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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD6050
High-speed diode
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14
NXP Semiconductors
Product data sheet
High-speed diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage: max. 70 V
•
Repetitive peak reverse voltage: max. 85 V
•
Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The PMBD6050 is a high-speed switching diode fabricated
in planar technology, and encapsulated in a small SOT23
plastic SMD package.
MARKING
3
PMBD6050
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
handbook, halfpage
2
1
2
n.c.
3
MAM185
1
TYPE NUMBER
PMBD6050
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBD6050
MARKING
CODE
(1)
*5A
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 14
2
NXP Semiconductors
Product data sheet
High-speed diode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
note 1; see Fig.2
CONDITIONS
−
−
−
−
MIN.
PMBD6050
MAX.
85
70
215
500
V
V
UNIT
mA
mA
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
2004 Jan 14
3
NXP Semiconductors
Product data sheet
High-speed diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
100
50
1.5
4
715
855
1
1.25
CONDITIONS
MAX.
PMBD6050
UNIT
mV
mV
V
V
nA
µA
pF
ns
V
fr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2004 Jan 14
4
嵌入式系统
