P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
600
3
100
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C/W
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Note 2: V
F
=3.5V on P6SMB6.8 - P6SMB91 and V
F
=5.0V on P6SMB100 - P6SMB220.
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A
2. Electrical characteristics apply in both directions
ORDERING INFORMATION
PART NO.
P6SMBxxxx
(Note 1)
PART NO.
SUFFIX
H
PACKING CODE
R5
R4
M4
G
PACKING CODE
SUFFIX
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note 1: "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
EXAMPLE
EXAMPLE
PART NO.
P6SMB20AHR5G
PART NO.
P6SMB20A
PART NO.
SUFFIX
H
PACKING CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: M1602
P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
120
PEAK PULSE CURRENT (%)
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
IFSM, PEAK FORWARD SURGE CURRENT (A)
tr=10μs
Peak value
I
PPM
8.3ms single half sine wave
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
V
R
=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
Measured at
stand-off
voltage,Vwm
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Version: M1602
P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
P6SMB6.8
P6SMB6.8A
P6SMB7.5
P6SMB7.5A
P6SMB8.2
P6SMB8.2A
P6SMB9.1
P6SMB9.1A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
P6SMB13
P6SMB13A
P6SMB15
P6SMB15A
P6SMB16
P6SMB16A
P6SMB18
P6SMB18A
P6SMB20
P6SMB20A
P6SMB22
P6SMB22A
P6SMB24
P6SMB24A
P6SMB27
P6SMB27A
P6SMB30
P6SMB30A
P6SMB33
P6SMB33A
P6SMB36
P6SMB36A
P6SMB39
P6SMB39A
P6SMB43
P6SMB43A
P6SMB47
P6SMB47A
P6SMB51
P6SMB51A
KDJ
KEJ
KFJ
KGJ
KHJ
KKJ
KLJ
KMJ
KNJ
KPJ
KQJ
KRJ
KSJ
KTJ
KUJ
KVJ
KWJ
KXJ
KYJ
KZJ
LDJ
LEJ
LFJ
LGJ
LHJ
LKJ
LLJ
LMJ
LNJ
LPJ
LQJ
LRJ
LSJ
LTJ
LUJ
LVJ
LWJ
LXJ
LYJ
LZJ
MDJ
MEJ
MFJ
MGJ
6.12
6.46
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
Maximum
@ V
WM
I
R
(μA)
1000
1000
500
500
200
200
50
50
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
58
60
53
55
50
52
45
47
42
43
38
40
36
37
33
34
28
29
26
28
23
25
21
22
19
20
18
19
16
16.8
14.0
15.0
13.0
13.8
12.0
12.6
11.1
11.6
10.0
10.6
9.2
9.7
8.5
8.9
Maximum
@ I
PPM
Vc (V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
Maximum
Coefficient
of V
BR
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
Device
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Version: M1602
P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
P6SMB56
P6SMB56A
P6SMB62
P6SMB62A
P6SMB68
P6SMB68A
P6SMB75
P6SMB75A
P6SMB82
P6SMB82A
P6SMB91
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
P6SMB220
P6SMB220A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
MHJ
MKJ
MLJ
MMJ
MNJ
MPJ
MQJ
MRJ
MSJ
MTJ
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
NUJ
NVJ
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
Max
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
Maximum
@ V
WM
I
R
(μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
7.8
8.1
7.0
7.4
6.4
6.8
5.8
6.1
5.3
5.5
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
Maximum
@ I
PPM
Vc (V)
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
342
328
Maximum
Coefficient
of V
BR
(%/°C)
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Device
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Version: M1602
P6SMB SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.95
4.25
3.48
1.99
0.90
5.10
0.10
0.15
Max
2.10
4.75
3.73
2.61
1.41
5.30
0.20
0.31
Unit (inch)
Min
0.077
0.167
0.137
0.078
0.035
0.201
0.004
0.006
Max
0.083
0.187
0.147
0.103
0.056
0.209
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Note: Cathode band for uni-directional products only
Version: M1602
