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PBU606

6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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PBU601 - PBU607
6.0A BRIDGE RECTIFIER
Features
·
·
·
·
·
·
·
Diffused Junction
Low Forward Voltage Drop, High Current
Capability
Surge Overload Rating to 250A Peak
Ideal for Printed Circuit Board Applications
Case to Terminal Isolation Voltage 1500V
Plastic Material: UL Flammability
Classification Rating 94V-0
UL Listed Under Recognized Component
Index, File Number E95060
PBU
Dim
A
C
B
D
K
L
M
Min
22.70
3.80
4.20
1.70
10.30
4.50
4.80
25.40
16.80
6.60
4.70
1.20
Max
23.70
4.10
4.70
2.20
11.30
6.80
5.80
¾
19.30
17.80
7.10
5.20
1.30
A
B
C
D
E
Mechanical Data
·
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Weight: 8.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
-
E
G
N
~
~
+
H
J
K
G
H
P
L
M
N
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element)
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
@ I
F
= 3.0A
@ T
C
= 25°C
@ T
C
= 100°C
(Note 2)
(Note 1)
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
R
qJC
T
j,
T
STG
PBU
601
50
35
@ T
A
= 25°C unless otherwise specified
PBU
602
100
70
PBU
603
200
140
PBU
604
400
280
6.0
250
1.0
10
1.0
166
4.2
-65 to +150
PBU
605
600
420
PBU
606
800
560
PBU
607
1000
700
Unit
V
V
A
A
V
µA
mA
A
2
s
K/W
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Non-repetitive, for t > 1.0ms and t < 8.3ms.
DS21307 Rev. F-2
1 of 2
PBU601 - PBU607
6
5
4
3
2
1
Single Phase Half Wave
60 Hz Resistive or Inductive Load
100
I
F
, INSTANTANEOUS FWD CURRENT (A)
I
(AV)
, AVERAGE OUTPUT CURRENT (A)
10
1.0
0
20
40
60
80
100 120 140
T
C
, CASE TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
0.1
0.6
T
j
= 25ºC
Pulse Width = 300 ms
0.7
0.8
0.9 1.0
1.1 1.2 1.3
V
F
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
250
400
I
FSM
, PEAK FWD SURGE CURRENT (A)
200
150
100
50
8.3ms Single Half Sine-Wave
JEDEC Method
T
j
= 25ºC
f = 1MHz
C
j
, CAPACITANCE (pF)
100
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
10
0
1
10
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance Per Element
1
T
j
= 100ºC
1.0
0.1
T
j
= 25ºC
0.01
0
20
40
60
80
100 120 140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21307 Rev. F-2
2 of 2
PBU601 - PBU607
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参数对比
与PBU606相近的元器件有:PBU607、PBU605、PBU604、PBU603、PBU602、PBU601。描述及对比如下:
型号 PBU606 PBU607 PBU605 PBU604 PBU603 PBU602 PBU601
描述 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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