PC4H520NIP0F
PC4H520NIP0F
Mini-flat Half-pitch Package
Darlington Phototransistor Output
High Collector-emitter Voltage
Photocoupler
■
Description
PC4H520NIP0F
contains a IRED optically coupled
to a phototransistor.
It is packaged in a 4-pin Mini-flat, Half pitch type.
Input-output isolation voltage(rms) is 2.5kV.
Collector-emitter voltage is 350V and CTR is MIN.
1000% at input current of 1mA.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC4H52)
2. Package resin : UL flammability grade (94V-0)
■
Applications
1. Modems
■
Features
1. 4-pin Mini-flat Half pitch package (Lead pitch :
1.27mm)
2. Double transfer mold package (Ideal for Flow
Soldering)
3. High collector-emitter voltage (V
CEO
: 350V)
4. Darlington phototransistor output (CTR : MIN.1000%
at I
F
=lmA,V
CE
=2V)
5. Isolation voltage between input and output (V
iso(rms)
:
2.5kV)
6. Lead-free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A02802EN
Date Jun. 30. 2005
© SHARP Corporation
PC4H520NIP0F
■
Internal Connection Diagram
1
4
1
3
4
2
3
5
Anode
Cathode
Emitter
Collector
■
Outline Dimensions
Primary side mark
SHARP mark "S"
Date code
4
(Unit : mm)
2.6
±0.3
1
2
±0.25
4H52
4.4
±0.2
3
1.27
5.3
±0.3
(1.7)
0.2
±0.05
2.0
±0.2
7.0
+0.2
−0.7
*( ) : Reference Dimensions
0.4
±0.1
Epoxy resin
Product mass : approx. 0.05g
Plating material : SnCu (Cu : TYP. 2%)
0.1
±0.1
0.5
+0.4
−0.2
Sheet No.: D2-A02802EN
2
PC4H520NIP0F
Date code (2 digit)
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
·
·
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
Mark
P
R
S
T
U
V
W
X
A
B
C
·
·
·
repeats in a 20 year cycle
Country of origin
Japan
Rank mark
There is no rank mark indicator.
Sheet No.: D2-A02802EN
3
PC4H520NIP0F
■
Absolute Maximum Ratings
Parameter
Symbol
Forward current
I
F
*2
Peak forward current
I
FM
Reverse voltage
V
R
*1
Power dissipation
P
Collector-emitter voltage V
CEO
Emitter-collector voltage V
ECO
I
C
Collector current
*1
Collector power dissipation
P
C
*1
Total power dissipation
P
tot
T
opr
Operating temperature
T
stg
Storage temperature
*3
Isolation voltage
V
iso (rms)
*4
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
50
mA
1
A
V
6
70
mW
V
350
0.1
V
120
mA
180
mW
210
mW
−40
to
+100
˚C
−55
to
+125
˚C
2.5
kV
260
˚C
*1 Mounted glass epoxy PCB (Size : 20mm×20mm×1.6mm)
*2 Pulse width≤100µs, Duty ratio : 0.001
*3 40 to 60%RH, AC for 1 minute, f=60Hz
*4 For 10s
■
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
V
F
I
R
Reverse current
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Current transfer ratio
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
Floating capacitance
C
f
Cut-off frequency
f
C
Rise time
t
r
Response time
Fall time
t
f
Conditions
I
F
=10mA
V
R
=4V
V=0, f=1kHz
V
CE
=200V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
F
=1mA,
V
CE
=2V
I
F
=20mA,
I
C
=100mA
DC500V, 40 to 60%RH
V=0, f=1MHz
V
CE
=2V,
I
C
=20mA,
R
L
=100Ω
−3dB
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=20mA,
R
L
=100Ω
MIN.
−
−
−
−
350
10
−
5×10
10
−
1
−
−
TYP.
1.2
−
30
−
−
40
−
1×10
11
0.6
7
100
20
MAX.
1.4
10
250
200
−
120
1.4
−
1.0
−
300
100
(T
a
=25˚C)
Unit
V
µA
pF
µA
V
mA
V
Ω
pF
kHz
µs
µs
Sheet No.: D2-A02802EN
4
PC4H520NIP0F
Fig.1 Forward Current vs. Ambient
Temperature
50
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
100
Diode power dissipation P (mW)
Forward current I
F
(mA)
40
80
70
60
30
20
40
10
0
−40 −25
20
0
−40 −25
0
25
50 55
75
100
125
0
25
50 55
75
100
125
Ambient temperature T
a
(˚C)
Ambient temperature T
a
(˚C)
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
250
Collector power dissipation P
C
(mW)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
250
210
200
200
180
150
Total power dissipation P
tot
(mW)
0
25
50
75
100
125
150
100
100
50
50
0
−40 −25
0
−40 −25
0
25
50
75
100
125
Ambient temperature T
a
(˚C)
Ambient temperature T
a
(˚C)
Fig.5 Peak Forward Current vs. Duty Ratio
Pulse width≤100µs
T
a
=25˚C
Fig.6 Forward Current vs. Forward Voltage
100
1 000
Peak forward current I
FM
(mA)
Forward current I
F
(mA)
T
a
=25˚C
10
T
a
=100˚C
T
a
=75˚C
1
T
a
=50˚C
T
a
=−25˚C
T
a
=0˚C
100
10
10
−3
10
−2
Duty ratio
10
−1
0.1
1
0
0.5
1
1.5
2
Forward voltage V
F
(V)
Sheet No.: D2-A02802EN
5
