PRELIMINARY
PDM41532
64K x 16 CMOS
Static SRAM
Features
s
High-speed access times
- Com’l: 10, 12, 15, 17 and 20 ns
- Ind: 12, 15, 17 and 20 ns
Low power operation (typical)
- PDM41532SA
Active: 400 mW
Standby: 150 mW
- PDM41532LA
Active: 350 mW
Standby: 100 mW
High-density 64K x 16 architecture
Single +5V (±10%) power supply
Fully static operation
TTL-compatible inputs and outputs
Outbut buffer controls: OE
Data byte controls: LB, UB
Packages:
Plastic SOJ (400 mil) - SO
Plastic TSOP - T
Description
The PDM41532 is a high-performance CMOS static
RAM organized as 65,536 x 16 bits. The PDM41532
features low power dissipation using chip enable
(CE) and has an output enable input (OE) for fast
memory access. Byte access is supported by upper
and lower byte controls.
The PDM41532 operates from a single 5.0V power
supply and all inputs and outputs are fully TTL-
compatible. The PDM41532 comes in two versions,
the standard power version PDM41532SA and a low
power version PDM41532LA. The two versions are
functionally the same and only differ in their power
consumption.
The PDM41532 is available in a 44-pin 400-mil plas-
tic SOJ and a plastic TSOP package suitable for high-
density surface assembly and is suitable for use in
high-speed applications such as cache memory and
high-speed storage.
1
2
3
4
5
6
7
8
9
10
11
12
s
s
s
s
s
s
s
s
Functional Block Diagram
Rev. 1.0 - 7/17/96
4-41
PRELIMINARY
PDM41532
Pin Configuration
TSOP
SOJ
Pin Description
Name
A15-A0
I/O15-I/O0
CE
WE
OE
LB, UB
NC
V
SS
V
CC
Description
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
No connect
Ground
Power (+5V)
Capacitance
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= V
SS
V
I/O
= V
SS
Max.
6
8
Unit
pF
pF
NOTE:1. This parameter is determined by device characterization, but is not production tested.
4-42
Rev. 1.0 - 7/17/96
PRELIMINARY
PDM41532
Operating Mode
Mode
Read
CE
L
OE
L
WE
H
LB
L
H
L
Write
L
X
L
L
H
L
Output Disable
L
L
Standby
H
H
X
X
H
X
X
X
H
X
UB
L
L
H
L
L
H
x
H
X
I/O7-I/O0
Output
High Impedance
Output
Input
High Impedance
Input
High Impedance
High Impedance
High Impedance
I/O15-I/O8
Output
Output
High Impedance
Input
Input
High Impedance
High Impedance
High Impedance
High Impedance
Power
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
SB
1
2
3
4
5
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
Symbol
V
TERM
T
BIAS
T
STG
P
D
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
50
Unit
V
°C
°C
W
mA
6
7
8
9
NOTE:1.Stresses greater than those listed under ABSOLUTE MAXIMUM RA
TINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Description
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
10
11
12
Rev. 1.0 - 7/17/96
4-43
PRELIMINARY
PDM41532
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
PDM41532SA
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
Test Conditions
V
CC
= Max., V
IN
= Vss to V
CC
V
CC
= Max.,
CE = V
IH
, V
OUT
= Vss to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
–0.5
(1)
2.2
—
2.4
Max.
5
5
0.8
Vcc +
0.5
0.4
—
PDM41532LA
Min.
–5
–5
–0.5
(1)
2.2
—
2.4
Max.
5
5
0.8
Vcc +
0.5
0.4
—
µA
µA
V
V
V
V
Unit
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns.
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE
≥
V
HC
f=0
V
CC
= Max.,
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
Power
SA
Com’l.
295
-12
-15
-17
-20
Unit
mA
Com’l Ind. Com’l Ind. Com’l Ind. Com’l Ind.
285
295
265
275
240
250
220
230
LA
280
270
275
245
265
220
240
200
210
mA
SA
LA
SA
LA
40
30
10
5
40
30
10
5
40
30
15
10
35
25
10
5
35
25
15
10
35
25
10
5
35
25
15
10
30
20
10
5
30
20
15
10
mA
mA
mA
mA
NOTES: All values are maximum guaranteed values.
V
LC
≤
0.2V, V
HC
≥
V
CC
– 0.2V
4-44
Rev. 1.0 - 7/17/96
PRELIMINARY
PDM41532
AC Test Conditions
Input pulse levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
V
SS
to 3.0V
3 ns
1.5V
1.5V
See Figures 1 and 2
1
2
3
4
Figure 1. Output Load
Figure 2. Output Load Equivalent
(for t
LZCE
, t
HZCE
, t
LZWE
, t
HZWE
)
5
6
7
8
9
10
11
12
Rev. 1.0 - 7/17/96
4-45
微控制器 MCU
