Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PIMN31
500 mA, 50 V NPN/NPN double resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 01 — 19 June 2007
Product data sheet
1. Product profile
1.1 General description
500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
I
Digital application in automotive and industrial segments
I
Switching loads
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
0.7
9
Typ
-
-
1
10
Max
50
500
1.3
11
Unit
V
mA
kΩ
Per transistor
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
R1
R2
TR2
TR1
R2
R1
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
sym063
3. Ordering information
Table 3.
Ordering information
Package
Name
PIMN31
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
PIMN31
Marking codes
Marking code
4E
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
P
tot
output current
total power dissipation
T
amb
≤
25
°C
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
Max
50
50
5
+12
−5
500
290
Unit
V
V
V
V
V
mA
mW
Per transistor
PIMN31_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
2 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1]
Min
-
-
−65
−65
Max
420
150
+150
+150
Unit
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P
tot
(mW)
400
006aab054
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1. Power derating curve
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
431
105
Unit
K/W
K/W
Per transistor
-
-
298
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PIMN31_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
3 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
10
3
Z
th(j-a)
(K/W)
10
2
0.20
0.10
0.05
10
0.02
0.01
δ
=1
0.75
0.50
0.33
006aaa494
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT457 (SC-74);
typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 50 V; I
B
= 0 A
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 50 mA
I
C
= 50 mA; I
B
= 2.5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 0.3 V; I
C
= 20 mA
Min
-
-
-
70
-
0.3
0.4
0.7
9
-
Typ
-
-
-
-
-
0.6
0.8
1
10
7
Max
100
0.5
0.72
-
0.3
1
1.4
1.3
11
-
pF
V
V
V
kΩ
Unit
nA
µA
mA
Per transistor
PIMN31_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
4 of 11
