90
–100
1M
10M
Frequency (Hz)
100M
3f
O
–40
–50
–60
–70
–80
–90
–100
1M
HARMONIC DISTORTION vs FREQUENCY
(V
O
= 2Vp-p, G = +2)
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
2f
O
3f
O
10M
Frequency (Hz)
100M
HARMONIC DISTORTION vs FREQUENCY
(V
O
= 2Vp-p, G = +5)
–40
–50
–60
–70
–80
–90
–100
1M
10M
Frequency (Hz)
100M
3f
O
–85
5MHz HARMONIC DISTORTION
vs OUTPUT SWING
G = +1
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
–90
–95
–100
–105
–110
–115
0.1
1
Output Swing (Vp-p)
10
3f
O
2f
O
2f
O
10MHz HARMONIC DISTORTION
vs OUTPUT SWING
–60
G = +1
–65
–85
HARMONIC DISTORTION vs TEMPERATURE
(V
O
= 2Vp-p, G = +1, f
O
= 5MHz)
Harmonic Distortion (dBc)
–70
2f
O
–75
–80
–85
–90
–95
0.1
1
Output Swing (Vp-p)
10
3f
O
Harmonic Distortion (dBc)
–90
2f
O
–95
3f
O
–100
–50
–25
0
25
50
75
100
Temperature (°C)
®
5
OPA655
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参数对比
与OPA655U相近的元器件有:OPA655P、OPA655。描述及对比如下:
型号 OPA655U OPA655P OPA655
描述 OP-AMP, 2000 uV OFFSET-MAX, 240 MHz BAND WIDTH, PDSO8 OP-AMP, 2000 uV OFFSET-MAX, 240 MHz BAND WIDTH, PDIP8 OP-AMP, 2000 uV OFFSET-MAX, 240 MHz BAND WIDTH, PDSO8
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER 运算放大器
最大输入失调电压 2000 µV 2000 µV 2000 mV
功能数量 1 1 1
端子数量 8 8 8
表面贴装 YES NO Yes
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING THROUGH-HOLE GULL WING
端子位置 DUAL DUAL
是否Rohs认证 不符合 不符合 -
厂商名称 Burr-Brown Burr-Brown -
Reach Compliance Code unknow unknow -
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK -
最大平均偏置电流 (IIB) 0.008 µA 0.008 µA -
25C 时的最大偏置电流 (IIB) 0.00005 µA 0.00005 µA -
最小共模抑制比 60 dB 60 dB -
标称共模抑制比 70 dB 70 dB -
频率补偿 YES YES -
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 -
JESD-609代码 e0 e0 -
低-偏置 YES YES -
低-失调 NO NO -
标称负供电电压 (Vsup) -5 V -5 V -
最高工作温度 85 °C 85 °C -
最低工作温度 -40 °C -40 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 SOP DIP -
封装等效代码 SOP8,.25 DIP8,.3 -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE IN-LINE -
电源 +-5 V +-5 V -
认证状态 Not Qualified Not Qualified -
最小摆率 250 V/us 250 V/us -
标称压摆率 300 V/us 300 V/us -
最大压摆率 31 mA 31 mA -
供电电压上限 5.5 V 5.5 V -
标称供电电压 (Vsup) 5 V 5 V -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子节距 1.27 mm 2.54 mm -
标称均一增益带宽 240000 kHz 240000 kHz -
最小电压增益 316.2 316.2 -
宽带 YES YES -
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