RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
P4FMAJ
SERIES
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
400 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AC
0.067 (1.70)
0.051 (1.29)
0.180(4.57)
0.160(4.06)
0.110 (2.79)
0.086 (2.18)
Ratings at 25
o
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
0.209 (5.31)
0.185 (4.70)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation at T
A
= 25 C, T
P
= 1mS ( Note 1 )
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C ( Note 2 )
Peak Forward Surge Current, 8.3mS single half sine wave-
superimposed on rated load ( JEDEC METHOD ) ( Note 3 )
Maximum Instantaneous Forward Voltage at 25A for
unidirectional only ( Note 4 )
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M
(
AV
)
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 400
SEE TABLE 1
1.0
40
3.5/6.5
-55 to + 150
UNITS
Watts
Amps
Watts
Amps
Volts
0
C
2002-12
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 5.0V max. for devices of V(
BR
) > 200V.
RATING AND CHARACTERISTIC CURVES ( P4FMAJ6.8 THRU P4FMAJ400CA )
FIG. 1 - PEAK PULSE POWER RATING CURVE
100
P
PPM
, PEAK PULSE POWER, KW
Non-Repetitive
Pulse Waveform
Shown in Fig.3
T
A
= 25
FIG. 2 - PULSE DERATING CURVE
PEAK PULSE POWER (PPP) OR CURRENT
(I
PP
) DERATING IN PERCENTAGE,%
100
75
10
50
1.0
0.2X0.2"(5.0X5.0mm)
copper pad areas
25
0.1
0.1uS
0
1.0uS
10uS
100uS
1.0mS
10mS
0
25
50
75
100 125 150
175
)
200
T
P
, PULSE WIDTH, sec
T
A
, AMBIENT TEMPERATURE,(
FIG. 3 - PULSE WAVEFORM
150
I
PPM
, PEAK PULSE CURRENT,%
tr = 10usec.
Peak Value
IPPM
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
100000
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of I
PPM
C
J
, CAPACITANCE, pF
f = 1.0 MHz
Vsig = 50mVp-p
T
J
= 25
100
I
PPM
2
10/1000usec. Waveform
as Defined by R.E.A.
HALF VALUE -
10000
Measured at
Zero Bias
50
1000
Measured at Devices
Stand off
Voltage,VWM
0
0
1.0
2.0
t, TIME,mS
3.0
4.0
10
1.0
10
100
200
V(
BR
), BREAKDOWN VOLTACE, VOLTS
RECTRON
RATING AND CHARACTERISTIC CURVES ( P4FMAJ6.8 THRU P4FMAJ400CA )
FIG. 5 - STEADY STATE POWER DERATING CURVE
P
M
(AV), STEADY STATE POWER
DISSIATION, WATTS
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL
50
I
FSM
, PEAK FORWARD SURGE
CURRENT AMPERES
8.3ms Single Half Sine-Wave
(JEDED Method) TJ = TJ max.
1.00
60Hz
Resistive or Inductive Load
0.75
40
30
20
10
0.50
0.25
0
0
25
50
75
100 125
150
175 200
)
T
L
, LEAD TEMPERATURE (
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 7 -TYPICAL REVERSE LEAKAGE
I
D
, INSTANTANEOUS REVERSE LEAKAGE
CHRRENT, MICROAMPERES
CHARACTERISTICS
100
10
Measured at Devices
Stand-off
Voltage, VWM
1
0.1
T
J
= 25
0.01
0
100
200
300
400
600
V(
BR
) BREAKDOWN VOLTAGE, VOLTS
RECTRON
TRANSIENT VOLTAGE SUPPRESSORS
400W SERIES TVS DIODES / DO-214AC ( CASE 2 ) 400W
Breakdown Voltage
V
BR
@I
T
(Volts)
MIN.
P4FMAJ6.8
P4FMAJ6.8A
P4FMAJ7.5
P4FMAJ7.5A
P4FMAJ8.2
P4FMAJ8.2A
P4FMAJ9.1
P4FMAJ9.1A
P4FMAJ10
P4FMAJ10A
P4FMAJ11
P4FMAJ11A
P4FMAJ12
P4FMAJ12A
P4FMAJ13
P4FMAJ13A
P4FMAJ15
P4FMAJ15A
P4FMAJ16
P4FMAJ16A
P4FMAJ18
P4FMAJ18A
P4FMAJ20
P4FMAJ20A
P4FMAJ22
P4FMAJ22A
P4FMAJ24
P4FMAJ24A
P4FMAJ27
P4FMAJ27A
P4FMAJ30
P4FMAJ30A
P4FMAJ33
P4FMAJ33A
P4FMAJ36
P4FMAJ36A
P4FMAJ39
P4FMAJ39A
P4FMAJ43
P4FMAJ43A
P4FMAJ47
P4FMAJ47A
P4FMAJ51
P4FMAJ51A
P4FMAJ56
P4FMAJ56A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
TYPE
MAX.
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Reverse
Stand off
Voltage
V
WM
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current
I
PPM
(Amps)
37
38.1
34.2
35.4
32
33.1
29
29.9
26.7
27.6
24.7
25.6
23.1
24
21.1
22
18.2
18.9
17
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8
7.1
7.4
6.5
6.7
5.9
6.2
5.4
5.7
5.0
5.2
Maximum
Clamping
Voltage
at I
PPM
V
C
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
RECTRON
TRANSIENT VOLTAGE SUPPRESSORS
400W SERIES TVS DIODES / DO-214AC ( CASE 2 ) 400W
Breakdown Voltage
V
BR
@I
T
(Volts)
MIN.
P4FMAJ62
P4FMAJ62A
P4FMAJ68
P4FMAJ68A
P4FMAJ75
P4FMAJ75A
P4FMAJ82
P4FMAJ82A
P4FMAJ91
P4FMAJ91A
P4FMAJ100
P4FMAJ100A
P4FMAJ110
P4FMAJ110A
P4FMAJ120
P4FMAJ120A
P4FMAJ130
P4FMAJ130A
P4FMAJ150
P4FMAJ150A
P4FMAJ160
P4FMAJ160A
P4FMAJ170
P4FMAJ170A
P4FMAJ180
P4FMAJ180A
P4FMAJ200
P4FMAJ200A
P4FMAJ220
P4FMAJ220A
P4FMAJ250
P4FMAJ250A
P4FMAJ300
P4FMAJ300A
P4FMAJ350
P4FMAJ350A
P4FMAJ400
P4FMAJ400A
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
332
360
380
TYPE
MAX.
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Reverse
Stand off
Voltage
V
WM
(Volts)
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Current
I
PPM
(Amps)
4.7
5.0
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.5
1.2
1.3
1.1
1.2
0.97
1.00
0.83
0.87
0.73
0.76
Maximum
Clamping
Voltage
at I
PPM
V
C
(Volts)
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
Notes :
1. V
BR
measured after I
T
applied for 300ms. I
T
= square pulse or equivalent.
2. For bidirectional use C or CA suffixs for all types (ex. P4FMAJ6.8C,P4FMAJ400CA)
electrical characteristics apply in both directions.
3. For bidirectional types having V
WM
of 10 volts and less, the I
D
Iimit is doubled.
RECTRON
Microchip MCU
