*1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
2.15mm
PD412PI
s
Electro-optical Characteristics
Parameter
Shortcircuit current
Shortcircuit current temperature coefficient
Dark current
Dark current temperature coefficient
Terminal capacitance
Peak sensitivity wavelength
Peak spectral sensitivity
Response time
Half intensity angle
*2 E
V
: Illuminance by CIE standard light source A (tungsten lamp)
(Ta=25 ˚C)
Symbol
Isc
β
T
I
d
α
T
C
t
λ
p
K
t
r
t
f
∆ θ
*2
*2
Conditions
E
V
= 100 lx
E
V
= 100 lx
V
R
= 10V, Ee= 0
V
R
= 10V, Ee= 0
V
R
= 3V, f= 1MH
Z
l = 780nm
R
L
= 1kΩ
V
R
= 10V
MIN.
3.5
-
-
-
-
-
-
-
-
-
TYP.
4.7
0.2
0.5
3.5
100
800
0.5
250
250
± 45
MAX.
6.3
-
10
5.0
350
-
-
-
-
-
Unit
µ
A
% /˚C
nA
times/10˚C
pF
nm
A/W
ns
˚
Rise Time
Fall Time
Fig. 1 Power Dissipation vs. Ambient
Temperature
200
Fig. 2 Shortcircuit Current vs. Illuminance
1000
Ta=25˚C
150
Shortcircuit current I
SC
(
µ
A)
Power dissipation P (mW)
100
10
100
1
50
0.1
0
- 25
0
25
50
75 85
100
0.01
1
10
100
1000
10000
Ambient temperature T
a
( ˚C)
Illuminance E
V
(lx)
PD412PI
Fig. 3 Spectral Sensitivity
100
90
80
Fig. 4 Dark Current vs. Ambient Temperature
10
-7
Ta=25˚C
10
-8
V
R
=10V
Relative sensitivity (%)
70
60
50
40
30
20
10
0
400
500
600
700
800
900 1000 1100 1200
(A)
Dark current I
d
10
-9
10
- 10
10
10
-11
-12
10
-13
Wavelength
λ
(nm)
- 25
0
25
50
75
100
Ambient temperature T
a
(˚C)
Fig. 5 Dark Current vs. Reverse Voltage
1000
Ta=25˚C
Fig. 6 Terminal Capacitance vs. Reverse
Voltage
300
f=1MHz
Ta=25˚C
100
Terminal capacitance C
t
( pF )
250
(pA)
200
Dark current I
d
10
150
100
1
50
0
0.01
0.1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse voltage V
R
(V)
Reverse voltage V
R
( V)
Fig. 7 Relative Output vs. Ambient Temperature
115
Light source : CIE standard light
source A (tungsten lamp)
Fig. 8 Radiation Diagram
- 20˚
- 10˚
0
100
-30˚
80
+10˚
(T
a
= 25˚C )
+ 20˚
110
+ 30˚
105
-40˚
Relative sensitivity (%)
Relative output (%)
60
+ 40˚
100
-50˚
40
+ 50˚
+ 60˚
95
-60˚
-70˚
-80˚
90
20
+ 70˚
+ 80˚
+ 90˚
85
- 25
-90˚
0
25
50
75
100
0
Ambient temperature T
a
(˚C)
Angular displacement
θ
PD412PI
Fig. 9 Relative Output vs. Distance
(Detector : GL537/GL538)
100
GL538
Fig. 10 Response Time vs. Load Resistance
100
V
R
=10V
Ta=25˚C
Relative output (%)
10
GL537
Response time t
r
,t
f
(
µ
s )
10
1
t
r
, t
f
1
0.1
0.1
10
I
F
= 20mA
T
a
= 25˚C
-4
10
-3
10
-2
10
-1
0.01
10
1
10
2
10
3
10
4
10
5
Distance between emitter and detector d (m)
Load resistance R
L
(
Ω
)
Test Circuit for Response Time
Semiconductor laser
I
OUT
=
0.1mA
PD412PI
+
Output
R
L
10V
Input
90%
Output
t
r
t
f
10%
Pulse generator
q
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
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