首页 > 器件类别 > 存储 > 存储

PDM31548SA20SOI

Standard SRAM, 128KX16, 20ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

器件类别:存储    存储   

厂商名称:IXYS

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
不符合
厂商名称
IXYS
零件包装代码
SOJ
包装说明
0.400 INCH, PLASTIC, SOJ-44
针数
44
Reach Compliance Code
unknown
ECCN代码
3A991.B.2.A
最长访问时间
20 ns
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J44
JESD-609代码
e0
长度
28.56 mm
内存密度
2097152 bit
内存集成电路类型
STANDARD SRAM
内存宽度
16
功能数量
1
端子数量
44
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
128KX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ44,.44
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
3.76 mm
最大待机电流
0.008 A
最小待机电流
3 V
最大压摆率
0.195 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
PRELIMINARY
PDM31548
PDM31548
128K x 16 CMOS
3.3V Static RAM
1
2
3
4
5
6
7
Features
n
Description
The PDM31548 is a high-performance CMOS static
RAM organized as 131,072 x 16 bits. The PDM31548
features low power dissipation using chip enable
(CE) and has an output enable input (OE) for fast
memory access. Byte access is supported by upper
and lower byte controls.
The PDM31548 operates from a single 3.3V power
supply and all inputs and outputs are fully TTL-
compatible.
The PDM31548 is available in a 44-pin 400-mil plas-
tic SOJ and a plastic TSOP (II) package for high-
density surface assembly and is suitable for use in
high-speed applications requiring high-speed
storage.
n
n
n
n
n
n
n
n
High-speed access times
- Com’l: 10, 12, 15 and 20 ns
- Ind: 12, 15 and 20 ns
Low power operation (typical)
- PDM31548SA
Active: 250 mW
Standby: 25 mW
High-density 128K x 16 architecture
3.3V (±0.3V) power supply
Fully static operation
TTL-compatible inputs and outputs
Output buffer controls: OE
Data byte controls: LB, UB
Packages:
Plastic SOJ (400 mil) - SO
Plastic TSOP (II) - T
Functional Block Diagram
Row Address
Buffer
Row Decoder
Vcc
Vss
A8-A0
Memory
Cell
Array
256 x
x
128 x 32
512 128 x 32
8
9
10
11
I/O15-I/O0
Data
Input/
Output
Buffer
Sense Amp
Column
Decoder
WE
OE
UB
LB
CE
Control
Logic
Clock
Generator
Column
Address
Buffer
12
A16 - A9
A15-A9
Rev. 1.3 - 4/13/98
1
PRELIMINARY
PDM31548
Pin Configuration
TSOP
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
Vss
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
Vss
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
Vss
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SOJ
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
Vss
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
Pin Description
Name
A16-A0
I/O15-I/O0
CE
WE
OE
LB, UB
NC
V
ss
V
CC
Description
Address Inputs
Data Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
No Connect
Ground
Power (+3.3V)
Capacitance
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= V
SS
V
I/O
= V
SS
Max.
6
8
Unit
pF
pF
NOTE:
1. This parameter is determined by device characterization, but is not production tested.
2
Rev. 1.3 - 4/13/98
PRELIMINARY
PDM31548
Operating Mode
Mode
Read
CE
L
OE
L
WE
H
LB
L
H
L
Write
L
X
L
L
H
L
Output Disable
L
L
Standby
H
H
X
X
H
X
X
X
H
X
UB
L
L
H
L
L
H
x
H
X
I/O7-I/O0
Output
High Impedance
Output
Input
High Impedance
Input
High Impedance
High Impedance
High Impedance
I/O15-I/O8
Output
Output
High Impedance
Input
Input
High Impedance
High Impedance
High Impedance
High Impedance
Power
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
SB
1
2
3
4
5
6
7
8
9
10
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
T
j
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Maximum Junction Temperature
(2)
Com’l.
–0.5 to +4.6
–55 to +125
–55 to +125
1.5
50
125
Ind.
–0.5 to +4.6
–65 to +135
–65 to +150
1.5
50
145
Unit
V
°C
°C
W
mA
°C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The
calculation should be of the form
: T
j
= T
a
+ P *
θ
ja
where T
a
is the ambient tempera-
ture, P is average operating power and
θ
ja
the thermal resistance of the package. For
this product, use the following
θ
ja
values:
SOJ: 59
o
C/W
TSOP: 87
o
C/W
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Description
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
3.0
0
–40
0
Typ.
3.3
0
25
25
Max.
3.6
0
85
70
Unit
V
V
°C
°C
11
12
3
Rev. 1.3 - 4/13/98
PRELIMINARY
PDM31548
DC Electrical Characteristics
(V
CC
= 3.3V
±
0.3V)
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
Test Conditions
V
CC
= Max., V
IN
= Vss to V
CC
V
CC
= Max.,
CE = V
IH
, V
OUT
= Vss to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
–0.3
(1)
2.2
2.4
Max.
5
5
0.8
Vcc +
0.3
0.4
Unit
µA
µA
V
V
V
V
NOTE: 1.V
IL
(min) = –3.0V for pulse width less than 20 ns.
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE
V
HC
f=0
V
CC
= Max.,
V
IN
V
CC
– 0.2V or
0.2V
8
8
8
8
8
8
8
mA
20
20
20
20
20
20
20
mA
-12
Ind.
175
-15
-20
Unit
mA
Com’l Com’l
175
165
Com’l Ind. Com’l Ind.
165
185
170
195
NOTES: All values are maximum guaranteed values.
V
LC
0.2V, V
HC
V
CC
– 0.2V
4
Rev. 1.3 - 4/13/98
PRELIMINARY
PDM31548
AC Test Conditions
Input pulse levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
V
SS
to 3.0V
2.5 NS
1.5V
1.5V
See Figures 1 and 2
1
2
3
4
+3.3V
317Ω
D
OUT
351Ω
30 pF
+3.3V
317Ω
D
OUT
351Ω
5 pF
5
6
7
8
9
10
11
12
Figure 1. Output Load
Figure 2. Output Load Equivalent
(for t
LZCE
, t
HZCE
, t
LZWE
, t
HZWE
)
Rev. 1.3 - 4/13/98
5
查看更多>
基于DSP的高速实时语音识别系统的设计
实时语音识别系统中,由于语音的数据量大,运算复杂,对处理器性能提出了很高的要求,适于采用高速DSP实...
Aguilera DSP 与 ARM 处理器
iTOP-iMX6开发板-Android-can测试例程介绍
TOP-iMX6开发板的 Android 源码的 can 例程包含在 Android 源码中,在...
砂舞的玩笑 嵌入式系统
能到M级以上开关频率mosfet的型号有什么啊 ?
想用耐压500v以上,耐流几十A的 频率1M以上 的mosfet有什么型号啊 能推荐几个么 能到M...
jiliyate 电源技术
高效测量“芯”搭档 | ACM32激光测距仪应用方案
激光测距仪概述 激光测距仪是利用激光对目标的距离进行准确测定的仪器。激光测距仪在工作时向目标...
weixin-QNKJSY 51单片机
TDA2030音频功放电路图
TDA2030是音频功放电路,采用V型5脚单列直插式塑料封装结构。如图所示,按引脚的形状引...
Jacktang 模拟与混合信号
【米尔 瑞芯微RK3568 工业开发板】基于libuv的客户端TCP连接
# 【米尔 瑞芯微RK3568 工业开发板】基于libuv的客户端TCP连接 今天给大家带来的试用...
jobszheng5 工控电子
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消