DATA SHEET
PHOTOCOUPLER
PS2535-1,PS2535L-1
HIGH COLLECTOR TO EMITTER VOLTAGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SERIES
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for
surface mount.
−NEPOC
Series−
FEATURES
• High collector to emitter voltage (V
CEO
= 350 V)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
<R>
<R>
• Ordering number of taping product: PS2535L-1-F3: 2 000 pcs/reel
• Safety standards
• UL approved: No. E72422
• BSI approved: No. 8221/8222
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
PIN CONNECTION
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PN10447EJ03V0DS (3rd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
1999, 2009
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PS2535-1,PS2535L-1
<R>
PACKAGE DIMENSIONS (Unit : mm)
DIP Type
PS2535-1
4.6±0.35
4 3
6.5±0.5
1 2
7.62
3.2±0.4 4.15±0.4
3.5±0.3
1.25±0.15
0 to 15°
+0.1
0.25
–0.05
0.50±0.10
0.25
M
2.54
Lead Bending Type
PS2535L-1
4.6±0.35
4
6.5±0.5
3
1
3.5±0.3
2
0.25
+0.1
–0.05
0.1
+0.1
–0.05
1.25±0.15
0.25
M
2.54
0.15
0.9±0.25
9.60±0.4
<R>
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Outer Creepage Distance
Inner Creepage Distance
Isolation Thickness
Unit (MIN.)
7 mm
7 mm
4 mm
0.4 mm
2
Data Sheet PN10447EJ03V0DS
PS2535-1,PS2535L-1
<R>
MARKING EXAMPLE
No. 1 pin
Mark
2535
NJ931
Assembly Lot
N
J
9 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Made in Japan
J
Data Sheet PN10447EJ03V0DS
3
PS2535-1,PS2535L-1
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
PS2535-1
PS2535L-1
PS2535L-1-F3
PS2535-1-V
PS2535L-1-V
PS2535L-1-V-F3
PS2535-1-A
PS2535L-1-A
PS2535L-1-F3-A
PS2535-1-V-A
PS2535L-1-V-A
PS2535L-1-V-F3-A
Embossed Tape 2 000 pcs/reel
Embossed Tape 2 000 pcs/reel
Magazine case 100 pcs
DIN EN60747-5-2
(VDE0884 Part2)
Approved (Option)
Pb-Free
Magazine case 100 pcs
Packing Style
Safety Standard
Approval
Standard products
(UL, BSI approved)
Application Part
*1
Number
PS2535-1
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Parameter
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
I
F
V
R
Ratings
50
6
0.7
70
0.5
350
0.3
120
2.0
200
5 000
−55
to +100
−55
to +150
Unit
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
Δ
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Δ
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
μ
s, Duty Cycle = 1%
*2
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10447EJ03V0DS
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Coupled
Collector to Emitter
Dark Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
Symbol
V
F
I
R
C
t
I
CEO
CTR
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
I
F
= 10 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.2
MAX.
1.4
5
Unit
V
μ
A
pF
V = 0 V, f = 1.0 MHz
V
CE
= 350 V, I
F
= 0 mA
I
F
= 1 mA, V
CE
= 2 V
I
F
= 1 mA, I
C
= 2 mA
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 5 V, I
C
= 10 mA, R
L
= 100
Ω
10
11
15
400
400
1 500
5 500
1.0
nA
%
V
Ω
0.6
18
5
pF
μ
s
*2
*1
CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2
Test circuit for switching time
Pulse input
I
F
PW = 1 ms,
Duty cycle = 1/10
In monitor
50
Ω
V
OUT
R
L
= 100
Ω
V
CC
Data Sheet PN10447EJ03V0DS
5
