PMV50EPEA
30 June 2016
30 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
•
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -4.2 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
-30
20
-4.2
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
35
45
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Nexperia
PMV50EPEA
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
S
017aaa259
Simplified outline
3
Graphic symbol
D
G
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMV50EPEA
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMV50EPEA
[1]
DQ%
% = placeholder for manufacturing site code
PMV50EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2016
2 / 16
Nexperia
PMV50EPEA
30 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
I
DM
E
DS(AL)S
P
tot
peak drain current
non-repetitive drain-source
avalanche energy
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
j(init)
= 25 °C; I
D
= -1.3 A; DUT in
avalanche (unclamped)
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
Max
-30
20
-4.2
-2.7
-16.9
19.5
480
1.2
6.95
150
150
150
Unit
V
V
A
A
A
mJ
mW
W
W
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-4
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
[3]
-
2000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
2
PMV50EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2016
3 / 16
Nexperia
PMV50EPEA
30 V, P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
-10
2
I
D
(A)
-10
Limit R
DSon
= V
DS
/I
D
aaa-023372
t
p
= 10 µs
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
-1
DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
-10
-1
DC; T
sp
= 25 °C
-10
-2
-10
-1-
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
227
91
Max
261
104
Unit
K/W
K/W
PMV50EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2016
4 / 16
Nexperia
PMV50EPEA
30 V, P-channel Trench MOSFET
Symbol
R
th(j-sp)
Parameter
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
-
Typ
13
Max
18
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-023373
2
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.50
0.25
0.10
0.05
0.75
0.33
0.20
10
0.02
0
0.01
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.50
0.25
10
0.10
0.02
0
1
10
-3
0.01
10
-2
10
-1
2
aaa-023374
0.75
0.33
0.20
0.05
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV50EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 June 2016
5 / 16
