• USB 2.0 compliant (high speed, full speed, and low speed)
• R
ON
: 4.0Ω typical @ V
DD
= 3.0V
• Channel On Capacitance: 6.0pF
• Wide -3dB Bandwidth: 1,000MHz
• Low bit-to-bit skew
• Low Crosstalk: -29B @ 480 Mbps
• Off Isolation: -28dB @ 480 Mbps
• Near-Zero propagation delay: 250ps
• Support 1.8-V logic on control pins
• V
DD
Operating Range: 3.0V to 5.5V
• ESD: 8kV HBM on Y+/Y- pins per JESD22 standard
• Y+/Y- pins have over-voltage protection and can tolerate a
short to VBUS
• Packaging (Pb-free & Green):
10-contact TQFN, 1.3mm x 1.6mm x 0.75mm (ZL10)
Description
The PI3USB102E is a single differential channel 2:1 multiplexer/
demultiplexer USB 2.0 Switch. Industry leading advantages in-
clude a propagation delay of 250ps, resulting from its low channel
resistance and I/O capacitance. PI3USB102E is bidirectional and
offers very little attenuation of high-speed signals. It is designed
for low bit-to-bit skew, high channel-to-channel noise isolation
and is compatible with various standards, such as High Speed
USB 2.0 (480 Mb/s).
The PI3USB102E offers over voltage protection for the Y+/Y- pins
as per the USB 2.0 specification. With the chip powered on or off if
Y+/Y- pins are shorted to VBUS (5V +/- 5%), M+/M- and D+/D-
outputs are clamped to provide voltage protection for downstream
devices.
Application
• Routes signals for USB 2.0
• PC, Notebooks and Hand-held devices
Block Diagram
over voltage
protection
Y+
Y-
M+
M-
over voltage
protection
D+
D-
SEL
OE
Control
Logic
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USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
PI3USB102E
Truth Table
SEL
X
L
H
OE
H
L
L
Y+
Hi-Z
M+
D+
Y-
Hi-Z
M-
D-
Pin Configuration
SEL
V
DD
9
10
Y+
Y-
1
2
3
GND
OE
8
7
6
D+
D-
5
M+
4
M-
Pin Description
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
Y+
Y-
GND
M-
M+
D-
D+
OE
V
DD
SEL
Description
USB Data bus
USB Data bus
Ground
Multiplexed Source Inputs
Multiplexed Source Inputs
Multiplexed Source Inputs
Multiplexed Source Inputs
Switch Enable
Positive Power Supply
Switch Select
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USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
PI3USB102E
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ......................................................–65°C to +150°C
Supply Voltage to Ground Potential ....................................–0.5V to +6V
DC Input Voltage .................................................................–0.5V to +6V
DC Output Current ........................................................................120mA
Power Dissipation .............................................................................0.5W
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended
periods may affect reliability.
DC Electrical Characteristics for USB 2.0 Switching over Operating Range
(T
A
= –40°C to +85°C, V
DD
= 3.0 - 5.5V)
Parameter
V
IH
V
IL
V
IK
I
IH
I
IL
I
IH
I
IL
I
Leakage
R
ON
R
FLAT(ON)
DR
ON
Description
Input HIGH Voltage
Input LOW Voltage
Clamp Diode Voltage
Input HIGH Current for SEL and OE
Input LOW Current for SEL and OE
Input HIGH Current for Y+/Y-
Input LOW Current for Y+/Y-
Leakage from Y+/Y- to Vdd when
V
Y+/Y-
> Vdd
Switch On-Resistance
(3)
On-Resistance Flatness
(3)
On-Resistance match from center
ports to any other port
(3)
Test Conditions
(1)
Guaranteed HIGH level
Guaranteed LOW level
V
DD
= Max., I
IK
= –18mA
V
DD
= Max., V
IH
= VDD
V
DD
= Max., V
IL
= GND
V
DD
= 3.3V., V
Y
= 5.25V
V
DD
= 3.3V., V
Y
= 0V
V
DD
= 3.3V., V
Y+/Y-
= 5.25V,
OE = LOW
V
DD
= 3V, 0V ≤ V
input
≤ 1.0V
,
I
ON
= –40mA
V
DD
= 3V, 0V ≤ V
input
≤ 1.0V
,
I
ON
= –40mA
V
DD
= 3V, 0V ≤ V
input
≤ 1.0V
,
I
ON
= –40mA
V
DD
= 3.0 V
3.1
3.4
3.7
-200
-200
4.0
1.5
0.9
3.2
3.5
3.8
2.0
3.4
3.7
4.0
200
200
5
nA
nA
uA
V
-100
-100
-0.7
Min.
1.4
0.8
-1.2
100
100
50
1
200
5.0
Ω
nA
uA
nA
V
Typ.
(2)
Max.
Units
V
OVP
Input Over-Voltage Protection Thresh-
V
DD
= 3.3 V
old
(4)
V
DD
= 3.6 V
Output leakage current on port M
when D path is on
Output leakage current on port D
when M path is on
Y+/Y- Power-Off Leakage
Current
V
Y+/Y-
= 5.25V, V
DD
= 3.3V
SEL = High, V
M+/M-
= 0V
V
Y+/Y-
= 5.25V, V
DD
= 3.3V
SEL = Low, V
D+/D-
= 0V
V
input
= 0V to 3.3V, V
DD
= 0V
I
OZ_M
I
OZ_D
I
OFF
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USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
Power Supply Characteristics
Parameters
I
DD
Description
Power Supply Current
Test Conditions
(1)
V
DD
= 3.3V, OE = GND, V
SEL
= GND or V
DD
Min.
Typ.
1
Max.
2
Units
uA
PI3USB102E
Notes:
1.
For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2.
V
DD
= 3.0 - 5.5V,
T
A
= 25°C ambient.
3.
Measured by the voltage drop between Y+/Y- and the lower of M+/M- and D+/D- at indicated current through the Switch.
4.
When the voltage at Y+/Y- is greater than V
DD
+ 0.2V, over-voltage protection limits the output voltage at M+/- and D+/- to protect connected devices from
damage.
Capacitance
(T
a
= 25°C,
V
DD
= 3.3V, f = 1MHz)
Parameters
(3)
C
IN
C
OFF (M/D)
C
OFF (Y)
C
ON
Parameters
(3)
X
TALK
O
IRR
-3dB BW
-0.5dB BW
T
OVP
V
DSW
Description
Test Conditions
(1)
OE = High
OE = High
V
SEL
= 0V or V
DD
Test Conditions
R
L
= 50Ω, f = 240 MHz
R
L
= 50Ω
R
L
= 50Ω
C
L
= 10 pF, V
Y+/Y-
= 5V,
V
DD
= 3.0 to 3.6V
(6)
C
L
= 10 pF, V
Y+/Y-
= 5V,
V
DD
= 3.0 to 3.6V
(6)
Typ.
(2)
2.2
3.0
5.0
6.0
Min.
Max.
3.2
4.0
6.0
7.0
Typ.
(2)
-29
-28
1,000
275
40
100
3.6
Max.
Units
Input Capacitance
Switch Off Capacitance for M and D ports
Switch Off Capacitance for Y port
Switch Capacitance, Switch ON
Description
Crosstalk
OFF Isolation
–3dB Bandwidth
–0.5dB Bandwidth
Over-Voltage Response Time
(4)
Dynamic Signal Output Swing
(5)
pF
Dynamic Electrical Characteristics Over the Operating Range
Units
dB
MHz
MHz
ns
V
2.7
3.0
Notes:
1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
DD
= 3.3V,
T
A
= 25°C ambient.
3. This parameter is determined by device characterization but is not production tested.
4. Time duration for output voltage higher than V
OVP
when input is connected to 5V.
5. Output voltage observed at M+/M- and D+/D- during over-voltage condition.
6. Tested using a 750 kHz square wave with t
r
= 75 ns and t
f
= 75 ns.
Switching Characteristics
Parameters Description
t
PD
t
PZH
, t
PZL
t
PHZ
, t
PLZ
t
BBM
t
SKb-b
Propagation Delay
(2,3)
Line Enable Time - SEL, OE to D(+/-), M(+/-)
Line Disable Time - SEL, OE to D(+/-), M(+/-)
Break Before Make Delay
Output skew, bit-to-bit (opposite transition of the same
output (t
PHL
-t
PLH
)
(2)
See Test Circuit
for Electrical
Characteristics
0.5
0.5
9.0
8
20
Test Conditions
(1)
Min. Typ. Max.
0.25
50
11.0
Units
ns
ns
ps
Notes:
1.
For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2.
Guaranteed by design.
3.
The switch contributes no propagation delay other than the RC delay of the On-Resistance of the switch and the load capacitance. The time constant for the
switch alone is of the order of 0.25ns for 10pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little
propagation delay to the system. Propagation delay of the switch when used in a system is determined by the driving circuit on the driving side of the switch and
its interactions with the load on the driven side.
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USB 2.0 High-Speed (480 Mbps) Switch with 5V Protection
PI3USB102E
Test Circuit for Dynamic Electrical Characteristics
DUT
Test Circuit for Electrical Characteristics
6.0V
V
DD
200-ohm
Pulse
Generator
R
T
D.U.T.
V
OUT
10pF
200-ohm
Notes:
1. C
L
= Load capacitance: includes jig and probe capacitance.
2. R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse Generator
3. All input impulses are supplied by generators having the following characteristics: Z
O
= 50Ω, t
R
≤ 2.5ns, t
F
≤ 2.5ns.
4. The outputs are measured one at a time with on transition per measurement.
