PMD2001D
MOSFET driver
Rev. 02 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Switching transistors in push-pull configuration
Application-optimized pinout
Space-saving solution
Internal connections to minimize layout effort
Reduces component count
1.3 Applications
I
MOSFET driver
I
Power bipolar transistor driver
I
Output current booster for operational amplifier
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
40
0.6
1
Unit
V
A
A
Per transistor; for the PNP transistor with negative polarity
NXP Semiconductors
PMD2001D
MOSFET driver
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
base TR1, TR2
collector TR2
collector TR2
emitter TR1, TR2
collector TR1
collector TR1
1
2
3
006aaa659
Simplified outline
6
5
4
Symbol
6
5
4
TR1
TR2
1
2
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PMD2001D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
9E
Type number
PMD2001D
PMD2001D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
2 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
I
C
I
CM
I
BM
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
single pulse;
t
p
≤
1 ms
Per device
P
tot
total power dissipation
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
single pulse;
t
p
≤
1 ms
Min
-
-
-
-
-
-
Max
40
40
0.6
1
0.1
0.2
Unit
V
V
A
A
A
A
Per transistor; for the PNP transistor with negative polarity
-
-
-
-
−65
−65
320
400
540
150
+150
+150
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
600
(1)
006aaa768
P
tot
(mW)
400
(2)
(3)
200
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm
2
(3) FR4 PCB, standard footprint
Fig 1.
PMD2001D_2
Power derating curves
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
3 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
390
315
230
Unit
K/W
K/W
K/W
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aaa769
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
4 of 15
NXP Semiconductors
PMD2001D
MOSFET driver
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aaa770
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1cm
2
Fig 3.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa771
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
5 of 15
