Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR1545CT, PBYR1545CTB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
a1
1
k 2
a2
3
I
O(AV)
= 15 A
V
F
≤
0.57 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR1545CT series is supplied in the SOT78 conventional leaded package.
The PBYR1545CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYR15
PBYR15
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
107 ˚C
square wave;
δ
= 0.5;
T
mb
≤
128 ˚C
square wave;
δ
= 0.5;
T
mb
≤
128 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
40CT
40CTB
40
40
40
15
15
135
150
1
150
175
45CT
45CTB
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 package.
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PBYR1545CT, PBYR1545CTB series
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
3
2
-
-
K/W
K/W
K/W
K/W
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage per diode
Reverse current per diode
Junction capacitance per
diode
CONDITIONS
I
F
= 7.5 A; T
j
= 125˚C
I
F
= 15 A; T
j
= 125˚C
I
F
= 15 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.44
0.63
0.62
0.22
18
270
0.57
0.72
0.84
1
25
-
V
V
V
mA
mA
pF
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1545CT, PBYR1545CTB series
8
7
6
5
Forward dissipation, PF (W)
Vo = 0.42 V
Rs = 0.02 Ohms
PBYR745
Tmb(max) (C)
D = 1.0
126
129
100
Reverse current, IR (mA)
PBYR1545CT
125 C
0.5
0.2
132
135
10
100 C
1
75 C
50 C
0.1
Tj = 25 C
4
3
0.1
I
t
p
D=
t
p
T
t
138
141
144
147
150
12
2
1
0
0
2
T
0.01
0
25
Reverse voltage, VR (V)
50
4
6
8
Average forward current, IF(AV) (A)
10
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W)
PBYR745
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
8
Tmb(max) / C
126
129
Cd / pF
1000
PBYR745
Vo = 0.42 V
7 Rs = 0.02 Ohms
6
5
4
3
2
1
0
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
2.8
4
2.2
1.9
a = 1.57
132
135
138
141
144
147
150
8
10
1
10
VR / V
100
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
PBYR1545CT
10
Transient thermal impedance, Zth j-mb (K/W)
40
1
30
typ
20
0.1
max
10
P
D
t
p
D=
t
p
T
t
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR1545CT
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYR1545CT, PBYR1545CTB series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
PBYR1545CT, PBYR1545CTB series
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
模拟电子
