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P1301AA2

Surge Protection Circuit, PSIP3, TO-220, 3 PIN

器件类别:无线/射频/通信    电信电路   

厂商名称:Littelfuse

厂商官网:http://www.littelfuse.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Littelfuse
零件包装代码
SFM
包装说明
SIP,
针数
3
Reach Compliance Code
unknown
JESD-30 代码
R-PSIP-T3
功能数量
1
端子数量
3
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SIP
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
245
认证状态
Not Qualified
表面贴装
NO
电信集成电路类型
SURGE PROTECTION CIRCUIT
温度等级
INDUSTRIAL
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
60
Base Number Matches
1
文档预览
Two-chip SLIC Protector Modified TO-220
RoHS
¨
This two-chip SLIC modified TO-220 unidirectional protector is constructed with a
1
(T)
3
(R)
2
(G)
SIDACtor
®
device and an integrated diode. It protects SLICs (Subscriber Line Interface
Circuits) from damage during transient voltage activity and enables line cards to comply
with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45,
IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68).
For details of specific design criteria, see Figure 6.40 through Figure 6.43 in Section 6,
“Reference Designs” of this
Telecom Design Guide.
Electrical Parameters
Part
Number *
P0641A_2L
P0721A_2L
P0901A_2L
P1101A_2L
P1301A_2L
P1701A_2L
V
DRM
Volts
58
65
75
95
120
160
V
S
Volts
77
88
98
130
160
200
V
T
Volts
4
4
4
4
4
4
V
F
Volts
5
5
5
5
5
5
I
DRM
µAmps
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
I
T
Amps
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
120
120
120
120
120
120
Pins 1-2, 3-2
*
“L” in part number indicates RoHS compliance.
For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• V
DRM
is measured at I
DRM.
• V
S
and V
F
are measured at 100 V/µs.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
• Parallel capacitive loads may affect electrical parameters.
• Compliance with GR 1089 or UL 60950 power fault tests may require special design considerations. Contact the factory for further
information.
Surge Ratings in Amps
I
PP
Series
0.2x310 * 2x10 *
8x20 *
0.5x700 ** 2x10 ** 1.2x50 **
Amps
A
C
20
50
Amps
150
500
Amps
150
400
10x160 *
10x160 **
Amps
90
200
10x560 *
10x560 **
Amps
50
150
5x320 *
9x720 **
Amps
75
200
10x360 * 10x1000 * 5x310 *
I
TSM
10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
Amps
75
175
Amps
45
100
Amps
75
200
Amps
20
50
di/dt
Amps/µs
500
500
* Current waveform in µs
** Voltage waveform in µs
www.littelfuse.com
3 - 68
© 2006 Littelfuse • Telecom Design Guide
Two-chip SLIC Protector Modified TO-220
Thermal Considerations
Package
Modified
TO-220
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
50
Unit
°C
°C
°C/W
PIN 1
PIN 2
PIN 3
Capacitance Values
pF
Pin 1-2 / 3-2 (4-5 / 6-5)
Tip-Ground, Ring-Ground
MAX
200
200
190
190
180
180
160
160
160
160
125
125
MIN
20
20
20
20
20
20
15
15
15
15
15
15
MAX
105
105
105
105
105
105
105
105
105
105
105
105
pF
Part Number
P0641AA2L
P0641AC2L
P0721AA2L
P0721AC2L
P0901AA2L
P0901AC2L
P1101AA2L
P1101AC2L
P1301AA2L
P1301AC2L
P1701AA2L
P1701AC2L
MIN
40
40
35
35
30
30
25
25
25
25
25
25
Note: Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
Telecom Design Guide • © 2006 Littelfuse
3 - 69
www.littelfuse.com
SIDACtor Devices
Two-chip SLIC Protector Modified TO-220
+I
V
F
I
PP
– Peak Pulse Current – %I
PP
100
Peak
Value
t
r
= rise time to peak value
t
d
= decay time to half value
V
S
V
DRM
-V
V
T
+V
Waveform = t
r
x t
d
I
DRM
I
H
I
S
I
T
-I
50
Half Value
0
0
t
r
t
d
t – Time (µs)
V-I Characteristics
t
r
x t
d
Pulse Waveform
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
14
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
www.littelfuse.com
3 - 70
© 2006 Littelfuse • Telecom Design Guide
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