P4KE Series
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-204AL (DO-41 Plastic)
ded ge
ten Ran
Ex e
Features
ltag
Vo
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 440V
Peak Pulse Power
400W
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 400W peak pulse power capabililty on 10/1000µs wave-
form, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Mechanical Data
0.205 (5.2)
0.160 (4.1)
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265°C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440
(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
T
J
, T
STG
Limit
400
See Next Table
1.0
40
3.5/5.0
60
100
–55 to +175
Unit
W
A
W
A
V
°C/W
°C/W
°C
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current wih a 10/1000µs waveform
(1)
Steady state power dissipation
at T
L
= 75°C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms
single half sine-wave unidirectional only
(3)
Maximum instantaneous forward voltage
at 25A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typ. thermal resistance junction-to-ambient, L
Lead
= 10mm
Operating junction and storage temperature range
Notes:
(1)
(2)
(3)
(4)
Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
V
F
= 3.5V for P4KE220(A) & below; V
F
= 5.0V for P4KE250(A) & above
Document Number 88365
08-Jul-03
www.vishay.com
1
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Device Type
MIN
MAX
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(3)
(µA)
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
Maximum
Temperature
Coefficient
of V
(BR)
(% / °C)
P4KE6.8
P4KE6.8A
P4KE7.5
P4KE7.5A
P4KE8.2
P4KE8.2A
P4KE9.1
P4KE9.1A
P4KE10
P4KE10A
P4KE11
P4KE11A
P4KE12
P4KE12A
P4KE13
P4KE13A
P4KE15
P4KE15A
P4KE16
P4KE16A
P4KE18
P4KE18A
P4KE20
P4KE20A
P4KE22
P4KE22A
P4KE24
P4KE24A
P4KE27
P4KE27A
P4KE30
P4KE30A
P4KE33
P4KE33A
P4KE36
P4KE36A
P4KE39
P4KE39A
P4KE43
P4KE43A
P4KE47
P4KE47A
P4KE51
P4KE51A
P4KE56
P4KE56A
P4KE62
P4KE62A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
5.9
6.2
5.4
5.7
5.0
5.2
4.5
4.7
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
0.057
0.057
0.061
0.061
0.065
0.06
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
www.vishay.com
2
Document Number 88365
08-Jul-03
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(Con’t.)
Ratings at 25°C ambient temperature unless otherwise specified.
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Device Type
MIN
MAX
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(3)
(µA)
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
Maximum
Temperature
Coefficient
of V
(BR)
(% / °C)
P4KE68
P4KE68A
P4KE75
P4KE75A
P4KE82
P4KE82A
P4KE91
P4KE91A
P4KE100
P4KE100A
P4KE110
P4KE110A
P4KE120
P4KE120A
P4KE130
P4KE130A
P4KE150
P4KE150A
P4KE160
P4KE160A
P4KE170
P4KE170A
P4KE180
P4KE180A
P4KE200
P4KE200A
P4KE220
P4KE220A
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE440
P4KE440A
P4KE480
P4KE480A
P4KE510
P4KE510A
P4KE540
P4KE540A
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
4.1
4.3
3.7
3.9
3.4
3.5
3.1
3.2
2.8
2.9
2.5
2.6
2.3
2.4
2.1
2.2
1.9
1.9
1.7
1.8
1.6
1.7
1.6
1.6
1.4
1.5
1.2
1.2
1.1
1.2
0.93
1.0
0.79
0.83
0.70
0.73
0.63
0.66
0.58
0.61
0.55
0.57
0.52
0.54
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) For bidirectional types having V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88365
08-Jul-03
www.vishay.com
3
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
-- Peak Pulse Power (kW)
100
Fig. 2 – Pulse Derating Curve
100
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage, %
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
75
10
50
1
25
0.1
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
25
50
75
100
125
150
175
200
td -- Pulse Width (sec.)
T
A
-- Ambient Temperature (°C)
Fig. 3 -- Pulse Waveform
150
Fig. 4 – Typ. Junction Capacitance Uni-Directional
10,000
I
PPM
-- Peak Pulse Current,
% I
RSM
100
Peak Value
I
PPM
Half Value – I
PPM
2
C
J
-- Junction Capacitance
tr = 10µsec.
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at Zero Bias
1,000
50
10/1000µsec. Waveform
as defined by R.E.A.
td
100
Measured at
Stand-Off
Voltage, V
WM
0
0
1.0
2.0
3.0
4.0
10
1.0
t -- Time (ms)
V
(BR)
-- Breakdown Voltage (V)
10
100
200
Fig. 5 – Steady State Power Derating Curve
PM
(AV)
, Steady State Power
Dissipation (W)
1.00
L = 0.375" (9.5mm)
Lead Lengths
0.75
60 HZ Resistive or
Inductive Load
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
200
I
FSM
-- Peak Forward
Surge Current (A)
100
50
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
0
25
50
75
100
125
150
175
200
1
5
10
50
100
T
L
-- Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 7 – Typical Reverse Leakage Characteristics
Transient Thermal Impedance
(°C/W)
100
Fig. 8 – Typ. Transient Thermal Impedance
100
I
D
-- Instantaneous Reverse
Leakage Current (µA)
10
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25°C
1
10
0.1
0.01
0
100
200
300
400
500
600
1
0.001
0.01
0.1
1
10
100
1000
V
(BR)
-- Breakdown Voltage (V)
www.vishay.com
4
t
p
-- Pulse Duration (sec)
Document Number 88365
08-Jul-03
FPGA/CPLD
