NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
N-Channel
P-Channel
30
-30
R
DS(ON)
65mΩ
150mΩ
I
D
4A
-3A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
Junction & Storage Temperature Range
Lead Temperature ( /
16
” from case for 10 sec.)
1
SYMBOL
V
DS
V
GS
N-Channel P-Channel
30
±20
4
3
-30
±20
-3
-2
-10
2
1.3
UNITS
V
V
T
C
= 25 °C
T
C
= 70 °C
I
D
I
DM
A
10
T
C
= 25 °C
T
C
= 70 °C
P
D
T
j
, T
stg
T
L
W
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
2
SYMBOL
R
θJA
TYPICAL
MAXIMUM
110
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle
≤
1%
1
Mar-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
ELECTRICAL CHARACTERISTICS (T
C
= 25
°C,
Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
V
GS
= 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= V
GS
, I
D
= 250µA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 0V, V
GS
= ±20V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
0.9
-0.9
1.5
-1.5
2.5
-2.5
±100
±100
1
-1
µA
V
MIN
TYP
MAX
UNIT
nA
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C N-Ch
V
DS
= -20V, V
GS
= 0V, T
J
= 55 °C
V
DS
= 5V, V
GS
= 10V
V
DS
=-5V, V
GS
= -10V
V
GS
= 4.5V, I
D
= 3A
V
GS
= -4.5V, I
D
= -2A
P-Ch
10
-10
On-State Drain Current
1
I
D(ON)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
-10
72
170
48
100
6
3
120
250
A
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 4A
V
GS
= -10V, I
D
= -3A
65
150
mΩ
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 3A
V
DS
= -10V, I
D
= -2A
DYNAMIC
S
Total Gate Charge
2
Q
g
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 3A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
5.5
0.8
1.2
1.0
0.9
7.5
6.6
Gate-Source Charge
2
Q
gs
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
nC
Gate-Drain Charge
2
Q
gd
I
D
= -2A
2
Mar-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
Turn-On Delay Time
2
t
d(on)
N-Channel
V
DS
= 15V, R
L
= 15Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
8
12
11
12
14
7
8
11
12
18
18
18
21
11
12
nS
Rise Time
2
t
r
I
D
≅
1A, V
GS
= 10V, R
GEN
= 6Ω
P-Channel
V
DS
= -15V, R
L
= 15Ω
Turn-Off Delay Time
2
t
d(off)
Fall Time
2
t
f
N-Ch
P-Ch
I
D
≅
-1A, V
GS
= -10V, R
GEN
= 6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°C)
Forward Voltage
1
I
F
= 0.9A, V
GS
= 0V
V
SD
I
F
= -0.9A, V
GS
= 0V
t
rr
I
F
= 0.9A, dl
F
/dt = 100A /
µS
I
F
= -0.9A, dl
F
/dt = 100A /
µS
N-Ch
P-Ch
N-Ch
P-Ch
40
40
1.2
-1.2
80
80
V
Reverse Recovery Time
nS
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THIS PRODUCT MARKED WITH “50YWW”
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
50YWW
Marking Description:
5 - N+P MOSFET
0 - Serial Number
Y - Year
W - Week
3
Mar-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
N-CHANNEL
4
Mar-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
5
Mar-18-2005
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