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P4SMA8.2CAHR3G

TVS DIODE 7.02V 12.1V DO214AC

器件类别:电路保护   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
类型
齐纳
双向通道
1
电压 - 反向关态(典型值)
7.02V
电压 - 击穿(最小值)
7.79V
电压 - 箝位(最大值)@ Ipp
12.1V
电流 - 峰值脉冲(10/1000µs)
34A
功率 - 峰值脉冲
400W
电源线路保护
应用
汽车级
工作温度
-55°C ~ 150°C(TJ)
安装类型
表面贴装
封装/外壳
DO-214AC,SMA
供应商器件封装
DO-214AC(SMA)
文档预览
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
400W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
Low profile package
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Typical I
R
less than 1μA above 10V
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PPM
t
p
= 10/1000 μs waveform
T
J MAX
Package
Configuration
VALUE
5.5 - 171
6.12 - 210
400
150
UNIT
V
V
W
°C
DO-214AC (SMA)
Single
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.06g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
SYMBOL
P
PK
I
FSM
V
F
T
J
VALUE
400
40
3.5
-55 to +150
-55 to +150
UNIT
W
A
V
°C
°C
Storage temperature range
T
STG
Note:
1. Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A
2. Electrical characteristics apply in both directions
1
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
voltage
Part number
Marking
code
V
BR
@I
T(1)
(V)
Min.
Max.
Working
Test
stand-off
current
voltage
I
T
(mA)
V
WM
(V)
leakage current
I
R
@V
WM(1)
(µA)
Maximum reverse
Maximum peak
impulse current
I
PPM
(A)
t
p
=10/1000 μs
Maximum
clamping
voltage
V
C
@I
PPM
(V)
t
p
=10/1000 μ
s
Maximum
Temperature
Coefficient
of VBR
(%/°C)
P4SMA6.8
P4SMA6.8A
P4SMA7.5
P4SMA7.5A
P4SMA8.2
P4SMA8.2A
P4SMA9.1
P4SMA9.1A
P4SMA10
P4SMA10A
P4SMA11
P4SMA11A
P4SMA12
P4SMA12A
P4SMA13
P4SMA13A
P4SMA15
P4SMA15A
P4SMA16
P4SMA16A
P4SMA18
P4SMA18A
P4SMA20
P4SMA20A
P4SMA22
P4SMA22A
P4SMA24
P4SMA24A
P4SMA27
P4SMA27A
P4SMA30
P4SMA30A
P4SMA33
P4SMA33A
P4SMA36
P4SMA36A
P4SMA39
P4SMA39A
P4SMA43
P4SMA43A
P4SMA47
P4SMA47A
P4SMA51
P4SMA51A
P4SMA56
P4SMA56A
P4SMA62
P4SMA62A
ADJ
AEJ
AFJ
AGJ
AHJ
AKJ
ALJ
AMJ
ANJ
APJ
AQJ
ARJ
ASJ
ATJ
AUJ
AVJ
AWJ
AXJ
AYJ
AZJ
BDJ
BEJ
BFJ
BGJ
BHJ
BKJ
BLJ
BMJ
BNJ
BPJ
BQJ
BRJ
BSJ
BTJ
BUJ
BVJ
BWJ
BXJ
BYJ
BZJ
CDJ
CEJ
CFJ
CGJ
CHJ
CKJ
CLJ
CMJ
6.12
6.46
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
35.10
37.10
38.70
40.90
42.30
44.70
45.90
48.50
50.40
53.20
55.8
58.9
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.50
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
42.90
41.00
47.30
45.20
51.70
49.40
56.10
53.60
61.60
58.80
68.2
65.1
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
1000
1000
500
500
200
200
50
50
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
38.0
40.0
35.0
37.0
33.0
34.0
30.0
31.0
28.0
29.0
26.0
27.0
24.0
25.0
22.0
23.0
19.0
20.0
17.8
18.6
16.0
16.5
14.0
15.0
13.0
13.7
12.0
12.6
10.7
11.0
9.6
10.0
8.8
9.0
8.0
8.4
7.4
7.7
6.7
7.0
6.2
6.4
5.7
6.0
5.2
5.4
4.7
5.0
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
2
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Part number
Marking
code
voltage
V
BR
@I
T
(V)
Uni
Uni
Min.
Max.
(1)
Working
Test
stand-off
current
voltage
I
T
(mA)
V
WM
(V)
leakage current
I
R
@V
WM
(1)
Maximum
Maximum reverse
Maximum peak
clamping
impulse current
voltage
I
PPM
(A)
(Note 5)
V
C
@I
PPM
(V)
(Note 5)
Maximum
Temperatur
e
Coefficient
of VBR
(%/°C)
(µA)
P4SMA68
CNJ
61.2 74.8
1.0
55.1
1
P4SMA68A
CPJ
64.6 71.4
1.0
58.1
1
P4SMA75
CQJ
67.5 82.5
1.0
60.7
1
P4SMA75A
CRJ
71.3 78.8
1.0
64.1
1
P4SMA82
CSJ
73.8 90.2
1.0
66.4
1
P4SMA82A
CTJ
77.9 86.1
1.0
70.1
1
P4SMA91
CUJ
81.9 100
1.0
73.7
1
P4SMA91A
CVJ
86.5 95.5
1.0
77.8
1
P4SMA100
CWJ
90
110
1.0
81.0
1
P4SMA100A
CXJ
95
105
1.0
85.5
1
P4SMA110
CYJ
99
121
1.0
89.2
1
P4SMA110A
CZJ
105
116
1.0
94.0
1
P4SMA120
RDJ
108
132
1.0
97.2
1
P4SMA120A
REJ
114
126
1.0
102
1
P4SMA130
RFJ
117
143
1.0
105
1
P4SMA130A
RGJ
124
137
1.0
111
1
P4SMA150
RHJ
135
165
1.0
121
1
P4SMA150A
RKJ
143
158
1.0
128
1
P4SMA160
RLJ
144
176
1.0
130
1
P4SMA160A
RMJ
152
168
1.0
136
1
P4SMA170
RNJ
153
187
1.0
138
1
P4SMA170A
RPJ
162
179
1.0
145
1
P4SMA180
RQJ
162
198
1.0
146
1
P4SMA180A
RRJ
171
189
1.0
154
1
P4SMA200
RSJ
180
220
1.0
162
1
P4SMA200A
RTJ
190
210
1.0
171
1
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.51
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
3
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R3
R2
M2
P4SMAxxxx
(Note 1)
H
F3
F2
F4
E3
E2
Note :
1. "xxxx" defines voltage from 6.8V (P4SMA6.8) to 200V (P4SMA200A)
*: Optional available.
G
PACKING CODE
SUFFIX (*)
PACKAGE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
Clip SMA
Clip SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
P4SMA200AHR3G
PART NO.
P4SMA200A
PART NO.
SUFFIX
H
PACKING
CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
4
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
) A
DERATING IN PERCENTAGE (%)
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
Fig.2 Pulse Derating Curve
P
PPM
, PEAK PULSE POWER, KW
100
75
50
1
25
0.1
0.1
1
10
100
1000
tp, PULSE WIDTH, (μs)
10000
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE
(
°
C)
Fig.3 Claming Power Pulse Waveform
Fig.4 Maximum Non-repetitive Forward Surge
Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
40
140
120
PEAK PULSE CURRENT (%)
100
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100%
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
10/1000μs, waveform
td
Half value-I
PPM
/2
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version: Q1705
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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