PMEG2005AESF
13 February 2015
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
•
•
•
•
•
Average forward current I
F(AV)
≤ 0.5 A
Reverse voltage V
R
≤ 20 V
Low forward voltage typ. V
F
= 245 mV
Low reverse current typ. I
R
= 5 µA
Package height typ. 0.3 mm
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Ultra high speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
Quick reference data
Parameter
average forward
current
Conditions
δ = 0.5; f = 20 kHz; T
amb
= 115 °C;
square wave
δ = 0.5; f = 20 kHz; T
sp
= 145 °C;
square wave
V
R
V
F
I
R
t
rr
reverse voltage
forward voltage
reverse current
reverse recovery time
T
j
= 25 °C
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
V
R
= 10 V; T
j
= 25 °C; pulsed
I
F
= 500 mA; I
R
= 500 mA;
I
R(meas)
= 100 mA; T
j
= 25 °C
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
245
5
1.9
Max
0.5
0.5
20
310
25
-
Unit
A
A
V
mV
µA
ns
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NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
Simplified outline
1
2
sym001
Graphic symbol
1
2
Transparent
top view
DSN0603-2 (SOD962-2)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG2005AESF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
Type number
7. Marking
Table 4.
Marking codes
Marking code
6
Type number
PMEG2005AESF
PMEG2005AESF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
13 February 2015
2 / 14
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
≤ 140 °C; δ = 1
δ = 0.5; f = 20 kHz; T
amb
= 115 °C;
square wave
δ = 0.5; f = 20 kHz; T
sp
= 145 °C;
square wave
I
FRM
I
FSM
P
tot
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
t
p
≤ 1 ms; δ ≤ 0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[2]
[3]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-55
-65
Max
20
0.71
0.5
0.5
2
4.5
405
660
1200
150
150
150
Unit
V
A
A
A
A
A
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm each.
2
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
PMEG2005AESF
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
310
190
105
40
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm each.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of anode tab.
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
2
Product data sheet
13 February 2015
3 / 14
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
10
3
aaa-006823
Z
th(j-a)
(K/W)
duty cycle =
1
0.75
0.5
0.25
0.1
10
2
0.33
0.2
0.05
0.02
0
10
10
-3
0.01
10
-2
10
-1
1
10
10
2
10
3
t
p
(s)
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
aaa-006824
Z
th(j-a)
(K/W)
duty cycle =
0.75
0.33
0.2
0.05
1
10
2
0.5
0.25
0.1
0.02
0.01
0
10
10
-3
10
-2
10
-1
1
2
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005AESF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
13 February 2015
4 / 14
NXP Semiconductors
PMEG2005AESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
10
2
aaa-006825
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
0
10
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005AESF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
13 February 2015
5 / 14
