Two-chip SIDACtor Device
Two-chip
SIDACtor
Device
1
(T)
3
(R)
2
(G)
The two-chip modified TO-220
SIDACtor
solid state device protects telecommunication
equipment in applications that reference Tip and Ring to earth ground but do not require
balanced protection.
SIDACtor
devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
P0602A_
P1402A_
P1602A_
P2202A_
P2702A_
P3002A_
P3602A_
P4202A_
P4802A_
P6002A_
V
DRM
Volts
25
58
65
90
120
140
170
190
220
275
V
S
Volts
40
77
95
130
160
180
220
250
300
350
V
DRM
Volts
50
116
130
180
240
280
340
380
440
550
V
S
Volts
80
154
190
260
320
360
440
500
600
700
V
T
Volts
4
4
4
4
4
4
4
4
4
4
I
DRM
µAmps
5
5
5
5
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
800
800
800
800
I
T
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
50
150
150
150
150
150
150
150
150
150
C
O
pF
110
50
50
40
40
40
40
30
30
30
Pins 1-2, 3-2
Pins 1-3
* For individual “AA”, “AB”, and “AC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed
SIDACtor
devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
• Off-state capacitance (C
O
) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product.
“AB” and “AC” capacitance is approximately 2x the listed value.
Surge Ratings
I
PP
2x10 µs
Amps
150
250
500
I
PP
8x20 µs
Amps
150
250
400
I
PP
10x160 µs
Amps
90
150
200
I
PP
10x560 µs
Amps
50
100
150
I
PP
10x1000 µs
Amps
45
80
100
I
TSM
60 Hz
Amps
20
30
50
di/dt
Amps/µs
500
500
500
Series
A
B
C
http://www.littelfuse.com
+1 972-580-7777
2 - 30
SIDACtor
®
© 2004 Littelfuse, Inc.
Data Book and Design Guide
Two-chip SIDACtor Device
Thermal Considerations
Package
Modified
TO-220
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
50
Unit
°C
°C
°C/W
PIN 1
PIN 2
PIN 3
+I
+I
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
T
I
S
S
I
H
I
DRM
-V
-V
V
T
V
T
V
DRM
V
DRM
V
S
V
S
100
Peak
Value
Waveform = t
r
x t
d
+V
+V
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
-I
V-I Characteristics
t
r
x t
d
Pulse Wave-form
14
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
SIDACtor
®
Data Book and Design Guide
2 - 31
http://www.littelfuse.com
+1 972-580-7777
Data Sheets
Mouser Electronics
Authorized Distributor
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:
P0602ACRP