PMV50UPE
20 July 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
•
3 kV ESD protected
•
Trench MOSFET technology
•
Low threshold voltage
1.3 Applications
•
Relay driver
•
High-side loadswitch
•
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -3.2 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
-20
8
-3.7
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
50
66
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
G
Simplified outline
3
Graphic symbol
D
TO-236AB (SOT23)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Package
Name
PMV50UPE
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMV50UPE
[1]
%CZ
% = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
P
tot
PMV50UPE
Conditions
T
j
= 25 °C
Min
-
-8
[1]
[1]
[1]
Max
-20
8
-3.7
-3.2
-2
-12.8
500
Unit
V
V
A
A
A
A
mW
-
-
-
-
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
All information provided in this document is subject to legal disclaimers.
[2]
-
© NXP B.V. 2012. All rights reserved
Product data sheet
20 July 2012
2 / 14
NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
[1]
Min
-
-
-55
-55
-65
Max
955
3570
150
150
150
Unit
mW
mW
°C
°C
°C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-1
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
120
P
der
(%)
80
[3]
-
3000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Measured between all pins.
017aaa123
2
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
PMV50UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
20 July 2012
3 / 14
NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
-10
2
I
D
(A)
-10
Limit R
DSon
= V
DS
/I
D
017aaa691
t
p
= 1 ms
-1
DC; T
sp
= 25 °C
-10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 10 ms
t
p
= 100 ms
-10
-2
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
218
114
80
30
Max
250
130
92
35
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s.
2
2
PMV50UPE
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© NXP B.V. 2012. All rights reserved
Product data sheet
20 July 2012
4 / 14
NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa692
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10
0.05
0.02
0
0.01
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
10
0.05
0.5
0.25
0.1
0.02
0.01
017aaa693
0
1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
Conditions
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= -20 V; V
GS
= 0 V; T
j
= 150 °C
PMV50UPE
All information provided in this document is subject to legal disclaimers.
Min
-20
-0.47
-
-
Typ
-
-0.6
-
-
Max
-
-0.9
-1
-10
Unit
V
V
µA
µA
5 / 14
Static characteristics
© NXP B.V. 2012. All rights reserved
Product data sheet
20 July 2012
