MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21997-4
INTEGRATED POWER FUNCTIONS
600V/30A low-loss CSTBT inverter bridge for three
phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
•
•
•
•
•
For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
Fault signaling : Corresponding to a SC fault (N-side IGBT), a UV fault (N-side supply).
Input interface : 3~5V line (High Active).
UL Recognized : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES (PS21997-4)
38
±0.5
20×1.778(=35.56)
35
±0.3
A
B
TERMINAL CODE
3.5
16-0.5
1.5
±0.05
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
(VNC)
V
UFB
V
VFB
V
WFB
U
P
V
P
W
P
V
P1
V
NC
*
U
N
V
N
W
N
V
N1
F
O
CIN
V
NC
*
NC
N
N
N
W
V
U
P
NC
Dimensions in mm
0.28
1.778
±0.2
17
1
(1)
14.4
±0.5
0.4
14.4
±0.5
.6
R1
2-
QR
Code
3 MIN
Type name
Lot No.
29.2
±0.5
24
±0.5
(3.5)
0.8
HEAT SINK SIDE
12
18
0.28
2.54
±0.2
14×2.54 (=35.56)
0.5
0.5
0.5
25
8-0.6
4-C1.2
(3.3)
2.5 MIN
0.5
(2.656)
(0~5°)
0.4
1.5 M
IN
9.5
±0.5
5.5
±0.5
(1.2)
(2.756)
DETAIL A
HEAT SINK SIDE
(1.2)
DETAIL B
*) Two V
NC
terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Note :
CSTBT is registered trademark of MITSUBISHI ELECTRIC CORPORATION in Japan.
Sep. 2008
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 LONG TERMINAL TYPE PACKAGE OUTLINES (PS21997-4A)
38
±0.5
20×1.778(=35.56)
35
±0.3
A
B
Dimensions in mm
TERMINAL CODE
3.5
16-0.5
(1)
0.28
1.778
±0.2
1.5
±0.05
0.4
17
1
14.4
±0.5
.6
R1
2-
QR
Code
3 MIN
Type name
Lot No.
0.8
HEAT SINK SIDE
18
0.28
2.54
±0.2
14×2.54 (=35.56)
0.5
0.5
0.5
25
8-0.6
4-C1.2
0.4
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
(VNC)
V
UFB
V
VFB
V
WFB
U
P
V
P
W
P
V
P1
V
NC
*
U
N
V
N
W
N
V
N1
F
O
CIN
V
NC
*
NC
N
N
N
W
V
U
P
NC
14.4
±0.5
12
29.4
±0.5
24
±0.5
(3.5)
(3.3)
0.5
2.5 MIN
(0~5°)
1.5 M
(2.656)
14
±0.5
IN
5.5
±0.5
(1.2)
(2.756)
DETAIL A
HEAT SINK SIDE
(1.2)
DETAIL B
*) Two V
NC
terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Fig. 3 ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21997-4C)
38
±0.5
20×1.778(=35.56)
35
±0.3
A
B
3.5
1.5
±0.05
Dimensions in mm
TERMINAL CODE
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
(VNC)
V
UFB
V
VFB
V
WFB
U
P
V
P
W
P
V
P1
V
NC
*
U
N
V
N
W
N
V
N1
F
O
CIN
V
NC
*
NC
N
N
N
W
V
U
P
NC
17
1
(1)
18.9
±0.5
14.4
±0.5
33.7
±0.5
R
2-
14.4
±0.5
12
1.
6
QR
Code
3 MIN
Type name
Lot No.
29.2
±0.5
24
±0.5
(3.5)
0.8
HEAT SINK SIDE
0.4
0.4
0.28
1.778
±0.2
16-0.5
18
0.28
2.54
±0.2
14×2.54 (=35.56)
25
8-0.6
4-C1.2
0.5
0.5
0.5
(2.656)
(0~5°)
(0~5°)
0.4
1.5 M
IN
9.5
±0.5
5.5
±0.5
(1.2)
(2.756)
DETAIL A
HEAT SINK SIDE
(1.2)
DETAIL B
*) Two V
NC
terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Sep. 2008
2
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 4 BOTH SIDES ZIGZAG TERMINAL TYPE PACKAGE OUTLINES (PS21997-4W)
38
±0.5
20×1.778(=35.56)
35
±0.3
A
B
3.5
1.5
±0.05
TERMINAL CODE
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
(VNC)
V
UFB
V
VFB
V
WFB
U
P
V
P
W
P
V
P1
V
NC
*
U
N
V
N
W
N
V
N1
F
O
CIN
V
NC
*
NC
N
(N)
N
W
V
U
P
NC
Dimensions in mm
17
1
(1)
17.4
±0.5
14.4
±0.5
35.2
±0.6
17.4
14.4
±0.5
±0.5
.6
R1
2-
QR
Code
3 MIN
Type name
Lot No.
29.2
±0.5
24
±0.5
(3.5)
0.8
HEAT SINK SIDE
12
(1.8)
14×2.54 (=35.56)
0.5
0.5
0.5
2.5 MIN
(0~5°)
0.28
2.54
±0.25
7-0.6
4-C1.2
(0~5°)
18
25
0.4
0.4
0.4
0.4
0.28
1.778
±0.25
16-0.5
(2.656)
1.5 M
IN
11
±0.5
5.5
±0.5
(1.2)
(2.756)
DETAIL A
HEAT SINK SIDE
(1.2)
DETAIL B
*) Two V
NC
terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
QR Code is registered trademark of DENSO WAVE INCORPORATED in JAPAN and other countries.
Fig. 5 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
C1 : Electrolytic type with good temperature and frequency
characteristics. The capacitance also depends on the PWM
control strategy of the application system.
C2 : 0.22µ-2µF ceramic capacitor with good temperature,
frequency and DC bias characteristics.
D1 : Bootstrap diode (V
RRM
=600V or more. trr=100ns or less)
D2 : Zener diode (24V/1W)
P-side input (PWM)
Input signal
conditioning
Level shift
UV lockout
circuit
Input signal
conditioning
Level shift
Input signal
conditioning
Level shift
C2
C1
D2 D1
Inrush limiting circuit
P
Drive circuit
Drive circuit
Drive circuit
P-side IGBT
S
DIPIPM
AC line input
U
V
W
M
AC output
Z
C
V
NC
N1
N
N-side IGBT
S
CIN
Z : Surge absorber
C : AC filter(ceramic capacitor 2.2n -6.5nF)
(Common-mode noise filter)
Drive circuit
Input signal conditioning
Fo logic
Protection
circuit (SC)
UV lockout
circuit
N-side input (PWM)
F
O
F
O
output (5V line)
V
NC
(15V line)
D2
C2
C1
V
D
Sep. 2008
3
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 6 EXTERNAL PART OF THE DIPIPM PROTECTION CIRCUIT
DIPIPM
Drive circuit
P
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the N-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the N-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
I
C
(A)
SC Protection
Trip Level
P-side IGBT
S
U
V
W
N-side IGBT
S
External protection circuit
N1
Shunt Resistor
(Note 1)
A
N
V
NC
CIN
B
Drive circuit
Collector current
waveform
C R
C
Protection circuit
(Note 2)
0
2
t
w
(µs)
Note1:
In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs.
2:
To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
MAXIMUM RATINGS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CC
V
CC(surge)
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-N
Applied between P-N
T
C
= 25°C
T
C
= 25°C, less than 1ms
T
C
= 25°C, per 1 chip
(Note 1)
Ratings
450
500
600
30
60
47.6
–20~+125
Unit
V
V
V
A
A
W
°C
Note 1 :
The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@ T
C
≤
100°C). However, to
ensure safe operation of the DIPIPM, the average junction temperature should be limited to T
j(ave)
≤
125°C (@ T
C
≤
100°C).
CONTROL (PROTECTION) PART
Symbol
V
D
V
DB
V
IN
V
FO
I
FO
V
SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V
P1
-V
NC
, V
N1
-V
NC
Applied between V
UFB
-U, V
VFB
-V, V
WFB
-W
Applied between U
P
, V
P
, W
P
, U
N
, V
N
,
W
N
-V
NC
Applied between F
O
-V
NC
Sink current at F
O
terminal
Applied between CIN-V
NC
Ratings
20
20
–0.5~V
D
+0.5
–0.5~V
D
+0.5
1
–0.5~V
D
+0.5
Unit
V
V
V
V
mA
V
Sep. 2008
4
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
TOTAL SYSTEM
Parameter
Self protection supply voltage limit
V
CC(PROT)
(short circuit protection capability)
Module case operation temperature
T
C
T
stg
Storage temperature
V
iso
Isolation voltage
Symbol
Condition
V
D
= 13.5~16.5V, Inverter part
T
j
= 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
V
rms
Note 2:
T
C
measurement point
Control terminals
DIPIPM
11.6mm
3mm
IGBT chip position
FWDi chip position
Power terminals
T
C
point
Heat sink side
THERMAL RESISTANCE
Symbol
R
th(j-c)Q
R
th(j-c)F
Parameter
Junction to case thermal
resistance
(Note 3)
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Min.
—
—
Limits
Typ.
—
—
Max.
2.1
3.0
Unit
°C/W
°C/W
Note 3 :
Grease with good thermal conductivity and long-term quality should be applied evenly with +100µm~+200µm on the contacting
surface of DIPIPM and heat sink.
The contacting thermal resistance between case and heat sink (R
th(c-f)
) is determined by the thickness and the thermal conductivity of
the applied grease.
For reference, R
th(c-f)
(per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/mK.
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-emitter saturation
voltage
FWDi forward voltage
Condition
I
C
= 30A, T
j
= 25°C
V
D
= V
DB
= 15V
V
IN
= 5V
I
C
= 30A, T
j
= 125°C
T
j
= 25°C, –I
C
= 30A, V
IN
= 0V
V
CC
= 300V, V
D
= V
DB
= 15V
I
C
= 30A, T
j
= 125°C, V
IN
= 0
↔
5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
0.70
—
—
—
—
—
—
Limits
Typ.
1.90
2.00
1.70
1.30
0.30
0.40
1.70
0.40
—
—
Max.
2.50
2.60
2.20
1.90
—
0.60
2.65
1.00
1
10
Unit
V
V
µs
µs
µs
µs
µs
mA
Switching times
V
CE
= V
CES
Sep. 2008
5