NOT RECOMMENDED FOR NEW DESIGN
USE AP2125/2127
PAM3101
300mA HIGH PSRR LOW-DROPOUT CMOS LINEAR REGULATOR
Description
The PAM3101 series of positive voltage linear regulators feature low
quiescent current (65µA typ.) and low dropout voltage, making them
ideal for battery powered applications. Their high PSRR make them
useful in applications where AC noise on the input power supply must
be suppressed. Space-saving SOT-23, SOT-89, SC70 and
DFN1.6x1.6-6L packages are attractive for portable and handheld
applications. They have both thermal shutdown and current limit
features to prevernt device failure from extreme operating conditions.
They are stable with an output capacitor of 2.2µF or greater.
Pin Assignments
Features
Low Dropout Voltage: 180mV@300mA (V
O
= 3.3V)
Output Voltage Accuracy within ±2%
Supply Voltage Range: 2.5V to 5.5V
Quiescent Current: 65µA typ.
High PSRR: 70dB@1kHz
Excellent Line and Regulation
Fast Discharge
Current Limiting
Short Circuit Protection
Low Temperature Coefficient
Shutdown Current: 0.5µA
Thermal Shutdown
Space Saving Packages: SOT-23, SOT-89, SC70 and
DFN1.6x1.6
Pb-Free Packages
Applications
Cellular Phones
Bluetooth Earphones
Digital Cameras
Portable Electronics
WLANs
MP3 Players
PAM3101
Document number: DS36419 Rev. 3 - 3
1 of 25
www.diodes.com
May 2016
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE AP2125/2127
PAM3101
Typical Applications Circuit
Pin Configuration and Description
Package
Type
SOT23-3
Pin Number
1
2
VOUT
VOUT
GND
GND
GND
VIN
GND
GND
VOUT
GND
GND
NC
3
VIN
GND
VIN
EN
EN
VOUT
VIN
NC
GND
VOUT
EN
VIN
4
—
—
—
BYP
NC
—
—
EN
—
VIN
BYP
VOUT
5
—
—
—
VOUT
VOUT
—
—
VIN
—
—
VOUT
NC
6
—
—
—
—
—
—
—
—
—
—
—
GND
SOT23-5
SOT89-3
SOT89-5
SC-70-3L
SC70-4L
SC70-5L
DFN1.6x1.6-6L
GND
VIN
VOUT
VIN
VIN
GND
VOUT
VOUT
VIN
EN
VIN
EN
Pin Name
VIN
GND
VOUT
EN
BYP
NC
Function
Input
Ground
Output
Chip Enable (active high)
PAM3101BABXXX----EN default floating
Other part no----EN default pull high
Bypass Pin, need a 10nF capacitor connect to GND
No Connection
PAM3101
Document number: DS36419 Rev. 3 - 3
2 of 25
www.diodes.com
May 2016
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE AP2125/2127
PAM3101
Functional Block Diagram
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Input Voltage
Output Current
Output Pin Voltage
Lead Soldering Temperature
Storage Temperature
ESD Rating
Rating
6.0
300
GND -0.3 to V
IN
+0.3V
300, (5sec)
-65 to +150
Class B
Unit
V
mA
V
°
C
°
C
—
Recommended Operating Conditions
(@T
A
= +25° unless otherwise specified.)
C,
Parameter
Supply Voltage Range
Junction Temperature
Operation Temperature
Rating
2.5 to 5.5
-40 to +125
-40 to +85
Unit
V
°
C
PAM3101
Document number: DS36419 Rev. 3 - 3
3 of 25
www.diodes.com
May 2016
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE AP2125/2127
PAM3101
Thermal Information
Parameter
Symbol
Package
SOT23
Thermal Resistance Junction to Case)
θ
JC
SOT-89
SC70
DFN1.6x1.6
SOT23
Thermal Resistance (Junction to Ambient)
θ
JA
SOT-89
SC70
DFN1.6x1.6
SOT23
SOT-89
Internal Power Dissipation (@T
A
= +25°
C)
P
D
SC70
DFN1.6x1.6
Max
130
100
160
65
250
180
300
175
400
550
300
570
mW
°
C/W
Unit
Electrical Characteristics
(@T
A
= +25° V
CE1
= V
CE2
= V
IN
= V
O
+1V, C
IN
= 2.2µF, C
O
= 2.2µF, unless otherwise specified.)
C,
Parameter
Input Voltage
Output Voltage
Output Current
Symbol
V
IN
V
O
I
O
V
O
= 1.5V
Dropout Voltage
V
DROP
I
O
= 300mA
V
O
= 1.8V
2.5V ≤ V
O
< 3.3V
V
O
≥ 3.3V
Ground Current
Quiescent Current
Line Regulation
I
GND
I
Q
LNR
I
O
= 1mA to 300mA
I
O
= 0mA
I
O
= 1mA,
V
O
< 2V,
V
IN
= 2.8V to 3.8V
I
O
= 1mA, 2V ≤
V
O
< 3.3V,
V
IN
= V
O
+0.5V to V
O
+1V
I
O
= 1mA,
V
O
≥ 3.3V,
V
IN
= V
O
+0.5V to V
O
+1V
Load Regulation
Temperature Coefficient
Over Temperature Shutdown
Over Temperature Hysteresis
Power Supply Ripple Rejection
Output Noise
CE Input High Threshold
CE Input Low Threshold
Shutdown Current
Notes:
Test Conditions
—
I
O
= 1mA
Min
Note 1
-2
300
—
—
—
—
—
—
-0.15
-0.10
-0.4
-2
—
—
—
—
f = 100Hz
f = 1kHz
—
—
—
1.5
—
—
Typ
—
—
—
1150
850
370
180
70
65
0.10
0.03
0.2
1
30
40
150
30
70
65
50
—
—
0.01
Max
5.5
+2
Note 2
1400
1100
450
230
90
90
0.15
0.10
0.4
+2
60
—
—
—
—
—
—
—
0.3
1
Units
V
%
mA
mV
µA
µA
%/V
%
mV
ppm/°
C
°
C
°
C
dB
µV
RMS
V
V
µA
LDR
T
C
OTS
OTH
PSRR
V
N
V
TH
V
TL
I
SD
I
O
= 1mA to 300mA, V
O
≥ 2V
I
O
= 1mA to 300mA, V
O
< 2V
I
O
= 1mA
I
O
= 1mA
I
O
= 1mA
I
O
= 100mA
C
BYP
= 10nF
V
O
= 3.3V
f = 10Hz to 100kHz,
C
BYP
= 10nF
V
IN
= 2.5V to 5V
V
IN
= 2.5V to 5V
V
EN
= 0V
1. The minimym input voltage (V
IN(MIN
)
of the PAM3101 is determined by output voltage and dropout voltage. The minimum input voltage is defined as:
V
IN(MIN)
= V
O
+V
DROP
2. Output current is limited by P
D
, maximum I
O
= P
D
/(V
IN(MAX)
– V
O
).
PAM3101
Document number: DS36419 Rev. 3 - 3
4 of 25
www.diodes.com
May 2016
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE AP2125/2127
PAM3101
Typical Performance Characteristics
(@T
A
= +25° V
EN
= V
IN
, C
IN
= 1µF, C
O
= 2.2µF, C
BYP
= 10nF unless otherwise specified.)
C,
PAM3101
Document number: DS36419 Rev. 3 - 3
5 of 25
www.diodes.com
May 2016
© Diodes Incorporated
Microchip MCU
