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P6SMBJ51C

ESD Suppressors / TVS Diodes 38.1Vso 42.3Vbr 8.9A

器件类别:分立半导体    二极管   

厂商名称:Littelfuse

厂商官网:http://www.littelfuse.com

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器件参数
参数名称
属性值
厂商名称
Littelfuse
包装说明
R-PDSO-C2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW INDUCTANCE, UL RECOGNIZED
最大击穿电压
56.1 V
最小击穿电压
45.9 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
BIDIRECTIONAL
认证状态
Not Qualified
表面贴装
YES
技术
AVALANCHE
端子形式
C BEND
端子位置
DUAL
文档预览
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
RoHS
P6SMBJ Series
®
FEATURES
RoHS
compliant
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low lead inductance
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 µmA above 10V
High Temperature soldering: 250˚C/10 seconds at terminals
LE
PARAMETER
MAXIMUM RATINGS AND CHARACTERISTICS
@25˚C AMBIENT TEMPERATURE (unless otherwise noted)
SYMBOL
PPPM
VALUE
Min
600
UNIT
Watts
Peak pulse power Dissipation on
10/1000µs waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000µs
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number:
E128662
SO
TE
IPPM
SEE TABLE 1 Amps
IPSM
100
Amps
Tj, TsTG -55 to +150
°C
Excellent clamping capability
O
ORDERING INFORMATION
P6SMBJ
CA
B
Voltage
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
266
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25˚C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
Mechanical Specifications:
Weight:
Case:
Mounting Position:
Polarity:
Terminal:
Standard Packaging:
0.003ounce, 0.093 gram
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Any
Color band denotes cathode except
Bidirectional
Solder Plated solderable per
MIL-STD-750, Method 2026
12mm tape (EIA STF RS-481)
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
RoHS
P6SMBJ Series
Part
Number
(Bi)
Device Marking
Code
Reverse
Stand off
Voltage
V
R
(Volts)
5.80
6.40
7.02
7.78
8.55
9.40
10.20
11.10
12.80
13.60
15.30
17.10
18.80
20.50
23.10
25.60
28.20
30.80
33.30
36.80
40.20
43.60
47.80
53.00
58.10
64.10
70.10
77.80
85.50
94.00
102.00
111.00
128.00
136.00
145.00
154.00
171.00
185.00
214.00
256.00
300.00
342.00
376.00
408.00
434.00
477.00
459.00
495.00
Breakdown
Voltage
V
BR
(Volts) @
I
T
MIN
6.45
7.13
7.79
8.65
9.50
10.50
11.40
12.40
14.30
15.20
17.10
19.00
20.90
22.80
25.70
28.50
31.40
34.20
37.10
40.90
44.70
48.50
53.20
58.90
64.60
71.30
77.90
86.50
95.00
105.00
114.00
124.00
143.00
152.00
162.00
171.00
190.00
209.00
237.00
285.00
332.00
380.00
418.00
456.00
485.00
503.50
513.00
522.50
MAX
7.14
7.88
8.61
9.55
10.50
11.60
12.60
13.70
15.80
16.80
18.90
21.00
23.10
25.20
28.40
31.50
34.70
37.80
41.00
45.20
49.40
53.60
58.80
65.10
71.40
78.80
86.10
95.50
105.00
116.00
126.00
137.00
158.00
168.00
179.00
189.00
210.00
231.00
263.00
315.00
368.00
420.00
462.00
504.00
535.00
556.50
567.00
577.50
Test
Current
I
T
(mA)
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
602.0
658.0
698.0
725.0
740.0
760.0
Maximum
Peak Pulse
Current
I
PP
(A)
58.1
54.0
50.4
45.5
42.1
39.1
36.5
33.5
28.8
27.1
24.2
22.0
19.9
18.4
16.3
14.7
13.3
12.2
11.3
10.3
9.4
8.7
7.9
7.2
6.6
5.9
5.4
4.9
4.5
4.0
3.7
3.4
2.9
2.8
2.6
2.5
2.2
1.9
1.8
1.5
1.3
1.1
1.0
0.9
0.9
0.8
0.8
0.8
Maximum
Reverse
Leakage
I
R
@ V
R
(µA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
®
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
(Uni)
UNI
P6SMBJ6.8A
P6SMBJ7.5A
P6SMBJ8.2A
P6SMBJ9.1A
P6SMBJ10A
P6SMBJ11A
P6SMBJ12A
P6SMBJ13A
P6SMBJ15A
P6SMBJ16A
P6SMBJ18A
P6SMBJ20A
P6SMBJ22A
P6SMBJ24A
P6SMBJ27A
P6SMBJ30A
P6SMBJ33A
P6SMBJ36A
P6SMBJ39A
P6SMBJ43A
P6SMBJ47A
P6SMBJ51A
P6SMBJ56A
P6SMBJ62A
P6SMBJ68A
P6SMBJ75A
P6SMBJ82A
P6SMBJ91A
P6SMBJ100A
P6SMBJ110A
P6SMBJ120A
P6SMBJ130A
P6SMBJ150A
P6SMBJ160A
P6SMBJ170A
P6SMBJ180A
P6SMBJ200A
P6SMBJ220A
P6SMBJ250A
P6SMBJ300A
P6SMBJ350A
P6SMBJ400A
P6SMBJ440A
P6SMBJ480A
P6SMBJ510A
P6SMBJ530A
P6SMBJ540A
P6SMBJ550A
P6SMBJ6.8CA
P6SMBJ7.5CA
P6SMBJ8.2CA
P6SMBJ9.1CA
P6SMBJ10CA
P6SMBJ11CA
P6SMBJ12CA
P6SMBJ13CA
P6SMBJ15CA
P6SMBJ16CA
P6SMBJ18CA
P6SMBJ20CA
P6SMBJ22CA
P6SMBJ24CA
P6SMBJ27CA
P6SMBJ30CA
P6SMBJ33CA
P6SMBJ36CA
P6SMBJ39CA
P6SMBJ43CA
P6SMBJ47CA
P6SMBJ51CA
P6SMBJ56CA
P6SMBJ62CA
P6SMBJ68CA
P6SMBJ75CA
P6SMBJ82CA
P6SMBJ91CA
P6SMBJ100CA
P6SMBJ110CA
P6SMBJ120CA
P6SMBJ130CA
P6SMBJ150CA
P6SMBJ160CA
P6SMBJ170CA
P6SMBJ180CA
P6SMBJ200CA
P6SMBJ220CA
P6SMBJ250CA
P6SMBJ300CA
P6SMBJ350CA
P6SMBJ400CA
P6SMBJ440CA
P6SMBJ480CA
P6SMBJ510CA
P6SMBJ530CA
P6SMBJ540CA
P6SMBJ550CA
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
400A
440A
480A
510A
530A
540A
550A
BI
6V8CA
7V5CA
8V2CA
9V1CA
10CA
11CA
12CA
13CA
15CA
16CA
18CA
20CA
22CA
24CA
27CA
30CA
33CA
36CA
39CA
43CA
47CA
51CA
56CA
62CA
68CA
75CA
82CA
91CA
100CA
110CA
120CA
130CA
150CA
160CA
170CA
180CA
200CA
220CA
250CA
300CA
350CA
400CA
440CA
480CA
510CA
530CA
540CA
550CA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
6
SILICON DIODE
ARRAYS
267
For bidirectional type having Vrwm of 10 volts and less, the IR limit is double.
For parts without A (VBR is ± 10%).
O
B
SO
LE
w w w. l i t t e l f u s e . c o m
TE
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
RoHS
100
PPPM- Peak Pulse Power (KW)
P6SMBJ Series
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
®
Ratings and Characteristic Curves TA=25˚C unless otherwise noted
100
75
10
50
25
1
0.1
0.1µs
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
0
1.0µs
10µs
100µs
1.0ms
10ms
0
td- Pulse Width (sec.)
150
IPPM- Peak Pulse Current, % I RSM
tr=10µsec
Peak Value
IPPM
Half Value IPPM
2
TJ=25˚C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
LE
6000
CJ-Junction Capacitance (pF)
Fig. 1 Peak Pulse Power Rating
100
SO
10
3.0
4.0
IPSM-Peak Forward Surge Current (A)
1000
50
100
10/1000µsec. Waveform
as defined by R.E.A
B
td
0
0
TE
25
50
75
VR, Measured at
Stand-Off
Voltage, VWM
Uni-Directional
Bi-Directional
100 125 150 175 200
TA- Ambient Temperature (˚C)
Fig. 2 Pulse Derating Curve
Measured at
Zero Bias
TJ=25˚C
f=1.0MHZ
Vsig=50mVp-p
O
1.0
2.0
1.0
10
100
200
VWM-Reverse Stand-Off Voltage (V)
Fig. 3 Pulse Waveform
100
Transient Thermal Impedance
(˚C/W)
Fig. 4- Typical Junction Capacitance
200
8.3 Single Half Sine-Wave
(JEDEC Method)
Undirectional Only
100
10
1.0
0.1
0.001
0.01
0.1
1
10
100
1000
10
1
10
Number of Cycles at 60Hz
100
tp- Pulse Duration(sec)
Fig. 5- Typ. Transient Thermal Impedance
268
Fig. 6- Maximum Non-Repetitive Peak
Forward Surge Current
w w w. l i t t e l f u s e . c o m
Silicon Avalanche Diodes
600W Surface Mount Transient Voltage Supressors
RoHS
P6SMBJ Series
®
Package Outline Dimensions and Pad Layout
2.16
2.74
2.16
TE
O
B
SO
LE
w w w. l i t t e l f u s e . c o m
2.26
6
Solder Pads
All dimensions in mm
269
SILICON DIODE
ARRAYS
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