PRELIMINARY
SPMQ461-01
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• High Current Switching for Motor Drives and Inverters for
Space Applications.
• Push-Pull Configuration with Freewheeling Diodes.
• Low Saturation Voltage at High Currents.
• Low Mechanical Stress Design.
• Hermetic Sealed Construction for Aerospace Applications.
• Excellent Thermal Management.
• Full Power Screened Hermetic Discretes.
• TX, TXV, and S-Level Screening Available.
• Consult Factory for:
• Faster Switching Speeds;
• Other Bridge Configurations and Terminal Styles.
MAXIMUM RATINGS
CHARACTERISTIC
Collector to Emiter Voltage,
per Leg
Gate to Collector Voltage
Continuous Collector Current,
per Leg
T
B
= 25
o
C
T
B
= 90
o
C
200 AMP/600 VOLTS
HALF BRIDGE
IGBT POWER MODULE
FOR SPACE APPLICATIONS
ASPM
SYMBOL
V
CES
V
GES
I
C1
I
C2
I
CM
I
LM
E
ARV
T
OP
& T
STG
1
JB
P
D1
P
D2
VALUE
600
"20
200
100
300
100
5.6
-55 TO +150
0.28
625
5
UNIT
Volts
Volts
Amps
Amps
Amps
mJ
o
o
Pulse Collector Current,
per Leg
1/
Clamped Inductive Load Current,
per Leg
(T
B
= 125
EC,
V
CC
= 480V, V
GE
= 15V, L = 30uH, R
G
= 10S
Reverse Voltage Avalange Energy,
per Leg
1/
(I
C
= 100A)
Operating and Storage Temperature
Thermal Resistance, Junction to Base,
per Leg
Total Module Dissipation,
per Leg @T
B
= 25
o
C
Dissipation Derating from T
B
= 25
o
C to
T
B
= 150
o
C
,
per Leg
1/
Pulse Duration Limited by T
JMAX
; Repetative Rating
C
C/W
W
W/
o
C
ELECTRICAL SCHEMATIC
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0002B
PRELIMINARY
SPMQ461-01
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
SOLID STATE DEVICES, INC.
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C, per Leg
(Unless Otherwise Specified)
RATING
Collector - Emitter Breakdown Voltage
(I
CES
= 250:A, V
GE
= 0V)
Gate - Emitter Threshold Voltage
(I
C
= 5mA, V
CE
= V
GE
)
Collector-Emitter Saturation Voltage
(I
C
= 100A, V
GE
= 15V)
Gate-Emitter Leakage Current
(V
GE
=
"20V,
V
CE
= 0V)
Collector Leakage Current
(V
CE
= 480V, V
GE
= 0V)
Anti-Parallel Diode Forward Voltage
(I
F
= 100A, T
B
= 25
o
C)
(T
B
= 25
o
C)
(T
B
= 90
o
C)
SYMBOL
MIN
MAX
UNIT
BV
CES
V
GE(th)
V
CE(sat)2
V
CE(sat)1
I
GES
(T
B
= 25
o
C)
(T
B
= 125
o
C)
I
CES1
I
CES1
V
F
R
INSUL1
600
2.0
-
-
-
-
-
-
1
-
6
3.1
2.5
2.0
225
20
1.6
-
Volts
Volts
Volts
:Amps
:Amps
mAmps
Volts
GS
Insulation Resistance
(All terminals to Base @1500V)
PACKAGE OUTLINE: ASPM
Tolerances
(Unless specified):
.XX
".03
.XXX
".010
