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PI3012A

300dpi cis sensor chip

厂商名称:AMI [American Megatrends Inc]

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Peripheral
Imaging
Corporation
PI3012A
300DPI CIS Sensor Chip
Engineering Data Sheet
Description:
Peripheral Imaging Corporation PI3012A CIS sensor chip is a 300 dot per inch resolution
linear array image sensor chip which utilizes PIC’s proprietary CMOS Image Sensing
Technology. This image sensor is to be used for butting end-to-end on a printed circuit board
(PCB) using chip-on-board technology to form a scanning array with various lengths.
Applications for the sensor array are facsimile, scanner, check reader, and office automation
equipment.
Figure 1 is a block diagram of the sensor chip. Each sensor chip consists of 96 detector elements,
8080µm
1
2
3
4
ROW OF 96 SENSORS
AND VIDEO SIGNAL
LINE MULTIPLEXER
93
94
95
96
READOUT SHIFT REGISTER
380µm
BUFFER
BUFFER
CP
VDD DGND
CHIP
SELECT
IOUT
BUFFER
EOS
SP
PI3012A SENSOR CHIP
FIGURE 1 BLOCK DIAGRAM
their associated multiplexing switches, buffers, and a chip selector. The detector element-to-element
spacing is approximately 84.6 µm. The size of each chip without scribe lines is 8080 µm by 380 µm.
Each sensor chip has 6 bonding pads. The pad symbols and functions are described in Table 1.
PAGE 1 of 7 PI3012A6, 6/9/99
SYMBOL
SP
CP
VDD
DGND
IOUT
EOS
FUNCTION
Start Pulse: Input to start the line scan.
Clock Pulse: Input to clock the Shift Register.
Positive Supply: +5 volt supply connected to substrate.
Digital Ground: Connection topside common.
Signal Current Output: Output for video signal current
End of Scan Pulse: Output from the shift register at end of scan.
Table 1. Pad Symbols and Functions
Bonding pad layout diagram:
8080 µm
SENSOR DIE
Y
380µm
IOUT
B1 W1
EOS
SP
X
W C B E
CP
VDD
GND
X
NOTE: ALL PAD OPENNINGS ARE 140 X 80 µm
EXCEPT FOR THE TEST PADS, WHICH ARE 80 X 80 µm.
PAD
SP
CP
VDD
VSS
IOUT
EOS
W
C
B
E
B1
W1
FUNCTION
START INPUT
CLOCK INPUT
+ 5 VOLT SUPPLY
GROUND
VIDEO SIGNAL OUT
SCAN OUTPUT
TP
TP
TP
TP
TP
TP
Y
30
30
30
30
30
30
30
30
30
30
30
30
X
742.5
2767.0
3124.5
3419.0
5095.5
7000.1
1162.5
1312.5
1658.0
1807.0
5407.0
5672.0
NOTES:
1. THE DRAWING IS NOT TO SCALE.
2. THE DIE LENGTH AND WIDTH ARE
GIVEN AS SHOWN.
3. THE PAD LOCATIONS ARE GIVEN
IN THE TABLE.
4. THERE ARE TWO EXAMPLES OF
THE X AND Y LOCATIONS SHOWN
ON THE FIRST TWO PADS. THEY
ARE MEASURED TO THE LEFT BOTTOM
CORNER OF THE PAD OPENNING.
5. ALL DIMENSIONS ARE IN µm.
6. TP ARE TEST POINTS, THEY ARE
NOT TO BE BONDED OUT.
FIGURE 2. PI3012A PAD LAYOUT AND DIE SIZE.
Figure 2 shows the bonding pad locations for PI3012A Sensor Chip relative to the lower left corner of the die.
the die.
Electro-Optical Characteristics (25
o
C)
Table 2, below, lists the electro-optical characteristics of PI3012A sensor chip at 25
o
C.
PAGE 2 OF 7 PI3012A, 6/9/99
Parameters
Number of Photo-elements
Pixel-to-pixel spacing
Line scanning rate
Clock frequency
Output voltage
Symbols
Tint *
(1)
f *
(2)
Vp*
(3)
Typical
96
84.6
1.3
2.0
200
Units
elements
mm
ms/line
MHz
mV
Notes
Level is adjustable see
(3)
This measurement was
directly taken on the video
line without an amplifier.
Output voltage non-uniformity
Chip-to-chip non-uniformity
Dark output voltage
Dark output non-uniformity
Up *
(4)
Ud
Vd *
(5)
Ud *
(6)
± 7.5
± 7.5
10
<15
%
%
mV
mV
Table 2. Electro-Optical Characteristic
Notes: (1) Tint stands for the line scanning rate or the integration time. It is determined
by the time interval between two start pulses.
(2) f stands for the input clock frequency:
@ 1.0 MHz the total active line scan time for a A4 CIS module is 2.6 ms
of the line integration time.
@ 2.0 MHz the total active line scan time for a A4 CIS module is 1.3 ms
of the line integration time.
(3) Vp is a video output signal. It is converted from the signal current by
charging the video line capacitance. An amplifier buffers the video line
capacitance and allows line to charge, and the line is discharged through a
shunting switch that shunts it to ground. This amplifier also provides a
variable gain, typically 4 to 5 times the voltage that is measured on the video
line. Hence, as indicated in the schematic, the video output level is
adjustable.
(4) Up = [(Vpmax-Vp)/Vp]x100%
Or [(Vp-Vpmin)/Vp]x100%
Where Vp = (Vpmax+Vpmin)/2
Vpmax is the maximum pixel output voltage in the light.
Vpmin is the minimum pixel output voltage in the light.
Note: In the light means the sensor is exposed to the light.
(5) Vd = (Vdmax+Vdmin)/2
Vdmax is the maximum pixel output voltage in the dark.
Vdmin is the minimum pixel output voltage in the dark.
Note: In the dark means that sensor is light shielded and has no
exposure to the light.
(5) Ud = [(Vdmax-Vdmin)/Vd]x100%
PAGE 3 OF 7 PI3012A, 6/9/99
Absolute Maximum Ratings:
Parameters
Power Supply Voltage
Power Supply Current
Input clock pulse (high level)
Input clock pulse (low level)
Operating Temperature
Operating Humidity
Storage Temperature
Storage Humidity
Symbol
VDD
IDD
Vih
Vil
Top
Hop
Tstg
Hstg
Maximum Rating
10
<2.0
Vdd + 0.5
-0.25
0 to 50
10 to 85
-25 to 75
10 to 90
Units
Volts
ma
Volts
Volts
o
C
RH %
o
C
RH %
Recommended Operating Conditions at Room Temperature
Parameters
Power Supply
Input clock pulses high level
Input clock pulse low level
Operating high level exposed output
Clock Frequency
Clock pulse duty cycle
Clock pulse high durations
Integration time
Operating Temperature
Symbol
VDD
Vih
Vil
Iout
f
tw
Tint
Top
Min.
4.5
2.8
0
0.1
Typical
5.0
5.0
0
2.0
25
0.125
1.3
25
Max.
5.5
VDD
0.8
5.0
Units
Volts
Volts
Volts
MHz
%
µsec
ms
o
C
Notes
1
1
2
3
4
4
3
10
50
Notes:
(1) Applies to both CP and SP.
(2) The output is a current that is proportional to the charges, which are integrated on the
phototransistor’s base via photon-to-electron conversion. Accordingly during read out, these
charges are discharged from the base through the transistor’s emitter proportionally to the Beta
of the phototransistor. Hence, the emitter current, that flows to the output video line, is the
signal that is proportional to the photon integrated charges. To gain the optimum performance,
the signal interfacing circuits are designed consistently with this signal process. The video
signal current is made to flow into a virtual ground, while the signal extraction circuit is made to
integrate these charges that converts these charges into the output signal voltage. The circuit
used for the converting the current charge to voltage is attached to this document as a
separate sheet.
(3) Although the clock frequency will operate the device at less than 100KHz, it is
recommended that the device be operated above 500KHz to maintain the devices performance
characteristic.
(4) The clock duty cycle typically is 25 %. However, it can operate with duty cycle as large as
50 %. This specified duty cycle is suggested because the 25 % of clock time, or the positive
time of the clock, is used in the reset process, while the remainder of the time is used inextracting
the signal during each pixel. Accordingly at low clock frequencies, it would help the
PAGE 4 OF 7 PI3012A, 6/9/99
operation if the duty cycle is less than 25 %. On the other hand, since the clock can operate with
a 50% duty cycle the operator has additional timing flexibility if it desired.
Switching Characteristics @ 25
o
C.
to
CP
tprh
tw
terdl
tdh
SP
tefdl
tds
Vout
ts/h
EOS
(END OF SCAN)
tdl
Figure 3. Timing Diagram of the PI3012 A Sensor
Item
Clock cycle time
Clock pulse width
(1)
Clock duty cycle
Data setup time
Data hold time
Prohibit crossing time
(2)
EOS rise delay
EOS fall delay
Signal delay time
(3)
Signal settling time
(3)
Symbol
to
tw
tds
tdh
tprh
terdl
tefdl
tdl
ts/h
Minimum
200
50
25
50
20
Mean
Maximum
10000
75
50
20
60
70
20
90
Units
ns
ns
%
ns
ns
ns
ns
ns
ns
ns
PAGE 5 OF 7 PI3012A, 6/9/99
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