DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG2015EV
Low V
F
MEGA Schottky barrier
diode
Product data sheet
Supersedes data of 2003 May 21
2003 Jun 03
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
FEATURES
•
Forward current: 1.5 A
•
Reverse voltage: 20 V
•
Very low forward voltage
•
Ultra small plastic SMD package
•
Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC-DC conversion
•
Switch mode power supply
•
Inverse polarity protection
•
Low power consumption applications.
handbook, halfpage
6
PMEG2015EV
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
cathode
cathode
anode
anode
cathode
cathode
5
4
1, 2
5, 6
3, 4
MHC310
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
1
2
3
Marking code:
F5.
Fig.1
Simplified outline (SOT666 and symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
I
FRM
T
stg
T
j
T
amb
Note
1. Only valid if pins 3 and 4 are connected in parallel.
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
T
s
< 55
°C
t
p
= 8 ms square wave; note 1
t
p
= 1 ms;
δ
=
≤
0.25
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
MAX.
20
1.5
10
4.5
+150
150
+125
V
A
A
A
°C
°C
°C
UNIT
2003 Jun 03
2
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2; note 1
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 000 mA
I
F
= 1 500 mA
I
R
continuous reverse current
see Fig.3; note 2
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
C
d
Notes
1. Only valid if pins 1, 2 and 5, 6 are soldered on 1 cm
2
copper solder land.
2. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Refer to SOT666 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
note 3
CONDITIONS
diode capacitance
5
7
10
240
300
480
530
PMEG2015EV
TYP.
MAX.
270
350
550
660
10
20
50
25
UNIT
mV
mV
mV
mV
μA
μA
μA
pF
V
R
= 5 V; f = 1 MHz; see Fig.4 19
VALUE
405
215
80
UNIT
K/W
K/W
K/W
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm
2
.
3. Soldering point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jun 03
3
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
GRAPHICAL DATA
PMEG2015EV
handbook, halfpage
10
4
MLE111
IF
handbook, halfpage
10
5
MHC312
(mA)
10
3
IR
(μA)
10
4
(1)
10
2
(1)
(2)
(3)
10
3
(2)
10
10
2
(3)
1
10
10
−1
0
0.2
0.4
VF (V)
0.6
1
0
5
10
15
20
VR (V)
25
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
80
MHC313
Cd
(pF)
60
40
20
0
0
5
10
15
VR (V)
20
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 03
4
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
PACKAGE OUTLINE
PMEG2015EV
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Jun 03
5
微控制器 MCU
