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P4KE130AT

Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Littelfuse

厂商官网:http://www.littelfuse.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
Littelfuse
零件包装代码
DO-41
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW IMPEDANCE
最大击穿电压
137 V
最小击穿电压
124 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
2
最大非重复峰值反向功率耗散
400 W
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
1 W
认证状态
Not Qualified
最大重复峰值反向电压
111 V
表面贴装
NO
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Silicon Avalanche Diodes
400W Axial Leaded Transient Voltage Supressors
RoHS
FEATURES
P4KE Series
®
RoHS
compliant
Plastic package
Glass passivated chip junction in DO-41 Package
400W surge capability at 10/1000 µs wave form
Excellent clamping capability
Low zener impedance
Fast response time: typically less than 1.0ps from 0 Volts
to BV min.
Typical IR less than 1µA above 10V
(9.5mm) lead length, 5lbs., (2.3kg) tension
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number:
E128662
MAXIMUM RATINGS AND CHARACTERISTICS
@25˚C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak Pulse Power Dissipation at
TA=25˚C, TP=1ms (note 1)
Steady State Power Dissipation at
TL=75˚C, Lead lenghts .375”,
(9.5mm)(note2)
Peak Forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 3)
Operating junction and Storage
Temperature Range
IFSM
40
Amps
SYMBOL
PPPM
VALUE
Min
400
UNIT
Watts
ORDERING INFORMATION
P4KE
CA
Voltage
Bi-Directional
5% Voltage Tolerance
Packaging Option
B= Bulk (500 pcs)
T= Tape and reeled (5000 pcs)
PM(AV)
1
Watts
Tj, TsTG -55 to +175
°C
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above
TA=25˚C per Fig 2.
2. 8.3ms single half sine-wave , or equivalent square wave, Duty
cycle = 4 pulses per minutes maximum.
Mechanical Specifications:
Weight:
Case:
Mounting Position:
Polarity:
Terminal:
0.012ounce, 0.3 gram
JEDEC DO-41 Molded Plastic over
passivated junction
Any
Color band denotes cathode except
Bipolar
Plated Axial leads, solderable per
MIL-STD-750, Method 2026
282
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
400W Axial Leaded Transient Voltage Supressors
RoHS
P4KE Series
Part
Number
(Bi)
Reverse
Stand off
Voltage
V
RWM
(Volts)
5.80
6.40
7.02
7.78
8.55
9.40
10.20
11.10
12.80
13.60
15.30
17.10
18.80
20.50
23.10
25.60
28.20
30.80
33.30
36.80
40.20
43.60
47.80
53.00
58.10
64.10
70.10
77.80
85.50
94.00
102.00
111.00
128.00
136.00
145.00
154.00
171.00
185.00
214.00
256.00
300.00
342.00
376.00
408.00
434.00
450.00
459.00
467.00
Breakdown
Voltage
V
BR
(Volts)
MIN.@
I
T
MIN
MAX
6.45
7.14
7.13
7.88
7.79
8.61
8.65
9.55
9.50
10.50
10.50
11.60
11.40
12.60
12.40
13.70
14.30
15.80
15.20
16.80
17.10
18.90
19.00
21.00
20.90
23.10
22.80
25.20
25.70
28.40
28.50
31.50
31.40
34.70
34.20
37.80
37.10
41.00
40.90
45.20
44.70
49.40
48.50
53.60
53.20
58.80
58.90
65.10
64.60
71.40
71.30
78.80
77.90
86.10
86.50
95.50
95.00
105.00
105.00 116.00
114.00 126.00
124.00 137.00
143.00 158.00
152.00 168.00
162.00 179.00
171.00 189.00
190.00 210.00
209.00 231.00
237.00 263.00
285.00 315.00
332.00 368.00
380.00 420.00
418.00 462.00
456.00 504.00
485.00 535.00
503.50 556.50
513.00 567.00
522.50 577.50
Test
Current
I
T
(mA)
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
602.0
658.0
698.0
725.0
740.0
760.0
Maximum
Peak Pulse
Current
I
PP
(A)
39.00
36.30
33.90
30.60
28.30
26.30
24.60
22.50
19.30
18.20
16.10
14.80
13.40
12.30
10.90
9.90
9.00
8.20
7.60
6.90
6.30
5.80
5.30
4.80
4.50
4.00
3.60
3.30
3.00
2.70
2.50
2.30
2.00
1.90
1.80
1.70
1.50
1.30
1.20
1.00
0.85
0.75
0.68
0.61
0.57
0.55
0.54
0.52
Maximum
Reverse
Leakage
I
R
@ V
RWM
(µA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
®
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
(Uni)
P4KE6.8A
P4KE7.5A
P4KE8.2A
P4KE9.1A
P4KE10A
P4KE11A
P4KE12A
P4KE13A
P4KE15A
P4KE16A
P4KE18A
P4KE20A
P4KE22A
P4KE24A
P4KE27A
P4KE30A
P4KE33A
P4KE36A
P4KE39A
P4KE43A
P4KE47A
P4KE51A
P4KE56A
P4KE62A
P4KE68A
P4KE75A
P4KE82A
P4KE91A
P4KE100A
P4KE110A
P4KE120A
P4KE130A
P4KE150A
P4KE160A
P4KE170A
P4KE180A
P4KE200A
P4KE220A
P4KE250A
P4KE300A
P4KE350A
P4KE400A
P4KE440A
P4KE480A
P4KE510A
P4KE530A
P4KE540A
P4KE550A
P4KE6.8CA
P4KE7.5CA
P4KE8.2CA
P4KE9.1CA
P4KE10CA
P4KE11CA
P4KE12CA
P4KE13CA
P4KE15CA
P4KE16CA
P4KE18CA
P4KE20CA
P4KE22CA
P4KE24CA
P4KE27CA
P4KE30CA
P4KE33CA
P4KE36CA
P4KE39CA
P4KE43CA
P4KE47CA
P4KE51CA
P4KE56CA
P4KE62CA
P4KE68CA
P4KE75CA
P4KE82CA
P4KE91CA
P4KE100CA
P4KE110CA
P4KE120CA
P4KE130CA
P4KE150CA
P4KE160CA
P4KE170CA
P4KE180CA
P4KE200CA
P4KE220CA
P4KE250CA
P4KE300CA
P4KE350CA
P4KE400CA
P4KE440CA
P4KE480CA
P4KE510CA
P4KE530CA
P4KE540CA
P4KE550CA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
6
SILICON DIODE
ARRAYS
283
For bidirectional type having Vrwm of 10 volts and less, the IR limit is double.
For parts without A , the VBR is ± 10%
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
400W Axial Leaded Transient Voltage Supressors
RoHS
P4KE Series
®
Ratings and Characteristic Curves TA=25˚C unless otherwise noted
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
100
PPPM- Peak Pulse Power (KW)
100
75
10
50
1
25
0.1
0.1µs
0
0
25
50
75
100 125 150 175 200
TA- Ambient Temperature (˚C)
1.0µs
10µs
100µs
1.0ms
10ms
td- Pulse Width (sec.)
Fig. 1 Peak Pulse Power Rating
150
Fig. 2 Pulse Derating Curve
10000
CJ-Junction Capacitance (pF)
TJ=25˚C
f=1.0MHZ
Vsig=50mVp-p
IPPM- Peak Pulse Current, % I RSM
tr=10µsec
100
Peak Value
IPPM
Half Value IPPM
2
TJ=25˚C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
Measured at
Zero Bias
1000
50
10/1000µsec. Waveform
as defined by R.E.A
100
10
1.0
td
0
0
Measured at
Stand-Off
Voltage, VWM
1.0
2.0
T - Time(ms)
3.0
4.0
5
10
100
200
VWM-Reverse Stand-Off Voltage (V)
Fig. 3 Pulse Waveform
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
Fig. 4- Typ-Junction Capacitance Uni-Directional
200
IPSM-Peak Forward Surge Current (A)
TJ=TJ MAX
8.3 Single Half Sine-Wave
(JEDEC Method)
1.00
60Hz resistive or
inductive load
0.75
.375" (9.5mm)
Lead Lengths
100
0.50
50
0.25
0
0
1.6x1.6x.040"
(40x40x1mm)
25
50
75
100 125 150 175 200
10
1
5
10
100
TA- Ambient Temperature (˚C)
Number of Cycles at 60Hz
Fig. 5 steady Pulse Derating Curve
100
10
PPPM- Peak Pulse Power (KW)
tp-Instantanious
Reverse
Leakage Current (µA)
Fig. 6- Maximum Non-Repetitive Peak
Forward Surge Uni-Directional Only
100
1.0
10
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
1
0.001
0.01
0.1
1
10
100 1000
CVRR- Breakdown Voltage (V)
td- Pulse Duration (sec.)
Fig. 7 - Typical Reverse Leakage Characteristics
284
Fig. 8 Typ. Transient Thermal Impedance
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
400W Axial Leaded Transient Voltage Supressors
RoHS
P4KE Series
DO-204AL
(DO-41 Plastic)
®
Package Outline Dimensions
1.0 (25.4)
MIN.
6
SILICON DIODE
ARRAYS
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.2)
0.160(4.1)
0.034(0.86)
0.028(0.71)
DIA.
1.0 (25.4)
MIN.
All dimensions in inches and (millimeters)
w w w. l i t t e l f u s e . c o m
285
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