1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor
PT91-21C/TR10
Features
․Fast
response time
․High
photo sensitivity
․Small
junction capacitance
․Compatible
with infrared and vapor phase reflow solder process.
․Pb
free
․RoHS
Compliance
․The
product itself will remain within RoHS compliant version.
․Compliance
with EU REACH.
․Compliance
Halogen Free .(Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)
Description
․PT91-21C/TR10
is a phototransistor in miniature SMD package which is molded in water
clear plastic with spherical top view lens.
․The
device is spectrally matched to infrared emitting diode.
Applications
․Miniature
switch
․Counters
and sorter
․Position
sensor
․Infrared
applied system
Device Selection Guide
Device No.
PT91-21C/TR10
Chip Material
Silicon
Lens Color
Water clear
1
Copyright © 2013, Everlight All Rights Reserved. Release Date : 24-Nove-2016. Issue No:DPT-0000503
Rev:4
www.everlightamericas.com
DATASHEET
1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor
PT91-21C/TR10
Package Dimensions
Collector
Emitter
Notes
:
1.All dimensions are in millimeters
Notes
:
2.Tolerances unless dimensions ±0.1mm
2
Copyright © 2013, Everlight All Rights Reserved. Release Date : 24-Nove-2016. Issue No:DPT-0000503
Rev:4
www.everlightamericas.com
DATASHEET
1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor
PT91-21C/TR10
Absolute Maximum Ratings (Ta=25
℃
)
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature *1
Power Dissipation at (or below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
P
c
Rating
30
5
20
-25 ~ +85
-40 ~ +100
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes
:
*1:Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang of Spectral Bandwidth
Wavelength of Peak Sensitivity
Collector Emitter Breakdown Voltage
Emitter Collector Breakdown Voltage
Collecto Emitter Saturation Voltage
Collector Dark Current
On State Collector Current
Rise Time
Fall Time
Symbol Min.
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
I
CEO
I
C(ON)
t
r
t
f
400
---
30
5
---
---
1.0
---
---
Typ. Max. Units
---
940
---
---
---
---
1.5
15
15
1100
---
---
---
0.4
100
---
---
---
nm
nm
V
V
V
nA
mA
Condition
---
---
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1m W/cm
2
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW /cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
μS
Intensity Specifications for Bin Grading
Test
Rank
Min
Condition
Bin1
Bin2
Bin3
Bin4
Bin5
3
Ee=1mW/cm
2
V
CE
=5V
1.0
1.5
2.0
2.5
3.0
Max
2.0
3.0
4.0
5.0
6.0
Units
mA
Copyright © 2013, Everlight All Rights Reserved. Release Date : 24-Nove-2016. Issue No:DPT-0000503
Rev:4
www.everlightamericas.com
DATASHEET
1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor
PT91-21C/TR10
Typical Electrical/Optical/Characteristics Curves
Fig.1 Collector Power Dissipation vs.
Ambient Temperature
100
80
60
40
20
0
Fig.2 Spectral Sensitivity
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
-25
0
25
50
75 85 100
100 300 500 700 900 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
10
C
1
0.1
0.01
0.001
0.01
0.1
1
2
10
4
Copyright © 2013, Everlight All Rights Reserved. Release Date : 24-Nove-2016. Issue No:DPT-0000503
Rev:4
www.everlightamericas.com
DATASHEET
1.9mm Round Subminiature“ Z-Bend” Lead Phototransistor
PT91-21C/TR10
Typical Electro-Optical Characteristics Curves
Fig.5
Collector Dark Current vs.
Ambient Temperature
Fig.6
Collector Current vs.
.Collector-Emitter
Voltage
10
14
12
10
10
10
8
6
10
10
0
25
50
75
100
4
2
0
0
1
2
3
4
5
Copyright © 2013, Everlight All Rights Reserved. Release Date : 24-Nove-2016. Issue No:DPT-0000503
Rev:4
www.everlightamericas.com
