INFRARED DETECTOR
MCT photoconductive detector
P2748/P5274 series, P3257-50
Dewar type detector with high sensitivity and high-speed response in long wavelength range
Features
The band gap can be adjusted by controlling the composition
ratio of HgTe and CdTe. Utilizing this fact, various types are
available in different spectral characteristics.
l
Photoconductive element that decreases its resistance
by input of infrared light
l
Micro-cooled type available
This type of cooling does not require pour-filled liquid
nitrogen.
l
Custom devices available
Custom devices not listed in this catalog are also available
with different spectral response, active area sizes and
number of elements.
Glass dewar type not requiring repumping is also provided.
Applications
l
Choice of spectral response range (up to 25 µm)
l
FTIR
l
Infrared spectrophotometer
l
Thermal imaging
l
Remote sensing
l
CO
2
laser detection
Accessories (Optional)
l
Valve operator
A3515
l
Amplifiers for dewar type MCT photoconductive detector
C5185
l
Power supply for amplifier
C3871
l
Infrared detector module with preamp P7752-10
Absolute maximum ratings
Allowable
Operating
Storage
current
temperature temperature
Topr
Tstg
(mA)
(°C)
(°C)
40
40
-40 to +60
-55 to +60
20
40
20
40
-40 to +55
-45 to +55
I
General rating / Absolute maximum ratings
Type No.
P2748-40
P2748-41
P2748-42
P5274
P5274-01
P3257-50
Dimensional
outline/
Window
material *
➀/Z
➁/Z
➀/Z
➀/K
➂/Z
Package
Side-on type metal dewar
Head-on type metal dewar
Side-on type metal dewar
Stirling type metal
Nitrogen
maintenance
Active area
time
Cooling
Min.
(h)
(mm)
1×1
1×1
LN
12
0.25 × 0.25
1×1
1×1
Micro-cooled
1×1
-
I
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
Photo
condition
Cut-off
sensitivity
sensitivity *
2
Element
wavelength
wavelength
S
temperature
lc
l=lp
lp
T
(°C)
(µm)
(µm)
(V/W)
1000
1000
10000
500
250
1000
D
*
(500, 1200, 1)
D
*
(lp, 1200, 1)
NEP
l=lp
Rise
Dark
time
resistance
tr
0 to 63 %
Rd
(µs)
(W)
Type No.
Min.
Typ.
1/2
(cm· Hz /W) (cm· Hz
1/2
/W)
(cm· Hz
1/2
/W)
P2748-40
P2748-41
2 × 10
10
4.0 × 10
10
0.6
40
12
14
1 × 10
10
P2748-42
-196
P5274
14
17
2 × 10
9
1 × 10
10
1.5 × 10
10
0.6
30
9
9
10
P5274-01
17
22
1 × 10
5 × 10
1.0 × 10
0.4
100
10
10
10
P3257-50
2 × 10
4.0 × 10
0.6
40
12
14
1 × 10
*1: Window material K: KRS-5, Z: ZnSe
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
(W/Hz
1/2
)
2.5 × 10
-12
2.5 × 10
-12
6.3 × 10
-12
6.7 × 10
-12
1.0 × 10
-11
2.5 × 10
-12
1
MCT photoconductive detector
I
Spectral response
10
11
P2748/P5274 series, P3257-50
I
S/N vs. bias current
(Typ. T= -196 ˚C)
P2748-40
20
D*
16
(Typ.)
D* (cm · Hz
2
/W)
10
10
RELATIVE VALUE
P5274
1
12
S
8
10
9
P5274-01
4
N
10
8
0
5
10
15
20
25
0
5
10
15
20
25
WAVELENGTH (µm)
KIRDB0072EC
BIAS CURRENT (mA)
KIRDB0073EB
Spectral response can be shifted upon
request.
The detector must be operated in a range
where the D* becomes Max.
I
Noise frequency characteristic
100
(Typ. )
I
Measurement circuit
CHOPPER
1200 Hz
BAND-PASS
FILTER
r.m.s.
METER
NOISE (nV/Hz
2
)
DETECTOR
BLACK BODY
500 K
fo=1200 Hz
∆f=120
Hz
INCIDENT ENERGY: 2.64 µW/cm
2
1
10
KIRDC0007EA
1
10
100
1000
10000
FREQUENCY (Hz)
KIRDB0074EC
2
MCT photoconductive detector
I
Dimensional outlines (unit: mm)
➀
P2748-40/-42, P5274 series
LN
2
FILL PORT 12.5
P2748/P5274 series, P3257-50
51 ± 1
32 ± 1
63.5 ± 1
28.5
PUMP-OUT PIPE 9.5
43 ± 1 46 ± 1
72 ± 1
102 ± 1
95 ± 1
SIGNAL
OUTPUT LEAD
172 ± 2
PHOTOSENSITIVE
SURFACE
37 ± 1
6.5
8.5 ± 0.5
66.8 ± 1
DETECTOR
NC
DETECTOR
KIRDA0131EC
➁
P2748-41
LN
2
FILL PORT 12.5
32 ± 1
66 MAX.
63.5 ± 1
28.5
PUMP-OUT
PORT 9.5
70 ± 2
102 ± 2
95 ± 2
46 ± 1
10 ± 1
OUTPUT
PIN
172 ± 2
PHOTOSENSITIVE
SURFACE
8.5 ± 0.5
6.5
51.2 ± 1
DETECTOR
NC
DETECTOR
KIRDA0129EA
7.9 ± 1
3
MCT photoconductive detector
➂
P3257-50
P2748/P5274 series, P3257-50
PUMP-OUT VALVE 10 MAX.
12.8
10.6 MAX.
29.0 MAX.
26.7
-0.01
22
+0
12.7
(2 ×) 56UNC-2B DEPTH: 5.5 4PL
MOUNTING HOLE
FOV
PHOTOSENSITIVE
SURFACE
50.8 ± 0.1
56.0 ± 0.3
MOUNT SIDE
58
38.9 MAX.
OUTPUT PIN
28.3 MAX.
23.8
43
36.4
(4 ×)
2.5
39.4
34.8 MAX.
25.9
26.8
20.1 MAX.
70.0
27.4 MAX.
50.1 MAX.
14.5 MAX.
50.3 MAX.
81.1 MAX.
76.5
KIR
KIRDA0130EA
Board thickness including
mounted components: 20 MAX.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1021E03
Oct. 2002 DN
4
微控制器 MCU
