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PT7M6438CHC3EX

Power Supply Support Circuit, Fixed, 1 Channel, PDSO3, GREEN, SC-70, 3 PIN

器件类别:电源/电源管理    电源电路   

厂商名称:Pericom Semiconductor Corporation (Diodes Incorporated)

厂商官网:https://www.diodes.com/

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器件参数
参数名称
属性值
厂商名称
Pericom Semiconductor Corporation (Diodes Incorporated)
包装说明
TSSOP,
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
THRESHOLD VOLTAGE IS 3.8V
可调阈值
NO
模拟集成电路 - 其他类型
POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码
R-PDSO-G3
长度
2.1 mm
信道数量
1
功能数量
1
端子数量
3
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
座面最大高度
1.1 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.2 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
宽度
1.25 mm
文档预览
PT7M6418 -6450 CL/CH /NL
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Low Power Voltage Detector
Features
High accuracy:
2%
(25°
C)
Low power consumption: 0.6μA @ 3V Vcc
Detecting voltage range: 1.8 to 5V in 100mV
increments
Operating voltage range: 1.2V ~ 5.5V
Operating temperature range: -40° to + 85°
C
C
Detecting voltage accuracy over temperature:
TYP
Output configuration: N-channel open drain or CMOS
Reset timeout period at least 120ms
2.5%
Description
The PT7M64xx series are µ supervisory circuits with
P
a minimum reset timeout period of 120ms. Each circuit
includes a precise bandgap reference; a comparator, a
reset timeout circuit, internally trimmed resistor
networks that set specified trip thresholds, and an
internal 5% threshold hysteresis circuit (see the
Block
Diagram).
Output is asserted when V
CC
falls below the
internal V
TH-
and remains asserted until V
CC
rises above
V
TH+
(V
TH+
= V
TH-
×1.05)
after a reset timeout period.
These devices provide excellent circuit reliability and
low cost by eliminating external components and
adjustments when monitoring normal systems voltage
from +1.8V to +5V in 100mV increments. The series
are voltage detectors with a propagation delay of 35µ
s.
The family is available with four output stage options:
push-pull with active-low output, push-pull with active-
high output, open drain with active-low output and
bidirection port with active-low output and pushbutton
reset input. These devices specified over the -40° to
C
+85° temperature range.
C
Table 1. Function comparison
Reset Output
Item
1
2
3
Part No.
PT7M64xxCL
PT7M64xxCH
PT7M64xxNL
Open-Drain
Active high
Active low
-
-
-
-
-
Push-Pull
Active high Active low
-
-
-
-
Reset
bi-direction
-
-
-
Threshold
1.8V to 5.0V
in 100mV
increments
12-11-0002
1
PT0200-11
11/01/12
PT7M6418 -6450CL/CH /NL
Low Power Voltage Detector
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Pin Configuration
Pin Description
Name
RST
RST
GND
V
CC
Type
O
O
P
P
Description
Reset Output (PT7M64xxCL/NL/BL/NLL):
RST is asserted when V
CC
drops below voltage threshold V
TH-
:
Active low. For PT7M64xxBL, RST is also pushbutton reset input
Reset Output (PT7M64xxCH):
RST is asserted when V
CC
drops below voltage threshold V
TH-
: Active high.
Ground
Supply Voltage
12-11-0002
2
PT0200-11
11/01/12
PT7M6418 -6450CL/CH /NL
Low Power Voltage Detector
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Block Diagram
Block Diagram of PT7M64xxCL/CH
Vcc
-
+
RST / (RST)
(RST is for
64xxCH only)
GND
Reference
Voltage
1.25V
Block Diagram of PT7M64xxNL
VCC
-
+
RST
Reset
Timeout
GND
Reference
Voltage
1.25V
12-11-0002
3
PT0200-11
11/01/12
PT7M6418 -6450CL/CH /NL
Low Power Voltage Detector
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Maximum Ratings
Storage Temperature ............................................................-65
º
to +150
º
C
C
Ambient Temperature with Power Applied ..........................-40
º
to +85
º
C
C
Supply Voltage to Ground Potential (Vcc to GND) ..............-0.3V to +6.0V
DC Input Voltage (All inputs except Vcc and GND).......-0.3V to V
CC
+0.3V
DC Output Current (All outputs) .........................................................20mA
ESD(HBM) for 64xxNL/NLL......................................................1KV
ESD(HBM) for 64xxCL/CH/BL..................................................2KV
Power Dissipation ..............................................................................320mW
(Depend on package)
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure
to absolute maximum rating conditions for extended
periods may affect reliability.
DC Electrical Characteristics
(V
CC
= 1.2V to 5.5V, T
A
= -40~85º unless otherwise noted. Typical values are at T
A
= +25º
C,
C)
Description
Supply Voltage
Sym
V
CC
Test Conditions
Min
1.0
Typ
-
Max
5.5
V
Unit
T
A
= 0~70º
C
T
A
= -40~85º
C
V
CC
= 3V. No load.
Supply Current
I
CC
V
CC
= 5V. No load.
Output high
(Push-Pull
only)
Output
Driving
Output low
V
OL
1.2
-
-
-
0.6
0.9
-
-
-
-
-
-
-
5.5
1.2
2.0
-
-
-
0.3
0.3
0.4
1
(V
TH-
)
1.015
(V
TH-
)
1.025
(V
TH+
)
1.015
(V
TH+
)
1.025
A
V
V
µA
µA
V
CC
≥ 1.8V, I
source
= 1mA
V
OH
0.8×
Vcc
0.8×
Vcc
0.8×
Vcc
-
-
-
-
(V
TH-
)
0.985
(V
TH-
)
0.975
(V
TH+
)
0.985
(V
TH+
)
0.975
V
CC
≥ 2.5V, I
source
= 3mA
V
CC
≥ 4.5V, I
source
= 8mA
V
CC
≥ 1.2V, I
sink
= 1mA
V
CC
≥ 2.5V, I
sink
= 4mA
V
CC
≥ 4.5V, I
sink
= 9mA
Open-Drain Output Leakage
Current
I
LKG
-
+25C
V
TH-
V
TH-
V
TH+
V
TH-
-40C~85C
Voltage Threshold*
+25C
V
TH+
-40C~85C
Voltage threshold Hysteresis
Pushbutton Detect
Internal Pull-Up Resistor
V
HYST
P
BDV
R
P
V
HYST
= [(V
TH+
)-(V
TH-
)]/(V
TH-
)
100%
-40C~85C, Vcc = 5V
-
V
V
TH+
4.5
-
5
3
0.7
3.75
6
1.2
6.25
%
V
k
*
V
TH+
= 1.05
V
TH-.
V
TH-
is VCC dropping from high to low voltage. V
TH+
is V
CC
rising from low to high voltage.
12-11-0002
4
PT0200-11
11/01/12
PT7M6418 -6450CL/CH /NL
Low Power Voltage Detector
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AC Electrical Characteristics
Timing Diagram
V
CC
V
TH+
V
TH-
t
RP
RST
t
P
t
RP
RST
(PT7M64xxCH)
V
TH+
= 1.05 x V
TH-
t
P
(V
CC
= 1.2V to 5.5V, T
A
= -40~85º unless otherwise noted. Typical values are at T
A
= +25º
C,
C)
Sym
t
RP
t
P
Description
Timeout Period
Delay
Test Conditions
T
A
= +25º
C
-
Min
120
-
Typ
260
35
Max
430
-
Unit
ms
s
Typical Operation Circuit
PT7M64xxNL Application Example
V
CC1
PT7M64xxNL
Vcc1/Vcc2
RL
RST
GND
Vcc
RESET
For typical application, R
L
could be 100kR
IN
less than 10k and that C more than 0.1F.
12-11-0002
5
PT0200-11
11/01/12
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