PN3642
PN3642
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
45
60
5.0
500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= 65°C
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
I
C
= 150mA, I
B
= 15mA
V
CB
= 10V, f = 140KHz
I
C
= 50mA, V
CE
= 5.0V, f = 100MHz
V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
1.5
10
60
dB
%
40
15
Min.
45
60
5.0
50
1.0
120
0.22
8.0
V
pF
Max.
Units
V
V
V
nA
µA
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
V
(BR)EBO
I
CES
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
On Characteristics
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
fe
G
pe
η
Small Signal Current Gain
Amplifier Power Gain
Collector Efficientcy
* Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN3642
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN3642
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
