PMN70XPE
6 July 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
•
Low threshold voltage
•
Very fast switching
•
Trench MOSFET technology
•
2 kV ESD protection
1.3 Applications
•
Relay driver
•
High-speed line driver
•
High-side loadswitch
•
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -2 A; T
j
= 25 °C
[1]
Conditions
T
amb
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
-20
12
-4.1
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
70
85
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Nexperia
PMN70XPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D
D
G
S
D
D
drain
drain
gate
source
drain
drain
S
017aaa259
Simplified outline
6
5
4
Graphic symbol
D
1
2
3
G
TSOP6 (SOT457)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMN70XPE
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
WF
Type number
PMN70XPE
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
PMN70XPE
All information provided in this document is subject to legal disclaimers.
Conditions
T
amb
= 25 °C
Min
-
-12
[1]
[1]
[1]
Max
-20
12
-4.1
-3.2
-2
-12.8
500
1220
6250
Unit
V
V
A
A
A
A
mW
mW
mW
-
-
-
-
[2]
[1]
-
-
-
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
2 / 14
Nexperia
PMN70XPE
20 V, single P-channel Trench MOSFET
Symbol
T
j
T
amb
T
stg
I
S
V
ESD
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-55
-55
-65
Max
150
150
150
Unit
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-1.3
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
120
P
der
(%)
80
[3]
-
2000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
017aaa123
2
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMN70XPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
3 / 14
Nexperia
PMN70XPE
20 V, single P-channel Trench MOSFET
-10
2
I
D
(A)
-10
Limit R
DSon
= V
DS
/I
D
017aaa648
-1
t
p
= 1 ms
t
p
= 10 ms
-10
-1
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 100 ms
-10
-2
0
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
216
89
55
15
Max
250
102
63
20
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s
PMN70XPE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
4 / 14
Nexperia
PMN70XPE
20 V, single P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa649
duty cycle = 1
0.75
0.33
0.2
0.05
0.01
0.5
0.25
0.1
10
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
10
0.05
0
0.02
0.01
0.5
0.25
0.1
017aaa650
1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
Conditions
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= -20 V; V
GS
= 0 V; T
amb
= 150 °C
PMN70XPE
All information provided in this document is subject to legal disclaimers.
Min
-20
-0.75
-
-
Typ
-
-1
-
-
©
Max
-
-1.25
-1
-10
Unit
V
V
µA
µA
5 / 14
Static characteristics
Nexperia B.V. 2017. All rights reserved
Product data sheet
6 July 2012
嵌入式系统
