PTF210451
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched
GOLDMOS
FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Features
•
•
Internal matching for wideband performance
Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
Two–Carrier WCDMA Drive-Up
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
Efficiency
30
25
20
ACPR
-45
-50
-55
30
32
34
36
38
40
42
IM3
15
10
5
•
IM3 (dBc), ACPR (dBc)
Drain Efficiency (%)
-35
-40
•
•
•
•
Average Output Power (dBm)
PTF210451E
Package 30265
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
RF Performance
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 11.5 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
η
D
Min
—
—
—
Typ
–37
14
27
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
η
D
IMD
Min
13
35
—
Typ
14
38
–32
Max
—
—
–30
Units
dB
%
dBc
2003-12-22
PTF210451
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 500 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.2
3.2
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 45 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
175
1.0
–40 to +150
1.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance
(data taken in production test fixture)
Broadband Performance
V
DD
= 28 V, I
DQ
= 500 mA, P
OUT
= 40 dBm
30
0
Efficiency
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 500 mA, f = 2170 MHz
17
Efficiency
16
60
50
40
Gain
14
13
12
34
36
38
40
42
44
46
48
30
20
10
Gain (dB), Efficiency (%)
Input Return Loss (dB)
Gain (dB)
20
15
10
5
0
2070
Gain
-10
-15
-20
-25
-30
2210
15
Input Retrun Loss
2105
2140
2175
Frequency (MHz)
Output Power (dBm)
Data Sheet
2
2003-12-22
Drain Efficiency (%)
25
-5
PTF210451
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V
DD
= 28 V, f = 2140 MHz, tone spacing = 1 MHz
-30
-35
0.40 A
-40
-25
-30
-35
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz,
P
OUT
= 45 W PEP
3rd Order
IMD (dBc)
IMD (dBc)
0.60 A
-45
-50
-55
-60
34
36
38
40
42
44
46
48
0.45 A
-40
-45
-50
5th Order
7th Order
0.50 A
0.55 A
-55
-60
0
10
20
30
40
Output Power, PEP (dBm)
Tone Spacing (MHz)
Two–Tone Drive–Up
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz,
tone spacing = 1MHz
-25
-30
-35
Efficiency
45
40
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, Test Model 1 w/16 DPCH, 67% clipping,
P/A R = 8.7 dB, 3.84 MHz BW
-35
Efficiency
30
25
20
15
ACPR Up
ACPR Low
-60
30
32
34
36
38
40
42
5
10
Drain Efficiency (%)
IMD (dBc)
ACPR (dB)
-40
-45
-50
-55
-60
-65
34
36
38
40
42
44
46
48
IM5
IM7
IM3
30
25
20
15
10
5
-45
-50
-55
Peak Output Power (dBm)
Avgerage Output Power (dBm)
Data Sheet
3
2003-12-22
Drain Efficiency (%)
35
-40
PTF210451
Typical Performance
(cont.)
IM3, Gain & Drain Efficiency vs. Supply Voltage
I
DQ
= 500 mA, f = 2140 MHz, P
OUT
= 44.75 dBm (PEP),
Tone Spacing = 1 MHz
0
-5
Efficiency
50
40
35
30
IM3 Up
Gain
25
20
15
10
5
0
23
24 25
26 27
28 29
30 31
32 33
1.03
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Gain (dB), Drain Efficiency (%)
4.50 A
3.75 A
1.01
1.00
0.99
0.98
0.97
0.96
-20
3.00 A
2.25 A
1.50 A
0.75 A
-10
-15
-20
-25
-30
-35
-40
-45
Normalized Bias Voltage
45
1.02
3rd Order IMD (dBc)
5
30
55
80
105
Supply Voltage (V)
Case Temperature (ºC)
Broadband Circuit Impedance Data
-
W
AV
E
LE
NGT
H
S T
OW
A RD
GE
N
ER
Z
0
= 50
Ω
0.1
D
Z Source
Z Load
0
.0
0.1
0.2
S
Frequency
MHz
2070
2110
2140
2170
2210
R
jX
-9.36
-8.97
-8.52
-8.16
-7.79
R
4.94
4.90
4.96
4.96
4.88
jX
-0.87
-0.69
-0.60
-0.49
-0.39
EL
E
W
AV
Z Source
Ω
5.72
5.17
4.88
4.59
4.08
Z Load
Ω
D
LOA
D
-
S
T
OW
AR
NGT
H
G
2210 MHz
2070 MHz
0.1
Z Source
2210 MHz
2070 MHz
0.
2
<---
0. 3
Data Sheet
4
2003-12-22
0.3
Z Load
PTF210451
Test Circuit
210451E SCHEMATIC DWG FOR DATA SHEET.dwg
Test Circuit Schematic for 2170 MHz
Circuit Assembly Information
DUT
PTF210451E
Circuit Board
0.79 mm. [.031”] thick,
ε
r
= 4.5
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
Electrical Characteristics at 2170 MHz
0.047
λ,
45
Ω
0.040
λ,
23
Ω
0.132
λ,
66
Ω
0.028
λ,
45
Ω
0.018
λ,
12
Ω
0.074
λ,
7
Ω
0.152
λ,
9
Ω
0.257
λ,
68
Ω
0.027
λ,
44
Ω
0.056
λ,
56
Ω
0.036
λ,
19
Ω
0.076
λ,
44
Ω
LDMOS Transistor
Rogers TMM4, 2 oz. copper
Dimensions: L x W (mm.)
3.48 x 1.78
2.87 x 4.57
10.08 x 0.89
2.08 x 1.78
26.67 x 10.06
4.98 x 17.68
10.34 x 13.56
19.76 x 0.84
1.98 x 1.83
4.22 x 1.22
2.57 x 5.74
5.64 x 1.80
Dimensions: L x W (in.)
0.137 x 0.070
0.113 x 0.180
0.397 x 0.035
0.082 x 0.070
1.050 x 0.396
0.196 x 0.696
0.407 x 0.534
0.778 x 0.033
0.078 x 0.072
0.166 x 0.048
0.101 x 0.226
0.222 x 0.071
Data Sheet
5
2003-12-22
