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PS2505-2-SMT&R

Optocoupler - Transistor Output, 2 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-8

器件类别:光电子/LED    光电   

厂商名称:Isocom Components

厂商官网:http://www.isocom.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Isocom Components
Reach Compliance Code
unknown
其他特性
UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min
80 V
配置
SEPARATE, 2 CHANNELS
当前传输比率-最小值
80%
标称电流传输比
80%
最大暗电源
100 nA
最大正向电流
0.05 A
最大正向电压
1.4 V
最大绝缘电压
5300 V
JESD-609代码
e3
安装特点
SURFACE MOUNT
元件数量
2
最高工作温度
100 °C
最低工作温度
-30 °C
光电设备类型
AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散
0.15 W
表面贴装
YES
端子面层
TIN
文档预览
PS2505-1X, PS2505-2X, PS2505-4X
PS2505-1, PS2505-2, PS2505-4
HIGH DENSITY A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
Package code " EE "
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
Certified to EN60950 by
Nemko - Certificate No. P01102465
PS2505-1X
PS2505-1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
4.0
3.0
0.5
0.26
7.62
13°
Max
l
3.0
DESCRIPTION
The PS2505-1, PS2505-2, PS2505-4 series of
3.35
0.5
optically coupled isolators consist of two infrared
PS2505-2X
light emitting diodes connected in inverse parallel
PS2505-2
2.54
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
7.0
6.0
1
2
3
4
7.62
8
7
6
5
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
AC or polarity insensitive input
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Telephone sets, Telephone exchangers
l
Signal transmission between systems of
different potentials and impedances
1.2
10.16
9.16
4.0
3.0
0.5
0.5
3.35
3.0
13°
Max
0.26
1
2
3
4
5
7.0
6.0 6
7
8
16
15
14
13
12
11
10
9
7.62
13°
Max
0.26
PS2505-4X
PS2505-4
2.54
SURFACE MOUNT
OPTION SM
OPTION G
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
4.0
3.0
0.5
1.25
0.75
0.26
10.16
3.0
0.5 3.35
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
3/10/07
DB92393m-AAS/A5
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ± 10mA
80V
6V
50mA
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
80
6
100
V
V
nA
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
± 5mAI
F
, 5V V
CE
± 10mAI
F
, 2mAI
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2)
PS2505-1, PS2505-2, PS2505-4
80
600
%
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Rise Time
Output Fall Time
tr
tf
5300
7500
5x10
10
4
3
0.3
V
V
RMS
V
PK
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory
3/10/07
DB92393m-AAS/A5
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector-emitter saturation voltage V
CE(SAT)
(V)
6
5
4
3
2
1
0
0
Collector-emitter Saturation
Voltage vs. Forward Current
=1mA
2mA
3mA
5mA
8mA
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Ic
T
A
= 25°C
5
10
15
Forward current I
F
(±mA)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
±50
±30
±20
±15
20
10
0
±10
I
F
= ±5mA
Forward current I
F
(±mA)
50
Collector current I
C
(mA)
-30
0
25
50
75
100
125
40
30
40
30
20
10
0
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= ±10mA
I
C
= 2mA
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(±mA)
DB92393m-AAS/A5
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
3/10/07
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