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PT501A

PHOTO TRANS CLR LEN 800NM TO-18

器件类别:传感器   

厂商名称:Sharp Microelectronics

器件标准:

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器件:PT501A

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器件参数
参数名称
属性值
电压 - 集射极击穿(最大值)
45V
电流 - 集电极(Ic)(最大值)
10mA
电流 - 暗(Id)(最大值)
100nA
波长
800nm
视角
12°
功率 - 最大值
75mW
安装类型
通孔
朝向
顶视图
工作温度
-25°C ~ 125°C(TA)
封装/外壳
TO-18-2 金属罐
文档预览
PT501/PT510
PT501/PT510
s
Features
1. Narrow acceptance (
∆θ
: TYP. ± 6˚ )
2. TO -18 type standard package
3. With base terminal :
PT510
TO-18 Type Narrow
Acceptance Phototransistor
s
Outline Dimensions
φ
4.7
±
0.1
Glass
lens
6.8
MAX.
4.5
6.8
MAX.
4.5
PT501
( Unit : mm )
φ
4.7
±
0.1
Glass
lens
PT510
s
Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
φ
0.45
2.5
20.0
±
1.0
13
φ
0.45
2.5
1.
0
0
3
2
1.
φ
2.5
1
2 1
1.0
45˚
φ
5.7
MAX.
1
45˚
1.0
φ
5.7
MAX.
1
1 Collector
2 Emitter
2
2
3
1 Collector (Case )
2 Base
3 Emitter
s
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Emitter-base voltage
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
V
CEO
V
ECO
V
CBO
V
EBO
P
C
T
opr
T
stg
T
sol
PT501
45
6
-
-
75
- 25 to + 125
- 55 to + 150
260
PT510
35
6
35
6
75
- 25 to + 125
- 55 to + 150
260
( Ta = 25˚C )
Unit
V
V
V
V
mW
˚C
˚C
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s
Electro-optical Characteristics
Parameter
*2
( Ta = 25˚C )
Symbol
I
C
Conditions
V
CE
= 5V, E
e
= 10mW/cm
2
MIN.
2.5
-
-
-
-
-
TYP.
PT501
PT510
2 x 10
- 9
0.2
800
PT501
PT510
PT501
PT510
MAX.
10
20
-
10
- 7
-
-
10
2
10
3
-
-
Unit
mA
A
V
nm
µ
s
µ
s
Collector current
Collector dark current
*2
Collector-emitter saturation voltage
Peak sensitivity wavelength
Response
time
Rise time
Fall time
V
CE
= 30V, E
e
= 0
I
CEO
V
CE ( sat )
I
C
= 1mA, E
e
= 10mW/cm
2
λ
P
t
r
t
f
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω (
PT501
: 1k
)
*2 E
e
: Irradiance by CIE standard light source A ( tungsten lamp )
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT501/PT510
*2 Classification Table of Collector Current( I
C
)
Model No.
PT501A
PT501B
PT501C
at V
CE
= 5V, E
e
= 10mW/cm
2
, Ta = 25˚C
I
C
( mA )
20 to 80
10 to 25
2.5 to 15
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
100
Collector power dissipation P
C
( mW )
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10
-4
(A)
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
V
CE
= 30V
60
40
20
Collector dark current I
CEO
80
75
0
- 25
0
25
50
75
100
Ambient temperature T
a
( ˚C )
125
10
-11
- 25
0
25 50 75 100 125
Ambient temperature T
a
( ˚C )
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
V
CE
= 5V
140
E
e
= 10mW/cm
2
120
100
80
60
40
20
0
Fig.4-a Collector Current vs. Irradiance
(PT501 )
20
V
CE
= 5V
T
a
= 25˚C
Relative collector current ( % )
Collector current I
C
( mA )
15
10
5
0
10
20
30
40
50
60
Ambient temperature T
a
( ˚C )
70
0
0
2
4
6
Irradiance E
e
( mW/cm
2
)
8
10
PT501/PT510
Fig.4-b Collector Current vs. Irradiance
(PT510 )
20
V
CE
= 5V
T
a
= 25˚C
R
BE
=
500kΩ
300kΩ
200kΩ
Fig.5-a Collector Current vs.
Collector-emitter Voltage
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Collector current I
C
( mA )
P
C
( MAX. )
E
e
= 10mW/cm
2
7.5mW/cm
2
5mW/cm
2
2.5mW/cm
2
(PT501 )
T
a
= 25˚C
Collector current I
C
( mA )
15
10
100kΩ
5
50kΩ
0
2
4
6
8
10
12
14
16
Collector-emitter voltage V
CE
( V )
18
20
0
0
2
4
Irradiance E
e
6
( mW/cm
2
)
8
10
Fig.5-b Collector Current vs.
Collector-emitter Voltage
14
T
a
= 25˚C
Collector current I
C
( mA )
12
Fig. 6 Spectral Sensitivity
(PT510 )
100
P
C
( MAX. )
T
a
= 25˚C
80
Relative sensitivity ( % )
10
0
400
600
800
1000
Wavelength
λ
( nm )
1200
10
8
6
4
2
0
I
B
= 10
µ
A
9
µ
A
8
µ
A
7
µ
A
6
µ
A
5
µ
A
4
µ
A
3
µ
A
2
µ
A
1
µ
A
0
2
4
6
8
Collector-emitter voltage V
CE
( V )
60
40
20
Fig. 7 Response Time vs. Load Resistance
200
V
CE
= 2V
I
C
= 2mA
100 T
a
= 25˚C
50
Response time (
µ
s )
Fig. 8 Response Time vs. Base Resistance
(PT510 )
20
10
5
Response time (
µ
s )
V
CE
= 2V
I
C
= 2mA
T
a
= 25˚C
t
r
t
f
t
d
20
10
5
t
f
t
r
2
1
0.5
t
s
2
1
0.1
0.2
0.1
10
0.2
0.5
1
2
5
Load resistance R
L
( k
)
10
20
50
100 200
500 1000 2000
Base resistance R
BE
( k
)
5000 10000
PT501/PT510
Test Circuit for Response Time
Fig. 9 Sensitivity Diagram
- 20˚
- 10˚
100
Correspond to Fig. 7
V
CC
R
L
Output
Correspond to Fig. 8
V
CC
1k
Output
Input
Output
10%
90%
t
d
R
BE
(
PT501
has no base terminal. )
t
r
t
s
t
f
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
0
Angular displacement
θ
20
- 40˚
- 30˚
Relative sensitivity ( % )
80
+ 30˚
( T
a
= 25˚C)
+ 10˚
+ 20˚
60
+ 40˚
40
+ 50˚
+ 60˚
+ 70˚
+ 80˚
+ 90˚
Fig.10 Collector-emitter Saturation
Voltage vs. Irradiance
Collector-emitter saturation voltage V
CE ( sat )
( V )
0.8
I
C
= 0.1mA
0.5mA
1mA
2mA
T
a
= 25˚C
0.6
0.4
0.2
0
0
1
2
Irradiance E
e
( mW/cm
2
)
3
q
Please refer to the chapter “ Precautions for Use.”
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参数对比
与PT501A相近的元器件有:PT501、PT510。描述及对比如下:
型号 PT501A PT501 PT510
描述 PHOTO TRANS CLR LEN 800NM TO-18 phototransistors PT +- 6 deg 800nm 2.5-80ma PHOTO TRANS CLR LEN 800NM TO-18
电压 - 集射极击穿(最大值) 45V - 35V
电流 - 集电极(Ic)(最大值) 10mA - 20mA
电流 - 暗(Id)(最大值) 100nA - 100nA
波长 800nm - 800nm
视角 12° - 12°
功率 - 最大值 75mW - 75mW
安装类型 通孔 - 通孔
朝向 顶视图 - 顶视图
工作温度 -25°C ~ 125°C(TA) - -25°C ~ 125°C(TA)
封装/外壳 TO-18-2 金属罐 - TO-206AA,TO-18-3 金属罐
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