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P6KE160A

ESD Suppressors / TVS Diodes 600 Watt TVS

器件类别:分立半导体    二极管   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
DO-15
包装说明
O-PALF-W2
针数
2
制造商包装代码
AXIAL LEADED, JEDEC DO204, VARIATION AC
Reach Compliance Code
compliant
ECCN代码
EAR99
最大击穿电压
168 V
最小击穿电压
152 V
击穿电压标称值
160 V
外壳连接
ISOLATED
最大钳位电压
219 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-15
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
最大重复峰值反向电压
136 V
表面贴装
NO
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P6KE6V8(C)A - P6KE440(C)A — 600 W Transient Voltage Suppressors
June 2013
P6KE6V8(C)A - P6KE440(C)A
600 W Transient Voltage Suppressors
Features
• Glass-Passivated Junction
• 600 W Peak Pulse Power Capability at 1.0 ms
• Excellent Clamping Capability
• Low Incremental Surge Resistance
• Fast Response Time; Typically
< 1.0 ps from 0 V to BV for
Uni-directional and 5.0 ns for Bi-directional
• Typical I
R
< 1.0 mA Above 10 V
DO-15
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY. NO
Applications
• Devices for Bipolar Applications
• Bi-directional Types Use CA Suffix
• Electrical Characteristics Apply in Both Directions
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
PPM
I
PPM
P
D
I
FSM
T
stg
T
J
Note:
Peak Pulse Current
Parameter
Peak Pulse Power Dissipation at t
P
= 1 ms
Power Dissipation
0.375-inch Lead Length at T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)
(1)
Storage Temperature Range
Operating Junction Temperature
Value
600
see table
5.0
100
-65 to +175
175
Units
W
A
W
A
°C
°C
1. Measured on 8.3 ms single half-sine wave; duty cycle = 4 pulses per minute maximum.
© 2002 Fairchild Semiconductor Corporation
P6KE6V8(C)A - P6KE440(C)A Rev. 1.2.0
1
www.fairchildsemi.com
P6KE6V8(C)A - P6KE440(C)A — 600 W Transient Voltage Suppressors
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Uni-directional
Bi-directional (C)
Device
Reverse
Stand-off Voltage
V
RWM
(V)
Breakdown
Voltage
V
BR
(V)
Min.
Test
Current
I
T
(mA)
Clamping
Peak Pulse
Voltage
Current
@I
PPM
V
C
(V)
I
PPM
(A)
Reverse
Leakage
V
RWM
I
R
(μA)
(2)
Temperature
Coefficient
V
BR
(%/
°C)
P6KE6V8(C)A
P6KE7V5(C)A
P6KE8V2(C)A
P6KE9V1(C)A
P6KE10(C)A
P6KE11(C)A
P6KE12(C)A
P6KE13(C)A
P6KE15(C)A
P6KE16(C)A
P6KE18(C)A
P6KE20(C)A
P6KE22(C)A
P6KE24(C)A
P6KE27(C)A
P6KE30(C)A
P6KE33(C)A
P6KE36(C)A
P6KE39(C)A
P6KE43(C)A
P6KE47(C)A
P6KE51(C)A
P6KE56(C)A
P6KE62(C)A
P6KE68(C)A
P6KE75(C)A
P6KE82(C)A
P6KE91(C)A
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
Max.
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
57.1
53.1
50.0
45.0
41.0
38.0
36.0
33.0
28.0
27.0
24.0
22.0
20.0
18.1
16.0
14.5
13.2
12.0
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
© 2002 Fairchild Semiconductor Corporation
P6KE6V8(C)A - P6KE440(C)A Rev. 1.2.0
2
www.fairchildsemi.com
P6KE6V8(C)A - P6KE440(C)A — 600 W Transient Voltage Suppressors
Electrical Characteristics
(continued)
Values are at T
A
= 25°C unless otherwise noted.
Uni-directional
Bi-directional (C)
Device
Reverse
Stand-off Voltage
V
RWM
(V)
Breakdown
Voltage
V
BR
(V)
Min.
Test
Current
I
T
(mA)
Clamping
Peak Pulse
Voltage
Current
@I
PPM
V
C
(V)
I
PPM
(A)
Reverse
Leakage
V
RWM
I
R
(μA)
(2)
Temperature
Coefficient
V
BR
(%/
°C)
P6KE100(C)A
P6KE110(C)A
P6KE120(C)A
P6KE130(C)A
P6KE150(C)A
P6KE160(C)A
P6KE170(C)A
P6KE180(C)A
P6KE200(C)A
P6KE220(C)A
P6KE250(C)A
P6KE300(C)A
P6KE350(C)A
P6KE400(C)A
P6KE440(C)A
Note:
85.5
94.0
102.0
111.0
128.0
136.0
145.0
154.0
171.0
185.0
214.0
256.0
300.0
342.0
376.0
95.0
105.0
114.0
124.0
143.0
152.0
162.0
171.0
190.0
209.0
237.0
285.0
332.0
380.0
418.0
Max.
105.0
116.0
126.0
137.0
158.0
168.0
179.0
189.0
210.0
231.0
263.0
315.0
368.0
420.0
462.0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
602.0
4.4
4.0
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.9
1.8
1.5
1.3
1.1
1.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
2. For bi-directional parts with V
RWM
< 10 V, the I
R
maximum limit is doubled.
© 2002 Fairchild Semiconductor Corporation
P6KE6V8(C)A - P6KE440(C)A Rev. 1.2.0
3
www.fairchildsemi.com
P6KE6V8(C)A - P6KE440(C)A — 600 W Transient Voltage Suppressors
Typical Performance Characteristics
100
100
T
A
= 25
º
C
75
Pulse Power [%]
Pulse Power [kW]
10
50
1
25
0.1
0.0001
0
0.001
0.01
0.1
Pulse Width [ms]
1
10
0
25
50
75
100 125 150
Ambient Temperature [ºC]
175
200
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
150
tf = 10μsec
μ
Total Capacitance, C
T
[pF]
Peak Pulse Current [%]
100
Peak Value
Ippm
T
A
= 25
º
C
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
6000
4000
2000
1000
500
200
100
50
20
Measured at
Stand-Off
Voltage (V mw)
T
A
= 25
º
C
f = 1.0 MHz
Visg = 50m Vp-p
Measured at
Zero Bias
Half Value-Ipp
2
50
10/1000μsec Waveform
μ
as Defined by R.E.A.
td
0
e-kt
0
1
2
Time [ms]
3
4
10
1
5
10
50
Reverse Voltage, V
R
[V]
100
200
Figure 3. Pulse Waveform
Figure 4. Total Capacitance - Uni-directional
Peak Forward Surge Current, I
FSM
[A]
5
200
T
A
= T
A
max
8.3ms Single Half Sine-Wave
JEDEC Method
Power Dissipation [W]
3.75
100
2.5
50
1.25
20
0
0
25
50
75
100 125 150
Lead Temperature [ºC]
175
200
10
1
2
Figure 5. Steady-State Power Derating Curve
5
10
20
Number of Cycles at 60Hz
50
100
Figure 6. Non-Repetitive Surge Current
© 2002 Fairchild Semiconductor Corporation
P6KE6V8(C)A - P6KE440(C)A Rev. 1.2.0
4
www.fairchildsemi.com
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