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Implements all BTG anti-collision protocols: Fast
SWITCH-OFF, SLOW-DOWN, and FREE-
RUNNING
Can be used to implement low frequency
inductive coupled transponders, high frequency
RF coupled transponders or bi-frequency
transponders
Reading 500 transponders in less than one
second for high frequency applications
Factory programmed 64 bit ID number
Data rate options form 4 kbit/s to 64 kbit/s
Manchester data encoding
Any field frequency: Typically 125 kHz, 13.56
MHz inductive and 100 MHz to 2.54 GHz RF
Data transmission done by amplitude modulation
Trimmed 110 pF
±
3% on-chip resonant
capacitor
On-chip oscillator, rectifier and voltage limiter
Low power consumption
Low voltage operation : down to 1.5 V at ambient
temperature
-40 to +85
°
C operating temperature range
Access control
Animal tagging
Asset control
Sports event timing
Licensing
Electronic keys
Auto-tolling
3LQ $VVLJQPHQW
P4 0 2 2
Fig. 1
3DG 1
1
2
3
4
5
6
7
8
9
10
11
1DPH
XCLK
V
DD
M
M
TST
COIL1
COIL2
V
SSTST
V
SS
GAP
SI
TMC
'HVFULSWLRQ
The P4022 chip implements patented anti-collision
protocols for both
KLJK
frequency and
ORZ
frequency
applications. It is even possible to identify
transponders with identical codes, thereby making it
possible to count identical items. The chip is typically
used in “passive” transponder applications, i.e. it does
not require a battery power source. Instead, it is
powered up by an electromagnetic energy field or
beam transmitted by the reader, which is received
and rectified to generate a supply voltage for the chip.
A pre-programmed code is transmitted to the reader
by varying the amount of energy that is reflected back
to the reader. This is done by modulating an antenna
or coil, thereby effectively varying the load seen by
the reader.
)XQFWLRQ
external test clock input
positive supply
connection to antenna
test output
Coil terminal 1
Coil terminal 2
negative test supply output
negative supply
GAP input
Serial test data input (pull down)
Test mode control (pull down)
Table 1
1
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7\SLFDO 2SHUDWLQJ &RQILJXUDWLRQV
/RZ IUHTXHQF\
inductive transponder .
VD D
M
C OIL1
L
C OIL2
GAP
D1
VSS
3
C PX
0HGLXP IUHTXHQF\
applications are those which
cannot use the integrated full wave rectifier and
where the transponder power is transmitted through a
coil. External microwave schottky diodes are required
to rectify the carrier wave. An external power storage
capacitor can be added to improve reading range.
These applications allow higher data rates (64 kbit/s).
Where reading rates of 500 transponders per second
can be achieved
+LJK IUHTXHQF\
RF transponder implementation.
Fig. 2
Low frequency applications are those applications
that can make use of the on-chip full wave rectifier
bridge to rectify the incident energy. These are
typically applications that use inductive coupling to
transmit energy to the chip. The carrier frequency is
typically less than 500 kHz. The design of the on-chip
rectifier and resonance capacitor is optimized for
frequencies in the order of 125 kHz. Low frequency
transponders can be implemented using just a P4022
chip and an external coil that resonates with the on-
chip tuning capacitor at the required carrier
frequency. An external power storage capacitor is
required to maintain the supply voltage above the
integrated power on reset level.
In a very strong field, due to the forward resistance of
the diode, the GAP input must be limited at V
SS
-0.3V
by a schottky diode (D1)
0HGLXP IUHTXHQF\
(13.56 MHz) inductive
transponder implementation
VD D
M
VDD
M
COIL1
D3
P4022
CPX
COIL2
D2*
GAP
VSS
D1
Fig. 4
D2 in figure 2 and 3 is optional and is only used for
GAP enable versions. All diodes are schottky type.
High frequency applications are similar to medium
frequency
applications.
These
are
typically
applications that use electromagnetic RF coupling to
transmit energy to the chip using carrier frequencies
greater than 100 MHz. High frequency transponders
can be implemented using a P4022 chip, two or three
microwave diodes and a printed antenna. High
frequency RF coupled applications typically have
higher reading distances (> 4 m) and
%LIUHTXHQF\
applications are possible by
implementing a coil between coil1 and coil2
connections in the high frequency application (fig. 4).
L
C
D 2*
GAP
3
C PX
VSS
D1
Fig. 3
L:
C+:
coil antenna (typical value 1.35 µH).
tuning capacitor (typical value 100 pF)
2
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3DUDPHWHU
Maximum AC peak current
induced on COIL1 and COIL2
Maximum DC voltage induced
1)
between M and V
SS
Maximum DC current
1)
supplied into M
Power supply
Max. voltage other pads
Min. voltage other pads
Storage temperature
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
6\PERO
I
COIL
V
M
I
M
V
DD
- V
SS
V
max
V
max
T
STORE
V
ESD
&RQGLWLRQV
± 30 mA
5V
60 mA
-0.3 to V
M
V
DD
+ 0.3 V
V
SS
- 0.3 V
o
-55 to +125 C
1000 V
3
+DQGOLQJ 3URFHGXUHV
This device has built-in protection against high static
voltages or electric fields; however, due to the unique
properties of this device, anti-static precautions
should be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only
occur when all the terminal voltages are kept within
the supply voltage range.
2SHUDWLQJ &RQGLWLRQV
3DUDPHWHU
Operating temperature
Maximum coil current
AC voltage on coil*
DC voltage on M*
1) whatever is reached first
Table 2
Stresses above these listed maximum ratings may
cause permanent damage to the device. Exposure
beyond specified operating conditions may affect
device reliability or cause malfunction.
6\PERO
T
A
I
COIL
V
COIL
V
M
0LQ 7\S 0D[ 8QLWV
o
-40
+85 C
-10
10
mA
15
V
pp
3.5
V
Table 3
* The AC voltage on the coil and the DC voltage at
pad M are limited by the on-chip shunt regulator
loaded at I
COIL
in table 3
.
(OHFWULFDO &KDUDFWHULVWLFV
3DUDPHWHU
Supply voltage (V
DD
- V
SS
)
Regulated voltage
Oscillator frequency
Power-on reset threshold
Power-on reset threshold
Power-on reset hysteresis
GAP input time constant
Modulation transistor ON resistance
Resonance capacitor
Supply capacitor
Current consumption in modulation state
Shunt Regulator current consumption
Gap pull-up current consumption
Dynamic current consumption
V
SUPPLY
between 2.0 V and 3.0 V, T
A
= 25 C, unless otherwise specified.
6\PERO
V
SUPPLY
V
M
F
OSC
V
PONR
V
PONF
V
PHYS
T
GAP
R
ON
C
R
C
SUP
I
MOD
I
SHUNT
I
GAP
I
DYN
7HVW FRQGLWLRQV
I
M
= 50 mA
V
SUPPLY
= 3 V
V
SUPPLY
rising
V
SUPPLY
falling
Extrapolated with an external
capacitor of 64nF
V
SUPPLY
= 3 V
f = 100KHz, 100mVpp
f = 100KHz, 100mVpp
V
SUPPLY
= 2 V
V
SUPPLY
= 2V
V
GAP
= 0V, V
SUPPLY
= 2V
f
OSC
= 128KHz, V
SUPPLY
= 2V
0LQ
V
PONR
+100mV
3.3
92
0.9
0.7
80
7\S
4
125
1.4
1.2
160
0.4
4
110
140
9
200
5
5
0D[ 8QLWV
V
M
V
4.7
V
160 kHz
1.8
V
1.6
V
240
mV
µs
8
113.3
13
500
7
6.5
O
Ω
pF
pF
µA
nA
µA
µA
106.7
6
1.8
3.5
Table 4
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1) All timings are derived from the on-chip oscillator.
2) The minimum
ORZ IUHTXHQF\
GAP width for a single chip is 1 bit at its own clock frequency. The reader must
however allow for the spread in clock frequencies possible in a group of tags. Therefore the minimum width of the
GAP in MUTE and WAKE-UP signals must be 1.5 bits. High frequency GAPs can be arbitrarily.
3) The maximum GAP width for a single chip is 6 bits at its own clock frequency. The reader must however allow
for the spread in clock frequencies possible in a group of tags. Therefore the maximum width of the GAP in MUTE
and WAKE-UP signals must be 5 bits.
3DUDPHWHU
High frequency GAP width
High frequency ACK GAP width
High frequency MUTE and WAKE-UP GAP width
Low frequency ACK GAP width
Low frequency MUTE and WAKE-UP GAP width
GAP separation in WAKE-UP signal
6\PERO 7HVW FRQGLWLRQV
T
HFGAP
W
HFACK
W
HFMUTE
W
LFGAP
W
LFACK
W
LFMUTE
0LQ
50
7\S
0D[ 8QLWV
ns
6
bit
5
bit
6
bit
5
bit
5
bit
1.0
1.5
1.5
2
2
2
Table 5
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The global current consumption of the device defines
the external storage capacitor.
When the device modulate, the supply voltage is
picked from the supply capacitor and should never
decrease under the falling edge of the power on reset
(
V
PONF
). If this occurs, the device goes in a reset
mode and any data transmission is aborted. The
worst case for the storage capacitor calculation is
when the device is put in the electromagnetic field. At
this moment the supply reaches the V
PONR
and start
to modulate. During modulation the power store in the
capacitor must be high enough so that at the end of
the modulation the supply is higher than V
PORF.
. This
means that the voltage reduction on the capacitor
must be less than the hysteresis of the power on
reset (V
PHYS
).
And this when the chip has a supply voltage of
around the power on reset threshold
The total current consumption from the storage
capacitor is defined by the modulation current I
MOD
,
This current is the consumption of the power on reset
block, oscillator and the logic which work at a typical
frequency of 125KHz. The GAP current is also
included in this parameter.
The duration where this currents is present for the
capacitor calculation, is dependent of the data rate
&DOFXODWLRQ H[DPSOH
Below we define typical cases combinations :
F
OSC
= 125 KHz
V
PHYS
= 120 mV
I
MOD
= 9
µA
Data rate is 4 KBaud.
,
02'
* 128 * 10
3
&3[
=
)
26&
*
9
+<6
*
%DXG5DWH
9 * 10
−
6
* 128 * 10
3
=
=
14.4
Q)
125 * 10
3
* 160 * 10
−
3
* 4 * 10
3
Of course, this value can be adapted to the
electromagnetic power and to the performances that
must be achieved. If a tag is put in a field within a
short time, the emitting power must be high enough
to charge up the capacitor.
The chip integrates a 140pF supply capacitor.
4
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M
VDD
3
VDD
P
R
PON
COIL1
D2
Q1
LOGIC
CP
D4
CR
D3
Shunt
Q2
N
GAP
TST
C
VSS
OSC
COIL2
D1
DG
VDD
VDD
RG
VSS VSS VSS
VSS
GAP
CG
SI
XCLK TMC
Fig. 5
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5HVRQDQFH FDSDFLWRU
The resonance capacitor CR has a nominal value of
110 pF and is trimmed to achieving a high stability
over the whole production. For resonance at 125 kHz
an external 14.7 mH coil is required. At 13.65 MHz
the required coil inductance drops to 1.2
µH.
5HFWLILHU EULGJH
Diodes D1-D4 form a full wave rectifier bridge. They
have relatively large forward resistances (100 -
200
Ω).
This is sufficient at 125 kHz, where the
output impedance of the tuned circuit is high, but at
13.5 MHz the diode resistance becomes significant
and external diodes have to be used to bypass the
internal ones. The diode resistance affects the rate
at which the power capacitor CP can be charged. It
also affects the modulation depth that can be
achieved.
6KXQW UHJXODWRU
The shunt regulator has two functions. It limits the
voltage across the logic and in high frequency
applications it limits the voltage across the external
microwave Schottky diodes, which typically have
reverse breakdown voltages of 5 V.
2VFLOODWRU
The on-chip RC oscillator has a center frequency of
128 kHz. It gives the main clock of the logic and
defines the effective data/rate.
The reset signal keeps the logic in reset when the
supply voltage is lower than the threshold voltage.
This prevents incorrect operation and spurious
transmissions when the supply voltage is too low for
the oscillator and logic to work properly. It also
ensures that transistor Q2 is off and transistor Q1 is
on during power-up to ensure that the chip starts up.
0RGXODWLRQ WUDQVLVWRU
The N channel transistor Q2 is used to modulate the
transponder coil or antenna. When it is turned on it
loads the antenna or coil, thereby changing the load
seen by the reader antenna or coil, and effectively
changing the amount of energy that is reflected to the
reader. Its low on resistance is especially designed
for high frequency applications.
&KDUJH SUHVHUYDWLRQ WUDQVLVWRU
The P channel transistor Q1 is turned off whenever
the modulation transistor Q2 is turned on to prevent
Q2 from discharging the power storage capacitor.
This is done in a non-overlapping manner, i.e. Q1 is
first turned off before Q2 is turned on, and Q2 is
turned off before Q1 is turned on.
5
