Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 132
PSKH 132
I
TRMS
I
TAVM
V
RRM
= 2x 300 A
= 2x 130 A
= 800-1800 V
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
1
Version 1
PSKT 132/08io1
PSKT 132/12io1
PSKT 132/14io1
PSKT 132/16io1
PSKT 132/18io1
Version 1
PSKH
PSKH
PSKH
PSKH
PSKH
132/08io1
132/12io1
132/14io1
132/16io1
132/18io1
2
3
67
5
4
3
6 7 1
5 4 2
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300
130
4750
5080
4230
4530
113 000
108 000
89 500
86 200
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
PSKT
Version 1
3
1
5 42
PSKH
Version 1
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 500 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.5 A
non repetitive, I
T
= 500 A
di
G
/dt = 0.5 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 500 µs
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
●
●
●
●
●
●
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
●
●
●
●
●
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
●
●
●
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling capability
Reduced protection circuits
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 300 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
Characteristic Values
10
1.36
0.8
1.5
2.5
2.6
150
200
0.2
10
300
200
2
150
550
235
0.23
0.115
0.33
0.165
12.7
9.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
T
VJ
= 25°C; t
P
= 30 µs; V
D
= 6 V
I
G
= 0.5 A; di
G
/dt = 0.5 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.5 A; di
G
/dt = 0.5 A/µs
T
VJ
= T
VJM
; I
T
= 160 A, t
P
= 200 µs; -di/dt = 10 A/µs typ.
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 300 A, -di/dt = 50 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT
PSKH
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
4000
I
TSM
A
3000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
2000
i
2
t
10
6
A
2
s
10
5
T
VJ
= 45°C
T
VJ
= 125°C
1000
0
0.001
0.01
0.1
s
t
1
10
4
1
t
2
ms
10
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4 i t versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3xPSKT132 or
3xPSKH 132
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3xPSKT132 or
3xPSKH 132
Z
thJC
(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.230
0.244
0.255
0.283
0.321
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.0095
0.0175
0.203
t
i
(s)
0.001
0.065
0.4
Z
thJK
(t)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.330
0.344
0.355
0.383
0.421
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0095
0.0175
0.203
0.1
t
i
(s)
0.001
0.065
0.4
1.29
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
