PE42553
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz
Features
• Excellent power handling: 36 dBm CW and 38 dBm
pulsed power in 50Ω @ 8 GHz
• High linearity: IIP3 of 66 dBm
• High isolation
▪
45 dB @ 3 GHz
▪
41 dB @ 8 GHz
• HaRP™ technology enhanced
▪
Fast settling time
▪
No gate and phase lag
▪
No drift in insertion loss and phase
• High ESD performance
▪
2.5 kV HBM on all pins, 4 kV HBM on RF pins to
GND
▪
1 kV CDM on all pins
• Packaging – 16-lead 3 × 3 mm QFN
Applications
• Test and measurement
▪
Signal sources
▪
Communication testers
▪
Spectrum analyzers
▪
Network analyzers
• Automated test equipment
• General purpose TX/RX switch
Figure 1 •
PE42553 Functional Diagram
RFC
RF1
RF2
50Ω
50Ω
CMOS Control Driver and ESD
LS
CTRL
V
SS_EXT
Product Description
The PE42553 is a HaRP
TM
technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and
fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE)
and other high performance wireless applications.
The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm
continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC
voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS
®
process, a
patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
©2016, 2018 pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External V
SS
For proper operation, the V
SS_EXT
pin must be grounded or tied to the V
SS
voltage specified in
Table 2.
When the
V
SS_EXT
pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, V
SS_EXT
can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE42553
Parameter/Condition
Supply voltage, V
DD
Digital input voltage, CTRL
LS input voltage
RF input power, CW (RFC–RFX)
(1)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power, pulsed (RFC–RFX)
(2)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power into terminated ports, CW (RFX)
(1)
9–800 kHz
>800 kHz–8 GHz
Maximum junction temperature
Storage temperature range
–65
Min
–0.3
–0.3
–0.3
Max
5.5
3.6
3.6
Unit
V
V
V
Fig. 2, Fig. 3
37
dBm
dBm
Fig. 2, Fig. 3
Fig. 4, Fig. 5
dBm
dBm
Fig. 2, Fig. 3
28
+150
+150
dBm
dBm
°C
°C
Page 2 of 20
www.psemi.com
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Table 1 •
Absolute Maximum Ratings for PE42553
Parameter/Condition
ESD voltage HBM
(3)
RF pins to GND
All pins
ESD voltage MM, all pins
(4)
ESD voltage CDM, all pins
(5)
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620
μs
period, 50Ω.
3) Human body model (MIL-STD 883 Method 3015).
4) Machine model (JEDEC JESD22-A115).
5) Charged device model (JEDEC JESD22-C101).
Min
Max
4000
2500
200
1000
Unit
V
V
V
V
DOC-76991-2 – (11/2018)
www.psemi.com
Page 3 of 20
PE42553
SPDT RF Switch
Recommended Operating Conditions
Table 2
list the recommending operating condition for PE42553. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 •
Recommended Operating Condition for PE42553
Parameter
Normal mode (V
SS_EXT
= 0V)
(1)
Supply voltage, V
DD
Supply current, I
DD
Bypass mode (V
SS_EXT
= –3.4V, V
DD
≥
3.4V for full spec. compliance)
(2)
Supply voltage, V
DD
Supply current, I
DD
Negative supply voltage, V
SS_EXT
Negative supply current, I
SS
Normal or Bypass mode
Digital input high, CTRL
Digital input low, CTRL
Digital input current, I
CTRL
RF input power, CW (RFC–RFX)
(3)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power, pulsed (RFC–RFX)
(4)
9 kHz–10 MHz
>10 MHz–8 GHz
RF input power, hot switch, CW
(3)
9–300 kHz
>300 kHz–8 GHz
RF input power into terminated ports, CW (RFX)
(3)
9–600 kHz
>600 kHz–8 GHz
Operating temperature range
–40
+25
1.17
–0.3
3.6
0.6
10
V
V
μA
–3.6
–40
–16
2.6
3.4
50
5.5
80
–2.6
V
μA
V
μA
2.3
120
5.5
200
V
μA
Min
Typ
Max
Unit
Fig. 2, Fig. 3
36
dBm
dBm
Fig. 2, Fig. 3
Fig. 4, Fig. 5
dBm
dBm
Fig. 2, Fig. 3
20
dBm
dBm
Fig. 2, Fig. 3
26
+85
dBm
dBm
°C
Notes:
1) Normal mode: connect V
SS_EXT
(pin 13) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 13) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50Ω.
4) Pulsed, 5% duty cycle of 4620
μs
period, 50Ω.
Page 4 of 20
www.psemi.com
DOC-76991-2 – (11/2018)
PE42553
SPDT RF Switch
Electrical Specifications
Table 3
provides the PE42553 key electrical specifications at 25 °C (Z
S
= Z
L
= 50Ω), unless otherwise specified.
Normal mode
(1)
is at V
DD
= 3.3V and V
SS_EXT
= 0V. Bypass mode
(2)
is at V
DD
= 3.4V and V
SS_EXT
= –3.4V.
Table 3 •
PE42553 Electrical Specifications
Parameter
Operating frequency
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
9 kHz–10 MHz
10 MHz–3 GHz
3–8 GHz
10 MHz–8 GHz
834 MHz, 1950 MHz
834 MHz, 1950 MHz and 2700 MHz
50% CTRL to 0.05 dB final value
50% CTRL to 90% or 10% of RF
70
46
33
80
42
38
Path
Condition
Min
9 kHz
Typ
Max
8 GHz
Unit
As
shown
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Insertion loss
RFC–RFX
0.60
0.80
0.85
90
54
36
90
45
41
23
17
15
23
17
15
32
24
19
Fig. 4
Fig. 5
120
66
15
5.5
0.80
1.00
1.05
RFX–RFX
Isolation
RFC–RFX
Return loss (active port)
RFC–RFX
Return loss
(RFC port)
RFC–RFX
Return loss
(terminated port)
Input 0.1dB compression
point
(3)
Input IP2
Input IP3
Settling time
Switching time
RFX
RFC–RFX
RFC–RFX
RFC–RFX
20
9.5
μs
μs
Notes:
1) Normal mode: connect V
SS_EXT
(pin 29) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 29) to bypass and disable internal negative voltage generator.
3) The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the RF input power (50Ω).
DOC-76991-2 – (11/2018)
www.psemi.com
Page 5 of 20
嵌入式系统
