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PEMI8QFN-WM132

EMI Filter Circuits 1,2,4,6,8 CH PASSIVE FILTER NETWORK W/ESD

器件类别:无源元件   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
产品种类
Product Category
EMI Filter Circuits
制造商
Manufacturer
NXP(恩智浦)
RoHS
Details
系列
Packaging
Cut Tape
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
4000
文档预览
PEMIxQFN; PEMI2STD family
Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network
with ESD protection
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
The devices are a family of RC low pass filters. They are designed to provide filtering of
undesired RF signals on the I/O ports of portable communication or computing devices.
The devices incorporate diodes to provide protection to downstream components from
ElectroStatic Discharge (ESD) voltages up to
25
kV.
The devices are fabricated using monolithic silicon technology in lead-free plastic
packages.
Table 1.
Product overview
Package
SOT883
SOT886
SOT665
SOT1157-1
SOT1158-1
SOT1159-1
Number of
channels
1
2
1
4
6
8
Package
pitch (mm)
-
0.5
-
0.4
0.4
0.4
Package configuration
3-pin MicroPak (QFN compatible)
6-pin MicroPak (QFN compatible)
5-pin microlead
8-pin extremely thin leadless
12-pin extremely thin leadless
16-pin extremely thin leadless
Type number
PEMI1QFN
PEMI2QFN
PEMI2STD
PEMI4QFN
PEMI6QFN
PEMI8QFN
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Integrated 1-, 2-, 4-, 6- and 8-channel
-type
RC filter network
ESD protection up to
25
kV contact discharge according to IEC 61000-4-2,
far exceeding level 4
1.3 Applications
General-purpose ElectroMagnetic Interference (EMI) and Radio-Frequency
Interference (RFI) filtering and downstream ESD protection for:
Cellular phone and Personal Communication Systems (PCS) mobile handsets
Cordless telephones
Wireless data (WAN/LAN) systems
NXP Semiconductors
PEMIxQFN; PEMI2STD family
1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection
1.4 Quick reference data
Table 2.
Symbol
R
s(ch)
Quick reference data
Parameter
channel series resistance
PEMIxxxx/Cx
PEMIxxxx/Hx
PEMIxxxx/Lx
PEMIxxxx/Rx
PEMIxxxx/Wx
C
ch
channel capacitance
PEMIxxxx/xE
PEMIxxxx/xG
PEMIxxxx/xK
PEMIxxxx/xM
PEMIxxxx/xP
PEMIxxxx/xR
PEMIxxxx/xT
for the total channel;
f = 100 kHz; V
bias(DC)
= 0 V
15
19
23
28
32
36
40
pF
pF
pF
pF
pF
pF
pF
20
45
65
100
200
Conditions
Typ
Unit
2. Pinning information
Table 3.
Pin
1 and 2
3
Pinning
Description
filter channel
ground (GND)
1
3
2
Transparent
top view
Rs(ch)
Simplified outline
Graphic symbol
PEMI1QFN (SOT883)
1
Cch
2
Cch
2
2
3
018aaa042
PEMI2QFN (SOT886)
1 and 6
2 and 5
3 and 4
filter channel 1
ground (GND)
filter channel 2
6
5
4
1,3
Cch
2
Cch
2
Rs(ch)
4,6
2,5
1
2
3
Transparent
top view
018aaa044
PEMIXQFN_PEMI2STD_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
2 of 29
NXP Semiconductors
PEMIxQFN; PEMI2STD family
1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection
Pinning
…continued
Description
filter channel 1
ground (GND)
filter channel 2
5
4
1,3
Cch
2
Cch
2
Rs(ch)
Table 3.
Pin
1 and 5
2
3 and 4
Simplified outline
Graphic symbol
PEMI2STD (SOT665)
4,5
2
1
2
3
018aaa043
PEMI4QFN (SOT1157-1)
1 and 8
2 and 7
3 and 6
4 and 5
ground
pad
filter channel 1
filter channel 2
filter channel 3
filter channel 4
ground (GND)
1
4
Transparent
top view
8
5
1 to 4
Cch
2
Cch
2
Rs(ch)
5 to 8
GND
018aaa071
PEMI6QFN (SOT1158-1)
1 and 12
2 and 11
3 and 10
4 and 9
5 and 8
6 and 7
ground
pad
1 and 16
2 and 15
3 and 14
4 and 13
5 and 12
6 and 11
7 and 10
8 and 9
ground
pad
filter channel 1
filter channel 2
filter channel 3
filter channel 4
filter channel 5
filter channel 6
ground (GND)
1
Transparent
top view
6
GND
018aaa072
12
7
1 to 6
Rs(ch)
7 to 12
Cch
2
Cch
2
PEMI8QFN (SOT1159-1)
filter channel 1
filter channel 2
filter channel 3
filter channel 4
filter channel 5
filter channel 6
filter channel 7
filter channel 8
ground (GND)
1
8
Transparent top view
GND
018aaa073
16
9
1 to 8
Rs(ch)
9 to 16
Cch
2
Cch
2
PEMIXQFN_PEMI2STD_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
3 of 29
NXP Semiconductors
PEMIxQFN; PEMI2STD family
1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMI1QFN
PEMI2QFN
PEMI2STD
PEMI4QFN
PEMI6QFN
PEMI8QFN
SC-101
XSON6
-
HXSON8
Description
leadless ultra small plastic package; 3 solder lands; body 1.0
0.6
0.5 mm
plastic extremely thin small outline package; no leads; 6 terminals;
body 1
1.45
0.5 mm
plastic surface-mounted package; 5 leads
plastic thermal enhanced extremely thin small outline package; no leads;
8 terminals; body 1.2
1.7
0.5 mm
Version
SOT883
SOT886
SOT665
SOT1157-1
SOT1158-1
SOT1159-1
Type number
HXSON12 plastic thermal enhanced extremely thin small outline package; no leads;
12 terminals; body 1.2
2.5
0.5 mm
HXSON16 plastic thermal enhanced extremely thin small outline package; no leads;
16 terminals; body 1.2
3.3
0.5 mm
4. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
ESD
Parameter
supply voltage
electrostatic discharge
voltage
IEC 61000-4-2, level 4
all pins to ground
contact discharge
air discharge
PEMIxxxx/xM;
PEMIxxxx/xP
PEMIxxxx/xR;
PEMIxxxx/xT
P
ch
P
tot
T
stg
T
amb
contact discharge
air discharge
contact discharge
air discharge
-
-
-
-
-
-
-
-
55
40
15
15
20
20
25
25
60
120
+150
+85
kV
kV
kV
kV
kV
kV
mW
mW
C
C
Conditions
Min
0.5
Max
+5.6
Unit
V
channel power dissipation continuous power;
T
amb
= 85
C
total power dissipation
storage temperature
ambient temperature
continuous power;
T
amb
= 85
C
PEMIXQFN_PEMI2STD_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
4 of 29
NXP Semiconductors
PEMIxQFN; PEMI2STD family
1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection
5. Characteristics
Table 6.
Channel characteristics
T
amb
= 25
C; unless otherwise specified.
Symbol Parameter
R
s(ch)
channel series resistance
PEMIxxxx/Cx
PEMIxxxx/Hx
PEMIxxxx/Lx
PEMIxxxx/Rx
PEMIxxxx/Wx
C
ch
channel capacitance
PEMIxxxx/xE
PEMIxxxx/xG
PEMIxxxx/xK
PEMIxxxx/xM
PEMIxxxx/xP
PEMIxxxx/xR
PEMIxxxx/xT
V
BR
V
F
I
LR
breakdown voltage
forward voltage
reverse leakage current
for the total channel;
f = 100 kHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
positive clamp; I
I
= 1 mA
negative clamp; I
F
= 1 mA
per channel; V
I
= 3.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.8
1.5
-
15
8.5
19
11
23
13.5
28
16
32
18.5
36
21
40
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9
0.4
0.1
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
V
V
A
18
40
58
90
180
20
45
65
100
200
22
50
72
110
220
Conditions
Min
Typ
Max
Unit
PEMIXQFN_PEMI2STD_FAM
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
5 of 29
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