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PUMA2SV16000BM-020

SRAM Module, 512KX32, 20ns, CMOS, CHMA66, CERAMIC, PGA-66

器件类别:存储    存储   

厂商名称:APTA Group Inc

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器件参数
参数名称
属性值
厂商名称
APTA Group Inc
零件包装代码
PGA
包装说明
,
针数
66
Reach Compliance Code
unknown
ECCN代码
3A001.A.2.C
最长访问时间
20 ns
其他特性
CONFIGURABLE AS 2M X 8
备用内存宽度
16
JESD-30 代码
S-CHMA-P66
内存密度
16777216 bit
内存集成电路类型
SRAM MODULE
内存宽度
32
功能数量
1
端子数量
66
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
125 °C
最低工作温度
-55 °C
组织
512KX32
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
SQUARE
封装形式
MICROELECTRONIC ASSEMBLY
并行/串行
PARALLEL
认证状态
Not Qualified
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子形式
PIN/PEG
端子位置
HEX
文档预览
512K x 32 SRAM MODULE
PUMA 2/77SV16000/A - 020/025/35
Issue 1.1 : April 2001
Description
16,777,216 bit CMOS High Speed Static RAM
Available in PGA (PUMA 2 ) and Gullwing (PUMA 77)
Features
footprints, the PUMA **SV16000 is a 3.3V 16 MBit • 16MBit Fast SRAM Module.
SRAM module user configurable as 512K x 32, 1M x 16 • Fast Access times of 20/25/35ns.
or 2M x 8. The device is available with fast access times
• Configurable as 8 / 16 / 32 bit wide output.
of 20, 25 and 30ns. The device may be screened in
• Operating Power 1330 / 1800 / 2850 mW (max).
accordance with MIL-STD-883.
Standby CMOS 795mW (max).
• Single 3.3V±10% Power supply.
• TTL compatible inputs and outputs.
• May be screened in accordance with MIL-STD-883.
• PUMA 2 - 66 pin ceramic PGA
• PUMA77 - 68 pin ceramic Gullwing
Block Diagram
PUMA 2SV16000 , 77SV16000A,77SV16000B
A0~A18
OE
WE4
WE3
WE2
WE1
512K x 8
SRAM
CS1
CS2
CS3
CS4
D0~7
D8~15
D16~23
D24~31
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
Block Diagram
PUMA 77SV16000
A0~A18
OE
WE
512K x 8
SRAM
CS1
CS2
CS3
CS4
D0~7
D8~15
D16~23
D24~31
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
Pin Functions
A0~A18
CS1~4
WE1~4
V
CC
Address Inputs
Chip Select
Write Enable
Power (+5V)
D0~D31
OE
NC
GND
Data Inputs/Outputs
Output Enable
No Connect
Ground
PUMA 2/77SV16000 - 020/025/35
Issue 1.1 : April 2001
DC OPERATING CONDITIONS
Absolute Maximum Ratings
(1)
Voltage on any pin relative to V
ss (2)
Power Dissipation
Storage Temperature
Notes
V
T
-0.5V to +4.6
P
D
4
T
STG
-55 to +150
V
W
°
C
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
min
Supply Voltage
V
CC
3.0
Input High Voltage
V
IH
2.0
Input Low Voltage
V
IL
-0.3
Operating Temperature
T
A
0
T
AI
-40
T
AM
-55
typ
3.3
-
-
-
-
-
max
3.6
V
CC
+0.3
0.8
70
85
125
units
V
V
V
°
C
°
C (Suffix
I)
°
C (Suffix
M, MB)
DC Electrical Characteristics
(V
CC
=3.3V±10%,T
A
=-55°C to +125°C)
Parameter
Symbol Test Condition
I
LI1
I
LI2
I
LO
I
CC32
I
CC16
I
CC8
I
SB
V
OL
V
OH
V
IN
= 0V to V
CC
V
IN
= 0V to V
CC
CS
(2)
= V
IH
or OE = V
IH
, V
I/O
= 0V to V
CC
WE
(2)
= V
IL
CS
(2)
=
V
IL
, Minumum cycle, I
I/O
= 0mA
WE
(2)
=V
IL
or WE
(2)
=OE=V
IH
, 100% duty.
As above
As above
CS
(2)
= V
IH ,
V
CC
=5.5V
I
OL
= 8.0 mA
I
OH
= -4.0 mA
min
-8
-2
-8
typ
(1)
-
-
-
max Unit
8
2
8
µA
µA
µA
Input Leakage Current Address,OE
WE, CS
Output Leakage Current
Average Supply Current
32 bit
16 bit
8 bit
Standby Supply Current
Output Voltage Low
Output Voltage High
TTL levels
-
-
-
-
-
2.4
-
-
-
-
-
-
790
500
370
240
0.4
-
mA
mA
mA
mA
V
V
Notes: (1) Typical values are at V
CC
=3.3V,T
A
=25
°
C and specified loading.
(2) CS and WE above are accessed through CS1~4 and WE1~4 respectively. These inputs must be operated
simultaneously for 32 bit mode, in pairs for 16 bit mode and singly for 8 bit mode.
2
PUMA 2/77SV16000 - 020/025/35
Issue 1.1 : April 2001
Capacitance
(V
CC
=3.3V±10%,T
A
=25°C)
Note: These parameters are calculated and not measured.
Parameter
Input Capacitance Address, OE
WE1~4, CS1~4
I/O Capacitance
D0~31
Symbol
C
IN1
C
IN2
C
I/O
Test Condition
V
IN
=0V
V
IN
=0V
V
I/O
=0V
typ
-
-
-
max
34
6
42
Unit
pF
pF
pF (8 bit mode)
Operating Modes
The Table below shows the logic inputs required to control the operating modes of each of the SRAMs on the
device.
Mode
Not Selected
Output Disable
Read
Write
1 = V
IH
,
0 = V
IL
,
X = Don't Care
CS
1
0
0
0
OE
X
1
0
X
WE
X
1
1
0
V
CC
Current
I
SB1
,I
SB2
I
CC
I
CC
I
CC
I/O Pin
High Z
High Z
D
OUT
D
IN
Reference Cycle
Power Down
Read cycle
Write Cycle
Note: CS above is accessed through CS1~4 and WE is accessed through WE1~4. For correct operation, CS1~ 4 and
WE1~4 must operate simultaneously for 32 bit operation, in pairs for 16 bit operation, or singly for 8 bit operation.
AC Test Conditions
*Input pulse levels: 0.0V to 3.0V
*Input rise and fall times: 3 ns
*Input and Output timing reference levels: 1.5V
*V
cc
=3.3V±10%
*PUMA module is tested in 32 bit mode.
Output Load
I/O Pin
166
1.76V
30pF
3
PUMA 2/77SV16000 - 020/025/35
Issue 1.1 : April 2001
AC OPERATING CONDITIONS
Read Cycle
Parameter
Symbol
t
RC
t
AA
t
ACS
t
OE
t
OH
t
CLZ
t
OLZ
t
CHZ
t
OHZ
020
min max
20
-
-
-
5
5
5
-
0
-
20
20
10
-
-
-
10
10
025
min max
25
-
-
-
5
5
0
0
0
-
25
25
15
-
-
-
10
10
35
min max
35
-
-
-
5
5
0
0
0
-
35
35
15
-
-
-
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Hold from Address Change
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
(3)
Output Disable to Output in High Z
(3)
Write Cycle
Parameter
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
020
Symbol min max
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
20
15
15
0
15
0
0
10
0
5
-
-
-
-
-
10
-
-
-
025
min max
25
15
15
0
15
0
0
10
0
5
-
-
-
-
-
-
10
-
-
-
35
min max Unit
35
15
15
0
15
0
0
10
0
5
-
-
-
-
-
-
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
PUMA 2/77SV16000 - 020/025/35
Issue 1.1 : April 2001
Read Cycle Timing Waveform
(1,2)
t
Address
RC
t
AA
OE
t
OE
t
OLZ
CS1~4
t
OH
t
CLZ
t
ACS
t
CHZ(3)
t
OHZ(3)
High-Z
D0~31
Notes:
(1) During the Read Cycle, WE is high for the module.
(2) Address valid prior to or coincident with CS transition Low.
Data Valid
(3) t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels. These parameters are sampled and not 100% tested.
Write Cycle No.1 Timing Waveform
t
WC
A0~A18
OE
t
AS(3)
t
AW
t
CW(4)
(6)
t
WR
(2)
CS1~4
t
WP(1)
WE1~4
t
OHZ(3,9)
High-Z
t
DW
High-Z
t
OW
t
DH
D0~31out
D0~31in
5
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