P6KE6.8 thru P6KE540A
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Note:
• P6KE250 ~ P6KE540A and P6KE250C ~ P6KE440CA for
commercial grade only
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 440 V
600 W
5.0 W
100 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C or CA suffix
(e.g. P6KE440CA).
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 50 A for uni-directional only
Operating junction and storage temperature range
(3)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
600
See next table
5.0
100
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
(3) V
F
= 3.5 V for P6KE220(A) and below; V
F
= 5.0 V for P6KE250(A) and above
Document Number: 88369
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
BR
AT I
T (1)
(V)
MIN.
(+)
P6KE6.8
(+)
MAX.
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
MAXIMUM
REVERSE
LEAKAGE
AT V
WM (3)
I
D
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
PEAK
MAXIMUM
PULSE
CLAMPING
CURRENT VOLTAGE AT
I
PPM
V
C
(V)
I
PPM (2)
(A)
55.6
57.1
51.3
53.1
48.0
49.6
43.5
44.8
40.0
41.4
37.0
38.5
34.7
35.9
31.6
33.0
27.3
28.3
25.5
26.7
22.6
23.8
20.6
21.7
18.8
19.6
17.3
18.1
15.3
16.0
13.8
14.5
12.6
13.1
11.5
12.0
10.6
11.1
9.7
10.1
8.8
9.3
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
BR
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
P6KE6.8A
(+)
P6KE7.5
(+)
P6KE7.5A
(+)
P6KE8.2
P6KE9.1
P6KE9.1A
P6KE10A
P6KE11
(+)
P6KE8.2A
(+)
(+)
(+)
P6KE10
(+)
(+)
(+)
P6KE11A
(+)
P6KE12
(+)
P6KE12A
P6KE13A
P6KE15
(+)
P6KE13
(+)
(+)
(+)
P6KE15A
(+)
P6KE16
(+)
(+)
P6KE16A
P6KE18
P6KE20
P6KE22
P6KE22A
(+)
P6KE18A
(+)
(+)
P6KE20A
(+)
(+)
(+)
P6KE24
(+)
P6KE24A
(+)
P6KE27
P6KE30
P6KE30A
(+)
P6KE27A
(+)
(+)
(+)
P6KE33
(+)
P6KE33A
(+)
(+)
(+)
(+)
P6KE36
P6KE36A
P6KE39
P6KE39A
P6KE43A
P6KE47
(+)
P6KE43
(+)
(+)
(+)
P6KE47A
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88369
Revision: 22-Oct-08
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
BR
AT I
T (1)
(V)
MIN.
(+)
P6KE51
(+)
P6KE51A
(+)
MAX.
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
MAXIMUM
REVERSE
LEAKAGE
AT V
WM (3)
I
D
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
PEAK
MAXIMUM
PULSE
CLAMPING
CURRENT VOLTAGE AT
I
PPM
V
C
(V)
I
PPM (2)
(A)
8.2
8.6
7.5
7.8
6.7
7.1
6.1
6.5
5.6
5.8
5.1
5.3
4.6
4.8
4.2
4.4
3.8
3.9
3.5
3.6
3.2
3.4
2.8
2.9
2.6
2.7
2.5
2.6
2.3
2.4
2.1
2.2
1.7
1.8
1.7
1.7
1.4
1.4
1.2
1.2
1.0
1.1
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
BR
(%/°C)
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
P6KE56
(+)
P6KE56A
(+)
P6KE62
(+)
(+)
(+)
(+)
P6KE62A
P6KE68
P6KE68A
P6KE75
(+)
P6KE75A
(+)
P6KE82
(+)
P6KE82A
(+)
P6KE91
(+)
P6KE91A
(+)
(+)
P6KE100
P6KE100A
P6KE110A
(+)
P6KE110
(+)
(+)
P6KE120
(+)
P6KE120A
(+)
(+)
P6KE130
P6KE130A
P6KE150A
P6KE160A
P6KE170
P6KE180
P6KE180A
(+)
P6KE150
(+)
(+)
P6KE160
(+)
(+)
(+)
P6KE170A
(+)
(+)
(+)
P6KE200
(+)
P6KE200A
(+)
(+)
(+)
(+)
P6KE220
P6KE220A
P6KE250
P6KE250A
(+)
P6KE300
(+)
P6KE300A
(+)
P6KE350
(+)
P6KE350A
(+)
P6KE400
(+)
P6KE400A
Document Number: 88369
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
DEVICE TYPE
V
BR
AT I
T (1)
(V)
MIN.
(+)
P6KE440
(+)
P6KE440A
MAX.
484
462
528
504
561
535
594
567
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
356
376
389
408
413
434
437
459
MAXIMUM
REVERSE
LEAKAGE
AT V
WM (3)
I
D
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
PEAK
MAXIMUM
PULSE
CLAMPING
CURRENT VOLTAGE AT
I
PPM
V
C
(V)
I
PPM (2)
(A)
0.95
1.00
0.88
0.91
0.82
0.86
0.78
0.81
631
602
686
658
729
698
772
740
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
BR
(%/°C)
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
396
418
432
456
459
485
486
513
P6KE480
P6KE480A
P6KE510
P6KE510A
P6KE540
P6KE540A
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2ogm
(3) For bi-directional types with V
WM
of 10 V and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(+)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
SYMBOL
R
θJL
R
θJA
VALUE
20
75
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
P6KE6.8A-E3/54
P6KE6.8AHE3/54
(1)
Note:
(1) Automotive grade AEC-Q101 qualified
UNIT WEIGHT (g)
0.432
0.432
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
4000
4000
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88369
Revision: 22-Oct-08
P6KE6.8 thru P6KE540A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
6000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Measured at
Zero Bias
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1
100
Measured at Stand-Off
Voltage V
WM
0.1
0.1
µs
10
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
1.0
10
100
200
t
d
- Pulse
Width
(s)
V
BR
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
6
5
60 Hz
Resistive or
Inductive Load
75
P
D
- Power Dissipation (W)
4
3
L = 0.375" (9.5 mm)
Lead Lengths
50
2
1
25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Power Derating Curve
150
I
FSM -
Peak Forward Surge Current (A)
I
PPM
- Peak Pulse Current,
%
I
RSM
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
200
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
50
Uni-Directional Only
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Document Number: 88369
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
分立器件
